ETC IL66-4

IL66
DUAL CHANNEL ILD66
QUAD CHANNEL ILQ66
SINGLE CHANNEL
Photodarlington Optocoupler
FEATURES
• Internal RBE for High Stability
• Current Transfer Ratio is Tested
at 2.0 mA and 0.7 mA Input
IL/ILD/ILQ66 Series:
–1, 100% min. at IF=2.0 mA, VCE=10 V
–2, 300% min. at IF=2.0 mA, VCE=10 V
–3, 400% min. at IF=0.7 mA, VCE=10 V
–4, 500% min. at IF=2.0 mA, VCE=5.0 V
• Four Available CTR Categories per
Package Type
• BVCEO>60 V
• Standard DIP Packages
• Underwriters Lab File #E52744
• V VDE 0884 Available with Option 1
Dimensions in inches (mm)
Single Channel
2
3
pin one ID
1
.248 (6.30)
.256 (6.50)
4
5
Cathode 2
5
NC 3
4
6
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.039
(1.00)
Min.
.130 (3.30)
.150 (3.81)
18°
4°
typ.
.031 (0.80) min.
DESCRIPTION
Maximum Ratings
Emitter Each Channel
Peak Reverse Voltage .................................... 6.0 V
Continuous Forward Current ........................ 60 mA
Power Dissipation at 25°C......................... 100 mW
Derate Linearly from 25°C ................... 1.33 mW/°C
Detector (Each Channel)
Power Dissipation at 25°C Ambient .......... 150 mW
Derate Linearly from 25°C ..................... 2.0 mW/°C
Package
Isolation Test Voltage (t=1.0 sec.) ......... 5300 VRMS
Total Package Power Dissipation at 25°C
IL66.......................................................... 250 mW
ILD66 ....................................................... 400 mW
ILQ66....................................................... 500 mW
Derate Linearly from 25°C
IL66...................................................... 3.3 mW/°C
ILD66 ................................................. 5.33 mW/°C
ILQ66................................................. 6.67 mW/°C
Creepage .................................................... ≥7 min
Clearance .................................................... ≥7 min
Comparative Tracking Index .............................175
Isolation Resistance
VIO=500 V, TA=25°C............................... ≥1012 Ω
VIO=500 V, TA=100°C............................. ≥1011 Ω
Storage Temperature................... –55°C to +125°C
Operating Temperature ............... –55°C to +100°C
Lead Soldering Time at 260°C ....................10 sec.
6
.335 (8.50)
.343 (8.70)
D E
IL66, ILD66, and ILQ66 are optically coupled isolators employing Gallium Arsenide infrared emitters and silicon photodarlington detectors.
Switching can be accomplished while maintaining
a high degree of isolation between driving and
load circuits, with no crosstalk between channels.
Anode 1
3°–9°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.114 (2.90)
.130 (3.0)
.100 (2.54) typ.
Dual Channel
pin one ID
4
3
Anode
1
2
.255 (6.48)
.268 (6.81)
5
6
7
8
8 Emitter
Cathode 2
7 Collector
Cathode 3
6 Collector
Anode 4
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
1
5 Emitter
.300 (7.62)
typ.
.031 (0.79)
.130 (3.30)
.150 (3.81)
.050 (1.27)
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
10°
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
.018 (.46)
.022 (.56)
3°–9°
.008 (.20)
.012 (.30)
Quad Channel
pin one ID
8
7
6
5
4
3
2
1
.255 (6.48)
.265 (6.81)
9
10
11 12
13
14
15
16
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
Anode
1
16 Emitter
Cathode
2
15 Collector
Cathode
3
14 Collector
Anode
4
13 Emitter
Anode
5
12 Emitter
Cathode
6
11 Collector
Cathode
7
10 Collector
Anode
8
9
.300 (7.62)
typ.
.031(.79)
.130 (3.30)
.150 (3.81)
4°
.018 (.46)
.022 (.56)
.020(.51)
.035 (.89)
.100 (2.54)typ.
Emitter
.050 (1.27)
10°
typ.
3°–9°
.008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30) .230 (5.84)
.250 (6.35)
 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–95
March 1, 2000-00
Electrical Characteristics, TA=25°C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Forward Voltage
VF
—
1.25
1.5
V
IF=20 mA
Reverse Current
IR
—
0.1
10
µA
VR=6.0 V
Capacitance
C0
—
25
—
pF
VR=0 V
Collector-Emitter
BVCEO
60
—
—
V
IC=1.0 mA, IF=0
Collector-Base (IL66)
BVCBO
60
—
—
—
IC=10 µA
Leakage Current, Collector-Emitter
ICEO
—
1.0
100
nA
VCE=50 V, IF=0
Capacitance, Collector-Emitter
—
—
3.4
—
pF
VCE=10 V
CTR
100
400
—
%
IF=2.0 mA, VCE=10 V
IL/ILD/ILQ66-2
300
500
—
IF=2.0 mA, VCE=10 V
IL/ILD/ILQ66-3
400
500
—
IF=0.7 mA, VCE=10 V
IL/ILD/ILQ66-4
500
750
—
IF=2.0 mA, VCE=5.0 V
GaAs Emitter
Photodarlington
Breakdown Voltage
Coupled Characteristics
Current Transfer Ratio
IL/ILD/ILQ66-1
Saturation Voltage, Collector-Emitter
VCEsat
—
0.9
1.0
V
IC=10 mA, IF=10 mA
Rise Time -1, -2, -4
tr
—
—
200
µs
VCC=10 V
Fall Time -1, -2, -4
tf
—
—
200
IF=2.0 mA, RL=100 Ω
Rise Time -3
tr
—
—
200
IF=0.7 mA
Fall Time -3
tf
—
—
200
VCC=10 V, RL=100 Ω
Figure 1. Forward voltage versus forward current
NCTRce - Normalized CTRce
1.3
TA=-55°C
1.2
TA=25°C
1.1
1.0
0.9
TA=100°C
0.8
0.7
.1
1
10
IF - Forward Current - mA
100
NCTRce - Normalized CTRce
Figure 2. Normalized non-saturated and saturated
CTRce versus LED current
1.2
Normalized to:
Ta = 25°C
Vce = 5 V
IF = 10 ma
1.0
0.8
0.4
0.2
Vce = 1 V
0.0
.1
1
VCE = 5 V
1.0
0.5
VCE = 1 V
0.0
.1
1
10
IF - LED Current - mA
100
1000
Figure 4. Non-saturated and saturated collector
emitter current versus LED current
10000
1.5
10
IF - LED Current - mA
2.0
Normalized to:
TA = 25°C
VCE = 5 V
IF = 2 mA
Vce = 5 V
0.6
ICE - Collector-emitter
current - mA
VF - Forward Voltage - V
1.4
Figure 3. Normalized non-saturated and saturated
CTRce versus LED current
VCE = 1 V
1000
100
VCE = 5 V
10
1
.1
.01
.001
100
.1
 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
1
10
IF - LED Current - mA
100
IL/ILD/ILQ66
2–96
March 1, 2000-00
Figure 5. Collector-base photocurrent versus LED
current
tpLH - Low/High Propagation
Delay - µs
Icb - Photocurrent- µa
1000
Ta = 25°C
100
10
1
.1
.1
1
10
IF - LED Current - mA
ICE - Collector-emitter
current - mA
TA = 25°C
1000
100
150
10KΩ
125
100
75
2KΩ
Ta = 25°C
Vcc = 5 V
Vth = 1.5 V
50
25
220Ω
0
0
100
Figure 6. Collector-emitter current versus LED current
10000
Figure 9. Low/high propagation delay versus collector load
resistance and LED current
5
10
15
IF - LED Current - mA
20
Figure 10. Switching waveform
VCE = 5 V
IF
VCE = 1 V
10
1
VO
.1
tD
tR
tPLH
.01
.001
.1
1
10
100
IB - Base Current - µs
1000
tS
tPHL
Figure 7. Non-saturated and saturated HFE versus
LED current
VTH=1.5 V
tF
Figure 11. Switching schematic
HFE - Forward Gain
25000
VCC=10 V
TA = 25°C
20000
VCE = 5 V
F=10 KHz,
DF=50%
15000
RL
VO
10000
5000
VCE = 1 V
IF
0
.1
1
10
100
IB - Base Current - µA
1000
tpHL - High/Low Propagation
Delay - µs
Figure 8. High/low propagation delay versus
collector
g load resistance and LED current
50
40
10KΩ
Ta = 25°C
Vcc = 5 V
Vth = 1.5 V
30
20
220Ω
10
0
0
5
10
15
IF - LED Current - mA
20
 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
IL/ILD/ILQ66
2–97
March 1, 2000-00