INFINEON HYS64V16220GDL-7.5-C2

144 pin SO-DIMM SDRAM Modules
HYS64V8200GDL
HYS64V16220GDL
64MB & 128 MB PC100 / PC133
•
144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules
for PC 100 and PC133 notebook applications
•
one bank 8M x 64 and two bank 16M x 64 non-parity module organisation
•
Performance:
-7
-7.5
-8
PC133
2-2-2
PC133
3-3-3
PC100
2-2-2
Units
fCK
Clock frequency (max.)
133
133
100
MHz
tAC
Clock access time
5.4
5.4
6
ns
•
Single +3.3V(± 0.3V ) power supply
•
Programmable CAS Latency, Burst Length and Wrap Sequence
(Sequential & Interleave)
•
Auto Refresh (CBR) and Self Refresh
•
Decoupling capacitors mounted on substrate
•
All inputs, outputs are LVTTL compatible
•
Serial Presence Detect with E2PROM
•
Uses 8M x 16 128Mbit SDRAM components
•
4096 refresh cycles every 64 ms
•
Gold contact pad, JEDEC MO-190 outline dimensions
•
This module family is fully compliant with the latest INTEL SO-DIMM layout and electrical
specification
•
All PC133 modules are fully backward compatible for PC100 applications.
INFINEON Technologies
1
9.01
HYS64V8200GDL/HYS64V16220GDL
144 pin SO-DIMM SDRAM Modules
These INFINEON modules are industry standard 144 pin 8-byte Synchronous DRAM (SDRAM)
Small Outline Dual In-line Memory Modules (SO-DIMM) which are organised as 8Mx64 (64MByte)
and 16x64 (128MByte) high speed memory arrays designed for use in non-parity applications.
These SO-DIMMs use SDRAMs in TSOPII packages. Decoupling capacitors are mounted on the
board.
The DIMMs use serial presence detects implemented via a serial E2PROM using the two pin I2C
protocol. The first 128 bytes are utilized by the DIMM manufacturer and the second 128 bytes are
available to the end user.
All INFINEON 144-pin SO-DIMMs provide a high performance, flexible 8-byte interface in a 67,6
mm long footprint.
Product Spectrum:
Organisation
8M x 64
16M x 64
Partnumber
Speed
SDRAMs
used
HYS64V8200GDL-7
HYS64V8200GDL-7.5
HYS64V8200GDL-8
HYS64V16220GDL-7
HYS64V16220GDL-7.5
HYS64V16220GDL-8
PC133-222
PC133-333
PC100-222
PC133-222
PC133-333
PC100-222
Row
Addr.
Bank
Select
12
BA0, BA1
Column Refresh
Addr.
Period
4 8Mx16
4k
9
64ms
8 8Mx16
Note: All partnumbers end with a place code (not shown), designating the die revision. Consult factory for current
revision. Example: HYS64V16220GDL-8-C2, indicating Rev.C2 dies are used for SDRAM components.
Card Dimensions:
Organisation
8M x 64
16M x 64
Partnumber
HYS64V8200GDL
HYS64V16220GDL
PCB-Board Layout
INTEL Rev. 1.0/1.2
INTEL Rev. 1.0/1.2
L x H x T [mm]
67.60 x 25.40 x 3.80
67.60 x 31.75 x 3.80
Pin Names
A0-A11
Address Inputs
DQMB0 - DQMB7
Data Mask
BA0,BA1
Bank Selects
CS0, CS1 *)
Chip Select
DQ0 - DQ63
Data Input/Output
Vcc
Power (+3.3 Volt)
RAS
Row Address Strobe
Vss
Ground
CAS
Column Address
Strobe
SCL
Clock for Presence
Detect
WE
Read / Write Input
SDA
Serial Data Out for
Presence Detect
CKE0, CKE1 *)
Clock Enable
N.C.
No Connection
CLK0, CLK1
Clock Input
*) CS1 and CKE1 on two bank modules only
INFINEON Technologies
2
9.01
HYS64V8200GDL/HYS64V16220GDL
144 pin SO-DIMM SDRAM Modules
Pin Configuration
PIN #
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
67
69
71
Front
Side
VSS
DQ0
DQ1
DQ2
DQ3
VCC
DQ4
DQ5
DQ6
DQ7
Vss
DQMB0
DQMB1
Vcc
A0
A1
A2
Vss
DQ8
DQ9
DQ10
DQ11
Vcc
DQ12
DQ13
DQ14
DQ15
Vss
NC
NC
CLK0
Vcc
RAS
WE
CS0
CS1
INFINEON Technologies
PIN #
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
58
60
62
64
66
68
70
72
Back
Side
PIN #
VSS
DQ32
DQ33
DQ34
DQ35
Vcc
DQ36
DQ37
DQ38
DQ39
Vss
DQMB4
DQMB5
Vcc
A3
A4
A5
Vss
DQ40
DQ41
DQ42
DQ43
Vcc
DQ44
DQ45
DQ46
DQ47
Vss
NC
NC
CKE0
Vcc
CAS
CKE1
N.C.(A12)
N.C.(A13)
73
75
77
79
81
83
85
87
89
91
93
95
97
99
101
103
105
107
109
111
113
115
117
119
121
123
125
127
129
131
133
135
137
139
141
143
3
Front
Side
NC
Vss
NC
NC
Vcc
DQ16
DQ17
DQ18
DQ19
Vss
DQ20
DQ21
DQ22
DQ23
Vcc
A6
A8
Vss
A9
A10
Vcc
DQMB2
DQMB3
Vss
DQ24
DQ25
DQ26
DQ27
Vcc
DQ28
DQ29
DQ30
DQ31
Vss
SDA
Vcc
PIN #
74
76
78
80
82
84
86
88
90
92
94
96
98
100
102
104
106
108
110
112
114
116
118
120
122
124
126
128
130
132
134
136
138
140
142
144
Back
Side
CLK1
Vss
NC
NC
Vcc
DQ48
DQ49
DQ50
DQ51
Vss
DQ52
DQ53
DQ54
DQ55
Vcc
A7
BA0
Vss
BA1
A11
Vcc
DQMB6
DQMB7
Vss
DQ56
DQ57
DQ58
DQ59
Vcc
DQ60
DQ61
DQ62
DQ63
Vss
SCL
Vcc
9.01
HYS64V8200GDL/HYS64V16220GDL
144 pin SO-DIMM SDRAM Modules
WE
CS0
CS WE
LDQM
DQ0-DQ7
DQMB0
DQ0-DQ7
DQMB1
DQ8-DQ15
DQMB4
DQ32-DQ39
DQMB5
DQ40-DQ47
UDQM
DQ8-DQ15
D0
CS WE
LDQM
DQ0-DQ7
DQMB2
DQ16-DQ23
DQMB3
DQ24-DQ31
DQMB6
DQ48-DQ55
DQMB7
DQ56-DQ63
UDQM
DQ8-DQ15
D1
A0-A11, BA0, BA1
D0-D3
VCC
D0-D3
D0-D3
RAS
D0-D3
CAS
D0-D3
CKE0
D0-D3
CLK0
4 SDRAM
UDQM
DQ8-DQ15
D2
CS WE
LDQM
DQ0-DQ7
UDQM
DQ8-DQ15
D3
E2PROM
(256 word x 8 Bit)
C 1-C 4
VSS
CS WE
LDQM
DQ0-DQ7
SA0
SA1
SA2
SCL
SDA
Note: All resistors are 10 Ω
CLK1
10 pF
SPB04133
Block Diagram for one bank 8M x 64 SDRAM DIMM - Module
INFINEON Technologies
4
9.01
HYS64V8200GDL/HYS64V16220GDL
144 pin SO-DIMM SDRAM Modules
WE
CS0
CS1
DQMB0
DQ0-DQ7
DQMB1
DQ8-DQ15
DQMB2
DQ16-DQ23
DQMB3
DQ24-DQ31
CS
WE
LDQM
DQ0-DQ7
CS
WE
LDQM
DQ0-DQ7
UDQM
DQ8-DQ15
D0
UDQM
DQ8-DQ15
D4
CS
WE
LDQM
DQ0-DQ7
CS
WE
LDQM
DQ0-DQ7
UDQM
DQ8-DQ15
D1
UDQM
DQ8-DQ15
D5
A0-A11, BA0, BA1
DQMB4
DQ32-DQ39
DQMB5
DQ40-DQ47
DQMB6
DQ48-DQ55
DQMB7
DQ56-DQ63
CS
WE
LDQM
DQ0-DQ7
CS
WE
LDQM
DQ0-DQ7
UDQM
DQ8-DQ15
D2
UDQM
DQ8-DQ15
D6
CS
WE
LDQM
DQ0-DQ7
CS
WE
LDQM
DQ0-DQ7
UDQM
DQ8-DQ15
D3
UDQM
DQ8-DQ15
D7
D0-D7
VC C
E 2 PROM
(256 word x 8 Bit)
D0-D7
C
VSS
D0-D7
RAS
D0-D7
CAS
D0-D7
CKE0
D0-D3
CKE1
D4-D7
CLK0
4 SDRAM
CLK1
4 SDRAM
SA0
SA1
SA2
SCL
SDA
Note: All resistors are 10 Ω
Block Diagram for two bank 16M x 64 SDRAM DIMM - Module
INFINEON Technologies
5
9.01
HYS64V8200GDL/HYS64V16220GDL
144 pin SO-DIMM SDRAM Modules
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
min.
max.
Unit
Input / Output voltage relative to VSS
VIN, VOUT
– 1.0
4.6
V
Power supply voltage on VDD
VDD
– 1.0
4.6
V
Storage temperature range
T STG
-55
+150
oC
Power dissipation (per SDRAM component)
PD
–
1
W
Data out current (short circuit)
IOS
–
50
mA
Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability
DC Characteristics
TA = 0 to 70 °C; VSS = 0 V; VDD = 3.3 V ± 0.3 V
Parameter
Symbol
Limit Values
min.
max.
Unit
Input high voltage
VIH
2.0
Vcc+0.3
Input low voltage
VIL
– 0.5
0.8
V
Output high voltage (IOUT = – 4.0 mA)
VOH
2.4
–
V
V
Output low voltage (IOUT = 4.0 mA)
VOL
–
0.4
V
Input leakage current, any input
(0 V < VIN < 3.6 V, all other inputs = 0 V)
II(L)
– 20
20
µA
Output leakage current
(DQ is disabled, 0 V < VOUT < VDD)
IO(L)
– 20
20
µA
Capacitance
TA = 0 to 70 °C; VDD = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Symbol
Limit Values
Unit
8M x 64
max.
16M x 64
max.
Input capacitance (A0 to A11, BA0, BA1)
CI1
28
52
pF
Input capacitance (RAS, CAS, WE, CKE0)
CI2
25
46
pF
Input Capacitance (CLK0, CLK1)
CI3
35
35
pF
Input capacitance (CS0)
CI4
25
30
pF
Input capacitance (DQMB0-DQMB7)
CI5
10
15
pF
Input / Output capacitance (DQ0-DQ63)
CIO
12
18
pF
Input Capacitance (SCL,SA0-2)
Csc
8
8
pF
Input/Output Capacitance
Csd
0
10
pF
INFINEON Technologies
6
9.01
HYS64V8200GDL/HYS64V16220GDL
144 pin SO-DIMM SDRAM Modules
Operating Currents per memory bank
(TA = 0 to 70oC, VDD = 3.3V ± 0.3V)
(Recommended Operating Conditions unless otherwise noted)
Parameter & Test Condition
Symb.
-7/-7.5
-8
Note
ICC1
600
560
mA
mA
mA
1
ICC2P
6
6
mA
1
ICC2PS
4
4
mA
1
ICC2N
160
140
mA
1
ICC2NS
20
20
mA
1
OPERATING CURRENT
trc=trcmin., tck=tckmin.
Ouputs open, Burst Length = 4, CL=3
All banks operated in random access,
all banks operated in ping-pong manner
to maximize gapless data access
PRECHARGE STANDBY CURRENT in
Power Down Mode
CS =VIH (min.), CKE<=Vil(max)
PRECHARGE STANDBY CURRENT in
Non-Power Down Mode
CS = VIH (min.), CKE>=Vih(min)
tck = min.
tck = Infinity
tck = min.
tck = Infinity
NO OPERATING CURRENT
CKE>=VIH(min.)
ICC3N
200
180
mA
1
tck = min., CS = VIH(min),
active state ( max. 4 banks)
CKE<=VIL(max.)
ICC3P
40
40
mA
1
BURST OPERATING CURRENT
tck = min.,
Read command cycling
ICC4
600
560
mA
1,2
AUTO REFRESH CURRENT
tck = min.,
Auto Refresh command cycling
mA
1
ICC5
720
680
ICC6
3.2
3.2
mA
1
SELF REFRESH CURRENT
Self Refresh Mode, CKE=0.2V
Notes:
1. These parameters depend on the cycle rate. These values are measured at 133 MHz for-7/ -7.5 and
100 MHz for -8 modules. Input signals are changed once during tck, excepts for ICC6 and for standby
currents when tck=infinity.
2. These parameters are measured with continuous data stream during read access and all DQ toggling.
CL=3 and BL=4 is assumed and the data-out current is excluded.
INFINEON Technologies
7
9.01
HYS64V8200GDL/HYS64V16220GDL
144 pin SO-DIMM SDRAM Modules
AC Characteristics 1)2)
TA = 0 to 70 °C; VSS = 0 V; VDD = 3.3 V ± 0.3 V, tT = 1 ns
Symbol
Parameter
Unit
Limit Values
-7
PC133-222
-7.5
PC133-333
-8
PC100-222
min.
max.
min.
max.
min.
max.
CAS Latency = 3 tCK
CAS Latency = 2
7.5
7.5
–
–
7.5
10
–
–
10
10
–
–
CAS Latency = 3 tCK
CAS Latency = 2
–
–
133
133
–
–
133
100
–
–
100
100
Access Time from Clock
CAS Latency = 3 tAC
CAS Latency = 2
–
–
5.4
5.4
–
–
5.4
6
–
–
6
6
ns
ns
–
2.5
–
3
–
ns
Clock and Access Time
Clock Cycle Time
ns
ns
Clock Frequency
MHz
MHz
2,
3
Clock High Pulse Width
tCH
2.5
Clock Low Pulse Width
tCL
2.5
–
2.5
–
3
–
ns
Transition time
tT
0.3
1.2
0.3
1.2
0.5
2
ns
Input Setup Time
tIS
1.5
–
1.5
–
2
–
ns
4
Input Hold Time
tIH
0.8
–
0.8
–
1
–
ns
4
Power Down Mode Entry time
tSB
Setup and Hold Parameters
–
1
–
1
–
1
CLK 4
Power Down Mode Exit Setup Time tPDE
1
–
1
–
1
–
CLK 4
tRSC
2
–
2
–
2
–
CLK
Row to Column Delay Time
tRCD
15
–
20
–
20
–
ns
5
Row Precharge Time
tRP
15
–
20
–
20
–
ns
5
Row Active Time
tRAS
42
100k
45
100k
50
100k
ns
5
Row Cycle Time
tRC
Mode Register Set-up time
Common Parameters
60
–
67
–
70
–
ns
5
Activate(a) to Activate(b) Command tRRD
period
14
–
15
–
16
–
ns
5
CAS(a) to CAS(b) Command period tCCD
1
–
1
–
1
–
CLK
INFINEON Technologies
8
9.01
HYS64V8200GDL/HYS64V16220GDL
144 pin SO-DIMM SDRAM Modules
Parameter
Symbol
Unit
Limit Values
-7
PC133-222
-7.5
PC133-333
-8
PC100-222
min.
max.
min.
max.
min.
max.
Refresh Cycle
Refresh Period
(4096 cycles)
tREF
–
64
–
64
–
64
ms
Self Refresh Exit Time
tSREX
1
–
1
–
1
–
CLK 6
Data Out Hold Time
tOH
3
–
3
–
3
–
ns
Data Out to Low Impedance Time
tLZ
0
–
0
–
0
–
ns
Data Out to High Impedance Time
tHZ
3
7
3
7
3
8
ns
DQM Data Out Disable Latency
tDQZ
–
2
–
2
–
2
CLK
Data Input to Precharge
(write recovery)
tWR
2
–
2
–
2
–
CLK
DQM Write Mask Latency
tDQW
0
–
0
–
0
–
CLK
Read Cycle
7
Write Cycle
INFINEON Technologies
9
9.01
HYS64V8200GDL/HYS64V16220GDL
144 pin SO-DIMM SDRAM Modules
Notes:
1. All AC characteristics shown are for SDRAM components.
An initial pause of 100µs is required after power-up, then a Precharge All Banks command must
be given followed by 8 Auto Refresh (CBR) cycles before the Mode Register Set Operation can
begin.
2. AC timing tests have Vil = 0.4 V and Vih = 2.4 V with the timing referenced to the 1.4 V crossover
point. The transition time is measured between Vih and Vil. All AC measurements assume tT =1ns
with the AC output load circuit shownSpecified tac and toh parameters are measured with a 50
pF only, without any resistive termination and with a input signal of 1V / ns edge rate between
0.8V and 2.0 V
..
t CH
2.4 V
0.4 V
1.4 V
CLOCK
t CL
t IS
tT
t IH
1.4 V
INPUT
tAC
t LZ
tAC
t OH
I/O
OUTPUT
1.4 V
t HZ
50 pF
Measurement conditions for
tac and toh
IO.vsd
3. If clock rising time is longer than 1ns, a time (tT -0.5) ns has to be added to this parameter.
4. If tT is longer than 1ns, a time (tT -1) ns has to be added to this parameter.
5. Any time that the refresh Period has been exceeded, a minimum of two Auto (CRB) Refresh
commands must be given to “wake-up“ the device.
6. Self Refresh Exit is a synchronous operation and begins on the 2nd positive clock edge after
CKE returns high. Self Refresh Exit is not complete until a time period equal to tRC is satisfied
once the Self Refresh Exit command is registered.
7. Referenced to the time which the output achieves the open circuit condition, not to output voltage
levels.
INFINEON Technologies
10
9.01
HYS64V8200GDL/HYS64V16220GDL
144 pin SO-DIMM SDRAM Modules
Serial Presence Detects
A serial presence detect storage device - E2PROM - is assembled onto the module. Information
about the module configuration, speed, etc. is written into the E 2PROM device during module
production using a serial presence detect protocol ( I2C synchronous 2-wire bus)
SPD-Table:
Byte#
Description
SPD Entry Value
0
1
2
3
4
5
6
7
8
9
10
11
12
Number of SPD bytes
Total bytes in Serial PD
Memory Type
Number of Row Addresses
Number of Column Addresses
Number of DIMM Banks
Module Data Width
Module Data Width (cont’d)
Module Interface Levels
SDRAM Cycle Time at CL=3
SDRAM Access time from Clock at CL=3
Dimm Config (Error Det/Corr.)
Refresh Rate/Type
128
256
SDRAM
12
9
1/2
64
0
LVTTL
7.5 / 10.0 ns
5.4 / 6.0 ns
none
Self-Refresh,
15.6µs
13
14
15
SDRAM width, Primary
Error Checking SDRAM data width
Minimum clock delay for back-to-back
random column address
Burst Length supported
Number of SDRAM banks
Supported CAS Latencies
CS Latencies
WE Latencies
SDRAM DIMM module attributes
16
17
18
19
20
21
22
23
24
25
26
27
SDRAM Device Attributes :General
SDRAM Cycle Time at CL = 2
SDRAM Access Time from Clock at
CL=2
SDRAM Cycle Time at CL = 1
SDRAM Access Time from Clock at
CL=1
Minimum Row Precharge Time
INFINEON Technologies
HEX
8M x 64
16M x 64
-7
-7.5
-8
-7
-7.5
-8
80
08
04
0C
09
01
02
40
00
01
75
75
A0
75
75
A0
54
54
60
54
54
60
00
80
10
00
01
n/a
tccd = 1 CLK
1, 2, 4 & 8
2
2, & 3
CS latency = 0
Write latency = 0
non buffered/non
reg.
Vcc tol +/- 10%
7.5 / 10.0 ns
5.4 / 6.0 ns
75
54
A0
60
A0
60
75
54
A0
60
A0
60
not supported
not supported
00
00
FF
FF
FF
FF
00
00
FF
FF
FF
FF
15/ 20 ns
0F
14
14
0F
14
14
11
0F
04
06
01
01
00
0E
9.01
HYS64V8200GDL/HYS64V16220GDL
144 pin SO-DIMM SDRAM Modules
SPD-Table (cont’d):
Byte#
Description
28
Minimum Row Active to Row Active
delay
29
Minimum RAS to CAS delay
30
Minimum Ras pulse width
31
Module Bank Density (per bank)
32
SDRAM input setup time
33
SDRAM input hold time
34
SDRAM data input setup time
35
SDRAM data input hold time
36-61 Superset information
62
SPD Revision
63
Checksum for bytes 0 - 62
64- Manufactures’s information (optional)
125
126 Frequency Specification
127 Details
128+ Unused storage locations
INFINEON Technologies
SPD Entry Value
14 / 15 / 16 ns
15 / 20 ns
42 / 45 ns
64MB
1.5 / 2 ns
0.8 / 1 ns
1.5 / 2 ns
0.8 / 1 ns
Hex
-7
0E
8Mx64
-7.5
-8
0F
10
0F
2A
14
2D
14
2D
15
08
15
08
15
08
15
08
20
10
20
10
-7
0E
16Mx64
-7.5
-8
0F
10
0F
2A
14
2D
14
2D
15
08
15
08
15
08
15
08
20
10
20
10
E2
0B
69
10
FF
12
Revision 1.2
E1
0A
PC100
68
64
87
C7
FF
12
9.01
HYS64V8200GDL/HYS64V16220GDL
144 pin SO-DIMM SDRAM Modules
Package Outlines
64 MByte SO-DIMM Module package (JEDEC MO-190)
HYS64V8200GDL
(144 pin, dual read-out, single in-line memory module)
67,6
± 0.15
3.8 max.
25.4
± 0.13
63,6
3.3 1
23.2
59
61
32.8
143
1 ± 0.1
2.6
4.6
2
1.5
1.8
60
62
144
20
6
4
3.7
4
Detail of Contacts
0.6
0.2 -0.15
0.25
2.55
Detail of Chamfer
0.2 -0.15
0.8
L-DIM-144-10
Note: All tol eran ces accord ing to JEDEC stan dard
INFINEON Technologies
13
9.01
HYS64V8200GDL/HYS64V16220GDL
144 pin SO-DIMM SDRAM Modules
128 MByte SO-DIMM Module package
HYS64V16220GDL
(144 pin, dual read-out, single in-line memory module)
67.6
± 0.15
3.8 max.
31.75
± 0.13
63.6
3.3 1
23.2
59
61
32.8
143
1± 0.1
2.5
24.5
4.6
2
1.5
1.8
60
62
144
20
6
4
3.7
4
0.25
0.2 -0.15
Detail of Chamfer
2.55
Detail of Contacts
0.6
0.2 -0.15
0.8
L-DIM-144-9
Note : All toleran ces according to JEDEC stan dard
INFINEON Technologies
14
9.01
HYS64V8200GDL/HYS64V16220GDL
144 pin SO-DIMM SDRAM Modules
Update Information:
5.6.99
29.9.99
3.12.99
17.1.2000
10.5.2000
19.7.2000
8.8.2000
25.9.2000
7.03.2001
5.09.2001
INFINEON Technologies
First and preliminary edition
Checksum added
PC133 timing changed according to INTELs PC133 specification
HYS64V8200GDL-7.5/-8 added
HYS64V162221GDL-7.5/-8 version with reduced height of
1060 mil = 29,92 mm (L-DIM-144-11) added
CKE1 in two bank block diagram added
128Mbyte version HYS64V16221GDL removed (no plans for production)
8Mx64 module height on page 2 corrected
-7 speed sort added
SCR: Table for Absolute Maximum Ratings added
15
9.01