NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HX3199 █ APPLICATIONS Small power amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92S T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………200mW 1―Emitter，E 2―Collector，C 3―Base，B VCBO——Collector-Base Voltage………………………………50V VCEO——Collector-Emitter Voltage……………………………50V V EB O ——Emitter-Base Voltage………………………………5V I C ——Collector Current……………………………………150mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 50 V IC=10μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage 50 V IC=100μA, IB=0 ICBO Collector Cut-off Current 0.1 μA VCB=50V, IE=0 IEBO Emitter Cut-off Current 0.1 μA VEB=5V, IC=0 HFE DC Current Gain VCE(sat) 70 Collector- Emitter Saturation Voltage VCE=6V, IC=2mA 700 0.1 0.25 V fT Cob Current Gain-Bandwidth Product Output Capacitance 2.0 3.5 MHz pF NF Noise Figure 1.0 10 dB 80 IC=100mA, IB=10mA VCE=6V, IC=10mA VCB=10V, IE=0，f=1MHz VCE=6V, IC=100μA f=1KHz,Rg=10KΩ █ hFE Classification O 70—140 Y GR 120—240 200—400 BL 350—700