PRELIMINARY <SMALL-SIGNAL TRANSISTOR> INA6002AC1 Notice : This is not a final specification. Some parametric subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCLIPTION OUTLINE DRAWING Unit:mm 2.8 INA6002AC1 is a silicon PNP epitaxial type transistor. 1.5 0.95 0.95 ・Super mini package for easy mounting. (1) (2) 1.9 2.8 FEATURE 0.65 0.4 0.65 It is designed with high voltage. ・Hige voltage VCEO=-300V (3) 0.13 0∼0.1 DC/DC convertor, High voltage switching 0.8 1.1 APPLICATION TERMINAL CONNECTER (1) BASE (2) EMITTER (3) COLLECTOR JEITA:SC-59 JEDEC:Similar toTO-236 MAXIMUM RATINGS (Ta=25℃) Symbol Parameter Ratings Unit -300 V -7 V VCBO Collector-Base Voltage VEBO Emitter-Base Voltage VCEO Collector-Emitter Voltage -300 V IC Collector Current -50 mA PC Collector Dissipation 150 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55∼+150 ℃ MARKING 3W ELECTRIC CHARACTERISTICS (Ta=25℃) Symbol Parameter Test conditions Limits Min Typ Max Unit V(BR)CBO Collector-Base Breakdown Voltage IC=-50µA,IE=0 -300 - - V V(BR)EBO Emitter-Base Breakdown Voltage IE=-50µA,IC=0 -7 - - V V(BR)CEO Collector-Emitter Breakdown Voltage IC=-1mA,RBE=∞ -300 - - V Collector Cutoff Current VCB=-300V,IE=0 - - -0.5 µA µA ICBO IEBO Emitter Cutoff Current VEB=-5V,IC=0 - - -0.5 hFE DC Forward Current Gain VCE=-10V,IC=-1mA 50 - 305 - Collector-Emitter Saturation Voltage IC=-10mA,IB=-1mA - - -1.0 V Gain Bandwidth Product VCE=-6V,IE=10mA - 50 - MHz Collector Output Capacitance VCB=-6V,IE=0,f=1MHz - 2.6 - pF VCE(sat) fT Cob ISAHAYA ELECTRONICS CORPORATION PRELIMINARY <SMALL-SIGNAL TRANSISTOR> INA6002AC1 Notice : This is not a final specification. Some parametric subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE TYPCAL CHARACERISTICS Common Emitter Output Common Emitter Transfer -100 Ta=25℃ -40 -2.0mA -1.8mA -1.6mA -1.4mA -1.2mA -1.0mA -0.8mA -30 -0.6mA -0.4mA -0.2mA -20 -0.1mA -10 Ta=25℃ VCE=-10V Collector Current : IC (mA) Collector Current : IC (mA) -50 -10 Ta=125℃ 75℃ 25℃ -25℃ -1 IB=-0.05mA 0 -0.1 0 -5 -10 0 Collector-Emitter Voltage : VCE (V) -0.2 -0.8 -1 VCE(sat)-IC 100 25℃ -25℃ 10 Collector-Emitter Saturation Voltage : VCE(sat) (V) Ta=25℃ VCE=-10V Ta=125℃ 75℃ -10 Ta=25℃ IC/IB=10 -1 Ta=125℃ 75℃ -0.1 25℃ -25℃ -0.01 1 -0.1 -1 -10 -0.1 -100 -1 -10 -100 Collector Current : IC (mA) Collector Current : IC (mA) fT-IE Cob-VCB Ta=25℃ VCE=-30V -10V -6V 10 1 100 Collector Output Capacitance : Cob (pF) 100 Gain Bandwidth Product : fT (MHz) -0.6 Base-Emitter Voltage : VBE (V) hFE-IC 1000 DC Forward Current Gain : hFE -0.4 Ta=25℃ 10 1 1 10 Emitter Current : IE (mA) 100 -0.1 -1 -10 Collector-Base Voltage : VCB (V) ISAHAYA ELECTRONICS CORPORATION -100 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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