IL66 DUAL CHANNEL ILD66 QUAD CHANNEL ILQ66 SINGLE CHANNEL Photodarlington Optocoupler FEATURES • Internal RBE for High Stability • Current Transfer Ratio is Tested at 2.0 mA and 0.7 mA Input IL/ILD/ILQ66 Series: –1, 100% min. at IF=2.0 mA, VCE=10 V –2, 300% min. at IF=2.0 mA, VCE=10 V –3, 400% min. at IF=0.7 mA, VCE=10 V –4, 500% min. at IF=2.0 mA, VCE=5.0 V • Four Available CTR Categories per Package Type • BVCEO>60 V • Standard DIP Packages • Underwriters Lab File #E52744 • V VDE 0884 Available with Option 1 Dimensions in inches (mm) Single Channel 2 3 pin one ID 1 .248 (6.30) .256 (6.50) 4 5 Cathode 2 5 NC 3 4 6 .300 (7.62) typ. .048 (0.45) .022 (0.55) .039 (1.00) Min. .130 (3.30) .150 (3.81) 18° 4° typ. .031 (0.80) min. DESCRIPTION Maximum Ratings Emitter Each Channel Peak Reverse Voltage .................................... 6.0 V Continuous Forward Current ........................ 60 mA Power Dissipation at 25°C......................... 100 mW Derate Linearly from 25°C ................... 1.33 mW/°C Detector (Each Channel) Power Dissipation at 25°C Ambient .......... 150 mW Derate Linearly from 25°C ..................... 2.0 mW/°C Package Isolation Test Voltage (t=1.0 sec.) ......... 5300 VRMS Total Package Power Dissipation at 25°C IL66.......................................................... 250 mW ILD66 ....................................................... 400 mW ILQ66....................................................... 500 mW Derate Linearly from 25°C IL66...................................................... 3.3 mW/°C ILD66 ................................................. 5.33 mW/°C ILQ66................................................. 6.67 mW/°C Creepage .................................................... ≥7 min Clearance .................................................... ≥7 min Comparative Tracking Index .............................175 Isolation Resistance VIO=500 V, TA=25°C............................... ≥1012 Ω VIO=500 V, TA=100°C............................. ≥1011 Ω Storage Temperature................... –55°C to +125°C Operating Temperature ............... –55°C to +100°C Lead Soldering Time at 260°C ....................10 sec. 6 .335 (8.50) .343 (8.70) D E IL66, ILD66, and ILQ66 are optically coupled isolators employing Gallium Arsenide infrared emitters and silicon photodarlington detectors. Switching can be accomplished while maintaining a high degree of isolation between driving and load circuits, with no crosstalk between channels. Anode 1 3°–9° .010 (.25) typ. .300–.347 (7.62–8.81) .031 (0.80) .035 (0.90) .018 (0.45) .022 (0.55) .114 (2.90) .130 (3.0) .100 (2.54) typ. Dual Channel pin one ID 4 3 Anode 1 2 .255 (6.48) .268 (6.81) 5 6 7 8 8 Emitter Cathode 2 7 Collector Cathode 3 6 Collector Anode 4 .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4° typ. 1 5 Emitter .300 (7.62) typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) 10° .020 (.51 ) .035 (.89 ) .100 (2.54) typ. .018 (.46) .022 (.56) 3°–9° .008 (.20) .012 (.30) Quad Channel pin one ID 8 7 6 5 4 3 2 1 .255 (6.48) .265 (6.81) 9 10 11 12 13 14 15 16 .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) Anode 1 16 Emitter Cathode 2 15 Collector Cathode 3 14 Collector Anode 4 13 Emitter Anode 5 12 Emitter Cathode 6 11 Collector Cathode 7 10 Collector Anode 8 9 .300 (7.62) typ. .031(.79) .130 (3.30) .150 (3.81) 4° .018 (.46) .022 (.56) .020(.51) .035 (.89) .100 (2.54)typ. Emitter .050 (1.27) 10° typ. 3°–9° .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) 2–95 March 1, 2000-00 Electrical Characteristics, TA=25°C Parameter Symbol Min. Typ. Max. Unit Condition Forward Voltage VF — 1.25 1.5 V IF=20 mA Reverse Current IR — 0.1 10 µA VR=6.0 V Capacitance C0 — 25 — pF VR=0 V Collector-Emitter BVCEO 60 — — V IC=1.0 mA, IF=0 Collector-Base (IL66) BVCBO 60 — — — IC=10 µA Leakage Current, Collector-Emitter ICEO — 1.0 100 nA VCE=50 V, IF=0 Capacitance, Collector-Emitter — — 3.4 — pF VCE=10 V CTR 100 400 — % IF=2.0 mA, VCE=10 V IL/ILD/ILQ66-2 300 500 — IF=2.0 mA, VCE=10 V IL/ILD/ILQ66-3 400 500 — IF=0.7 mA, VCE=10 V IL/ILD/ILQ66-4 500 750 — IF=2.0 mA, VCE=5.0 V GaAs Emitter Photodarlington Breakdown Voltage Coupled Characteristics Current Transfer Ratio IL/ILD/ILQ66-1 Saturation Voltage, Collector-Emitter VCEsat — 0.9 1.0 V IC=10 mA, IF=10 mA Rise Time -1, -2, -4 tr — — 200 µs VCC=10 V Fall Time -1, -2, -4 tf — — 200 IF=2.0 mA, RL=100 Ω Rise Time -3 tr — — 200 IF=0.7 mA Fall Time -3 tf — — 200 VCC=10 V, RL=100 Ω Figure 1. Forward voltage versus forward current NCTRce - Normalized CTRce 1.3 TA=-55°C 1.2 TA=25°C 1.1 1.0 0.9 TA=100°C 0.8 0.7 .1 1 10 IF - Forward Current - mA 100 NCTRce - Normalized CTRce Figure 2. Normalized non-saturated and saturated CTRce versus LED current 1.2 Normalized to: Ta = 25°C Vce = 5 V IF = 10 ma 1.0 0.8 0.4 0.2 Vce = 1 V 0.0 .1 1 VCE = 5 V 1.0 0.5 VCE = 1 V 0.0 .1 1 10 IF - LED Current - mA 100 1000 Figure 4. Non-saturated and saturated collector emitter current versus LED current 10000 1.5 10 IF - LED Current - mA 2.0 Normalized to: TA = 25°C VCE = 5 V IF = 2 mA Vce = 5 V 0.6 ICE - Collector-emitter current - mA VF - Forward Voltage - V 1.4 Figure 3. Normalized non-saturated and saturated CTRce versus LED current VCE = 1 V 1000 100 VCE = 5 V 10 1 .1 .01 .001 100 .1 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) 1 10 IF - LED Current - mA 100 IL/ILD/ILQ66 2–96 March 1, 2000-00 Figure 5. Collector-base photocurrent versus LED current tpLH - Low/High Propagation Delay - µs Icb - Photocurrent- µa 1000 Ta = 25°C 100 10 1 .1 .1 1 10 IF - LED Current - mA ICE - Collector-emitter current - mA TA = 25°C 1000 100 150 10KΩ 125 100 75 2KΩ Ta = 25°C Vcc = 5 V Vth = 1.5 V 50 25 220Ω 0 0 100 Figure 6. Collector-emitter current versus LED current 10000 Figure 9. Low/high propagation delay versus collector load resistance and LED current 5 10 15 IF - LED Current - mA 20 Figure 10. Switching waveform VCE = 5 V IF VCE = 1 V 10 1 VO .1 tD tR tPLH .01 .001 .1 1 10 100 IB - Base Current - µs 1000 tS tPHL Figure 7. Non-saturated and saturated HFE versus LED current VTH=1.5 V tF Figure 11. Switching schematic HFE - Forward Gain 25000 VCC=10 V TA = 25°C 20000 VCE = 5 V F=10 KHz, DF=50% 15000 RL VO 10000 5000 VCE = 1 V IF 0 .1 1 10 100 IB - Base Current - µA 1000 tpHL - High/Low Propagation Delay - µs Figure 8. High/low propagation delay versus collector g load resistance and LED current 50 40 10KΩ Ta = 25°C Vcc = 5 V Vth = 1.5 V 30 20 220Ω 10 0 0 5 10 15 IF - LED Current - mA 20 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) IL/ILD/ILQ66 2–97 March 1, 2000-00