3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module HYS64V4120GU-10 HYS72V4120GU-10 168 pin unbuffered DIMM Modules • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module for PC main memory applications • 2 bank 4M x 64, 4M x 72 organisation • Optimized for byte-write non-parity or ECC applications • Fully PC66 layout compatible • JEDEC standard Synchronous DRAMs (SDRAM) • Performance: -10 fCK Max. Clock frequency tAC Max. access time from clock 66 MHz @ CL=2 100 MHz @ CL=3 9 ns @ CL=2 8 ns @ CL=3 • Single +3.3V(± 0.3V ) power supply • Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave) • Auto Refresh (CBR) and Self Refresh • Decoupling capacitors mounted on substrate • All inputs, outputs are LVTTL compatible • Serial Presence Detect with E 2PROM • Utilizes 16 / 18 2M x 8 SDRAMs in TSOPII-44 packages • 4096 refresh cycles every 64 ms • Gold contact pad • Card Size: 133,35 mm x 29.21 mm x 4,00 mm for HYS64(72)V4120GU Semiconductor Group 1 2.98 HYS64(72)V4120GU-10 4M x 64/72 SDRAM-Module The HYS64(72)V4120GU-10 are industry standard 168-pin 8-byte Dual in-line Memory Modules (DIMMs) which are organised as 4M x 64 and 4M x 72 in two banks high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use 16 2M x 8 SDRAMs for the 4M x 64 organisation and additional two SDRAMs for the 4M x 72 organisation. Decoupling capacitors are mounted on the PC board. The DIMMs have a serial presence detect, implemented with a serial E 2PROM using the two pin I 2C protocol. The first 128 bytes are utilized by the DIMM manufacturer and the second 128 bytes are available to the end user. All SIEMENS 168-pin DIMMs provide a high performance, flexible 8-byte interface in a 133,35 mm long footprint. This SDRAM module is available with a board-height of 1,15“. Ordering Information Type Package Descriptions Module Height HYS 64V4120GU-10 L-DIM-168-25 PC66 4M x 64 2 bank SDRAM module 1,15“ HYS 72V4120GU-10 L-DIM-168-25 PC66 4M x 72 2 bank SDRAM module 1,15“ Pin Names A0-A10 BS (A11) DQ0 - DQ63 CB0-CB7 RAS CAS WE CKE0, CKE1 CLK0 - CLK3 DQMB0 - DQMB7 CS0 - CS3 Vcc Vss SCL SDA N.C. Address Inputs( RA0 ~ RA10 / CA0 ~ CA8) Bank Select Data Input/Output Check Bits (x72 organisation only) Row Address Strobe Column Address Strobe Read / Write Input Clock Enable Clock Input Data Mask Chip Select Power (+3.3 Volt) Ground Clock for Presence Detect Serial Data Out for Presence Detect No Connection Address Format: 4M x 64 4M x 72 Part Number HYS 64V4120GU HYS 72V4120GU Semiconductor Group Rows 11 11 Columns 9 9 2 Bank Select 1 1 Refresh 4k 4k Period 64 ms 64 ms Interval 15,6 µs 15,6 µs HYS64(72)V4120GU-10 4M x 64/72 SDRAM-Module Pin Configuration PIN # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 Symbol VSS DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 VCC DQ14 DQ15 NC (CB0) NC (CB1) VSS NC NC VCC WE DQMB0 DQMB1 CS0 DU VSS A0 A2 A4 A6 A8 A10 NC VCC VCC CLK0 PIN # 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 Symbol PIN # VSS DU CS2 DQMB2 DQMB3 DU VCC NC NC NC (CB2) NC (CB3) VSS DQ16 DQ17 DQ18 DQ19 VCC DQ20 NC DU CKE1 VSS DQ21 DQ22 DQ23 VSS DQ24 DQ25 DQ26 DQ27 VCC DQ28 DQ29 DQ30 DQ31 VSS CLK2 NC NC SDA SCL VCC 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 Note : Pinnames in brackets are for the x72 ECC versions Semiconductor Group 3 Symbol VSS DQ32 DQ33 DQ34 DQ35 VCC DQ36 DQ37 DQ38 DQ39 DQ40 VSS DQ41 DQ42 DQ43 DQ44 DQ45 VCC DQ46 DQ47 NC (CB4) NC (CB5) VSS NC NC VCC CAS DQMB4 DQMB5 CS1 RAS VSS A1 A3 A5 A7 A9 A11=BS NC VCC CLK1 NC PIN # 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 Symbol VSS CKE0 CS3 DQMB6 DQMB7 NC VCC NC NC CB6 CB7 VSS DQ48 DQ49 DQ50 DQ51 VCC DQ52 NC DU NC VSS DQ53 DQ54 DQ55 VSS DQ56 DQ57 DQ58 DQ59 VCC DQ60 DQ61 DQ62 DQ63 VSS CLK3 NC SA0 SA1 SA2 VCC HYS64(72)V4120GU-10 4M x 64/72 SDRAM-Module CS1 CS0 CS CS CS CS DQMB0 DQM DQM DQMB4 DQM DQM DQ0-DQ7 DQ0-DQ7 D0 DQ0-DQ7 D8 DQ32-DQ39 DQ0-DQ7 D4 DQ0-DQ7 D12 DQMB1 DQM DQMB5 DQM DQM DQ8-DQ15 DQ0-DQ7 DQ0-DQ7 D1 D9 DQ40-DQ47 DQ0-DQ7 D5 DQ0-DQ7 D13 CS CS CS CS DQM DQ0-DQ7 D16 DQ0-DQ7 D17 DQM CB0-CB7 CS DQM CS CS3 CS2 CS CS CS CS DQMB2 DQM DQM DQMB6 DQM DQM DQ16-DQ23 DQ0-DQ7 D2 DQ0-DQ7 D10 DQ48-DQ55 DQ0-DQ7 D6 DQ0-DQ7 D14 DQMB3 DQM DQM DQMB7 DQM DQM DQ24-DQ31 DQ0-DQ7 D3 DQ0-DQ7 D11 DQ56-DQ63 DQ0-DQ7 D7 DQ0-DQ7 D15 CS CS CS CS E2PROM (256wordx8bit) D0 - D15,(D16,D17) A0-A10,BS VDD VSS D0 - D15,(D16,D17) SA0 SA1 SA2 SA0 SA1 SA2 C1-C15,(C16,C17) SCL SDA D0 - D7,(D8) RAS, CAS, WE CKE0 D0 - D15,(D16,D17) D0 - D7,(D16) CLK0 2 SDRAMs CLK1 2 SDRAMs 2 (3) SDRAMs 2 SDRAMs CLK2 2 SDRAMs CLK3 2 SDRAMs 2 (3) SDRAMs 2 SDRAMs VDD 10k CKE1 D9 - D15,(D17) Note: D16 & D17 is only used in the x72 ECC version and all resistor values are 10 Ohms except otherwise noted. Block Diagram for 4M x 64/72 SDRAM DIMM modules (HYS64/72V4120GU) Semiconductor Group 4 HYS64(72)V4120GU-10 4M x 64/72 SDRAM-Module DC Characteristics TA = 0 to 70 °C; VSS = 0 V; VDD,VDDQ = 3.3 V ± 0.3 V Parameter Symbol Limit Values Unit min. max. Input high voltage VIH 2.0 Vcc+0.3 V Input low voltage VIL – 0.5 0.8 V Output high voltage ( IOUT = – 2.0 mA) VOH 2.4 – V Output low voltage ( IOUT = 2.0 mA) VOL – 0.4 V Input leakage current, any input (0 V < VIN < 3.6 V, all other inputs = 0 V) II(L) – 40 40 µA Output leakage current (DQ is disabled, 0 V < VOUT < VCC) IO(L) – 40 40 µA Capacitance TA = 0 to 70 °C; VDD = 3.3 V ± 0.3 V, f = 1 MHz Parameter Symbol Limit Values max. (x64) max. (x72) Unit Input capacitance (A0 to A11, RAS, CAS, WE) CI1 80 90 pF Input capacitance (CS0 -CS3, ) CI2 30 35 pF Input capacitance ( CLK0 - CLK3) CICL 38 38 pF Input capacitance (CKE0, CKE1) CI3 50 55 pF Input capacitance (DQMB0 - DQMB7) CI4 15 20 pF Input / Output capacitance (DQ0-DQ63,CB0-CB7) CIO 20 20 pF Input Capacitance (SCL,SA0-2) Csc 8 8 pF Input/Output Capacitance Csd 10 10 pF Semiconductor Group 5 HYS64(72)V4120GU-10 4M x 64/72 SDRAM-Module Standby and Refresh Currents (Ta = 0 to 70 oC, VCC = 3.3V ± 0.3V) 1) Parameter Symbol Test Condition Note X64 X72 800 900 mA CKE<=VIL(max), tck>=tck(min.) 24 27 mA CKE<=VIL(max), tck=infinite 16 18 mA 160 180 mA CS= High CKE>=VIH(min), tck=infinite, no input change 80 90 mA CKE<=VIL(max), tck>=tck(min.) 24 27 mA CKE<=VIL(max), tck=infinite 16 18 mA CKE>=VIH(min), tck>=tck (min.) input changed one time 200 225 mA CS= High Icc3NS CKE=>VIH(min),tck=infinite, no input change 120 135 mA Burst Operating Current Icc4 Burst length = full page, trc = infinite, CL = 3, tck>=tck (min.), Io = 0 mA 2 banks activated 760 855 mA 1,2 Auto (CBR) Refresh Current Icc5 trc>=trc(min) 720 810 mA 1,2 Self Refresh Current Icc6 CKE=<0,2V 16 18 mA 1,2 Operating Current Precharged Standby Current in Power Down Mode Precharged Standby Current in Nonpower Down Mode Active Standby Current in Power Down Mode Active Standby Current in Nonpower Down Mode Semiconductor Group Icc1 Icc2P Icc2PS Icc2N Icc2NS Icc3P Icc3PS Icc3N Burst length = 4, CL=3 trc>=trc(min.), tck>=tck(min.), Io=0 mA 2 bank interleave operation CKE>=VIH(min), tck>=tck (min.), input changed once in 3 cycles 6 1,2 HYS64(72)V4120GU-10 4M x 64/72 SDRAM-Module AC Characteristics 3)4) TA = 0 to 70 °C; VSS = 0 V; VCC = 3.3 V ± 0.3 V, tT = 1 ns Parameter Limit Values Symbol Unit Note -10 min max Clock and Clock Enable tCK Clock Cycle Time CAS Latency = 3 CAS Latency = 2 CAS Latency = 1 10 15 30 ns ns ns fCK System Frequency CAS Latency = 3 CAS Latency = 2 CAS Latency = 1 – – – 100 66 33 MHz MHz MHz – – – 8 9 27 ns ns ns tAC Clock Access Time CAS Latency = 3 CAS Latency = 2 CAS Latency = 1 5 Clock High Pulse Width tCH 3.5 – ns Clock Low Pulse Width tCL 3.5 – ns CKE Setup Time tCKS 3 – ns 6 CKE Hold Time tCKH 1 – ns 6 CKE Setup Time (Power down mode) tCKSP 3 – ns 6 CKE Setup Time (Self Refresh Exit) tCKSR 8 – ns 8 Transition time (rise and fall) tT 1 30 ns Command Setup time tCS 3 – ns 6 Command Hold Time tCH 1 – ns 6 Address Setup Time tAS 3 – ns 6 Address Hold Time tAH 1 – ns 6 RAS to CAS delay tRCD 30 – ns Cycle Time tRC 75 120k ns Active Command Period tRAS 45 120k ns Precharge Time tRP 30 – ns Bank to Bank Delay Time tRRD 20 – ns Common Parameters Semiconductor Group 7 HYS64(72)V4120GU-10 4M x 64/72 SDRAM-Module Parameter Limit Values Symbol Unit Note -10 min max tCCD 1 – CLK Self Refresh Exit Time tSREX 2Clk +tRC – ns 8 Refresh Period (4096 cycles) tREF – 64 ms 7 Data Out Hold Time tOH 3 – ns Data Out to Low Impedance Time tLZ 0 – ns CAS to CAS delay time (same bank) Refresh Cycle Read Cycle tHZ Data Out to High Impedance Time CAS Latency = 3 CAS Latency = 2 CAS Latency = 1 9 – – – 6 8 25 ns ns ns tDQZ 2 – CLK Data In Setup Time tDS 3 – ns Data In Hold Time tDH 1 – ns Data input to Precharge tDPL 2 – CLK Data In to Active/refresh tDAL 5 – CLK 10 DQM Write Mask Latency tDQW 0 – CLK DQM Data Out Disable Latency Write Cycle Semiconductor Group 8 HYS64(72)V4120GU-10 4M x 64/72 SDRAM-Module Notes: 1. The specified values are valid when addresses are changed no more than once during tck(min.) and when No Operation commands are registered on every rising clock edge during tRC(min). Values are shown per module bank. 2. The specified values are valid when data inputs (DQ’s) are stable during tRC(min.). 3. An initial pause of 100µs is required after power-up, then a Precharge All Banks command must be given followed by 8 Auto Refresh (CBR) cycles before the Mode Register Set Operation can begin. 4. AC timing tests have V il = 0.4 V and V ih = 2.4 V with the timing referenced to the 1.4 V crossover point. The transition time is measured between V ih and Vil. All AC measurements assume t T=1ns with the AC output load circuit shown. tCH 2.4 V CLOCK 0.4 V tCL tSETUP tT + 1.4 V tHOLD 50 Ohm 1.4V INPUT Z=50 Ohm I/O tAC tAC tLZ 50 pF tOH 1.4V OUTPUT fig.1 tHZ 5. If clock rising time is longer than 1ns, a time (t T/2 -0.5) ns has to be added to this parameter. 6. If tT is longen than 1 ns, a time (t T -1) nshas to be added to this parameter. 7. Any time that the refresh Period has been exceeded, a minimum of two Auto (CBR) Refresh commands must be given to “wake-up“the device. 8. Self Refresh Exit is a synchronous operation and begins on the 2nd positive clock edge after CKE returns high. Self Refresh Exit is not complete until a time period equal to tRC is satisfied once the Self Refresh Exit command is registered. 9. Referenced to the time which the output achieves the open circuit condition, not to output voltage levels. 10.tDAL is equivalent to t DPL + tRP. Semiconductor Group 9 HYS64(72)V4120GU-10 4M x 64/72 SDRAM-Module A serial presence detect storage device - E 2PROM - is assembled onto the module. Information about the module configuration, speed, etc. is written into the E 2PROM device during module production using a serial presence detect protocol ( I 2C synchronous 2-wire bus) PD-Table: Byte# Description SPD Entry Value 0 1 2 3 4 Number of SPD bytes Total bytes in Serial PD Memory Type Number of Row Addresses (without BS bits) Number of Column Addresses (for x8 SDRAM) Number of DIMM Banks Module Data Width Module Data Width (cont’d) Module Interface Levels SDRAM Cycle Time at CL=3 SDRAM Access Time from Clock at CL=3 Dimm Config (Error Det/Corr.) Refresh Rate/Type 128 256 SDRAM 11 9 5 6 7 8 9 10 11 12 13 14 15 16 17 18 SDRAM width, Primary Error Checking SDRAM data width Minimum clock delay for back-to-back random column address Burst Length supported Number of SDRAM banks Supported CAS Latencies 19 20 21 CS Latencies WE Latencies SDRAM DIMM module attributes 22 23 24 25 26 27 28 SDRAM Device Attributes :General SDRAM Cycle Time at CL = 2 SDRAM Access Time from Clock at CL = 2 SDRAM Cylce Time at CL = 1 SDRAM Access Time from Clock at CL = 1 Minimum Row Precharge Time Minimum Row Active to Row Active delay tRRD Semiconductor Group 10 Hex x64 x72 -10 -10 80 80 08 08 04 04 0B 0B 09 09 2 64 / 72 0 LVTTL 10.0 ns 8.0 ns none / ECC Self-Refresh, 15.6µs x8 n/a / x8 tccd = 1 CLK 02 40 00 01 A0 80 00 80 02 48 00 01 A0 80 02 80 08 00 01 08 08 01 1, 2, 4, 8 & full page 2 CAS latency = 1, 2 & 3 CS latency = 0 Write latency = 0 non buffered/non reg. Vcc tol +/- 10% 15.0 ns 9.0 ns 30 ns 27 ns 30 ns 20 ns 8F 02 07 8F 02 07 01 01 00 01 01 00 06 F0 90 78 6C 1E 14 06 F0 90 78 6C 1E 14 HYS64(72)V4120GU-10 4M x 64/72 SDRAM-Module SPD-Table (cont’d): Byte# Description SPD Entry Value 29 30 31 32-61 Minimum RAS to CAS delay tRCD Minimum Ras pulse width tRAS Module Bank Density (per bank) Superset information (may be used in future) 62 SPD Revision 63 Checksum for bytes 0 - 62 64- Manufactures’s information (optional) 127 (FFh if not used) 128+ Unused storage locations 30 ns 45 ns 16 MByte Revision 1 Hex x64 x72 -10 -10 1E 1E 2D 2D 04 04 FF FF 01 F4 FF 01 06 FF FF FF L-DIM-168-25 HYS64(72)V4120GU-10 SDRAM DIMM Module package 133,35 127,35 3,0 1 10 11 40 84 41 17,78 x) 29.21 4,0 42,18 66,68 A 85 C B 94 95 124 125 168 x) 6,35 6,35 2,0 Detail A 1,0 + - 0.5 2,54 min. 3,125 3,125 1,27 2,0 0,2 +- 0,15 Detail C Detail B DM168-25.WMF x) on ECC modules only Semiconductor Group 11