HTF8A60 Shantou Huashan Electronic Devices Co.,Ltd. INSULATED TYPE TRIAC (TO-220F PACKAGE) █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-state Current(IT(RMS)=8A) * High Commutation dv/dt TO-220F █ General Description The Triac HTF8A60 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. 1 2 3 █ Absolute Maximum Ratings（Ta=25℃） Tstg ——Storage Temperature……………………………………………………………… -40~125℃ Tj ——Operating Junction Temperature …………………………………………………… -40~125℃ PGM——Peak Gate Power Dissipation………………………………………………………………… 5W VDRM——Repetitive Peak Off-State Voltage………………………………………………………… 600V IT（RMS）——R.M.S On-State Current（Ta=89℃）………………………………………………… 8A V G M ——Peak Gate Voltage………………………………………………………………… 10V IGM——Peak Gate Current…………………………………………………………… 2.0A ITSM——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)…………………… 80/88A VISO——Isolation Breakdown Voltage （RMS.A.C.1 minute）………………………………… 1500V █ Electrical Characteristics（Ta=25℃） Symbol Items Min. Typ. Max. Unit Conditions IDRM Repetitive Peak Off-State Current 2.0 mA VTM Peak On-State Voltage 1.4 V VD=VDRM, Single Phase,Half Wave, TJ=125℃ IT=12A, Inst. Measurement I+GT1 Gate Trigger Current（Ⅰ） 30 mA VD=6V, RL=10 ohm I- GT1 Gate Trigger Current（Ⅱ） 30 mA VD=6V, RL=10 ohm I-GT3 Gate Trigger Current（Ⅲ） 30 mA VD=6V, RL=10 ohm V+ GT1 Gate Trigger Voltage（Ⅰ） 1.5 V VD=6V, RL=10 ohm V- GT1 Gate Trigger Voltage（Ⅱ） 1.5 V VD=6V, RL=10 ohm V- GT3 Gate Trigger Voltage（Ⅲ） 1.5 V VD=6V, RL=10 ohm 0.2 V 10 V/µS TJ=125℃,VD=1/2VDRM TJ=125℃,VD=2/3VDRM (di/dt)c=-4A/ms VGD (dv/dt)c IH Rth(j-c) Non-Trigger Gate Voltage Critical Rate of Rise of Off-State Voltage at Commutation Holding Current Thermal Resistance 15 mA 3.7 ℃/W Junction to case HTP8A60 Shantou Huashan Electronic Devices Co.,Ltd. █ Performance Curves 10 1 0.1 On-State Voltage On-state Current [A] Fig 2. Gate Voltage (V) Fig 1. Gate Characteristics 101 102 Gate Current 103 (mA) On-State Voltage [V] Fig 3. Gate Trigger Voltage vs. Junction Fig 4. On State Current vs. Maximum Power Dissipation Power Dissipation [W] Temperature Junction Temperature [℃] RMS On-State Current [A] Fig 5. On State Current vs. Fig 6. Surge On-State Current Rating ( Non-Repetitive ) Surge On-state Current [A] Allowable Case Temp. [°C] Allowable Case Temperature 100 RMS On-State Current [A] 101 Time（Cycles） 102 HTP8A60 Shantou Huashan Electronic Devices Co.,Ltd. Fig 7. Gate Trigger Current vs. Fig 8. Transient Thermal Impedance Impedance [℃/W ] Transient Thermal Junction Temperature Junction Temperature [℃] Time（sec） Fig 9. Gate Trigger Characteristics Test Circuit 10Ω Test ProcedureⅠ 10Ω Test ProcedureⅡ 10Ω Test ProcedureⅢ