ISAHAYA INA6002AC1

PRELIMINARY
<SMALL-SIGNAL TRANSISTOR>
INA6002AC1
Notice : This is not a final specification.
Some parametric subject to change.
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCLIPTION
OUTLINE DRAWING
Unit:mm
2.8
INA6002AC1 is a silicon PNP epitaxial type transistor.
1.5
0.95
0.95
・Super mini package for easy mounting.
(1)
(2)
1.9
2.8
FEATURE
0.65
0.4
0.65
It is designed with high voltage.
・Hige voltage VCEO=-300V
(3)
0.13
0∼0.1
DC/DC convertor, High voltage switching
0.8
1.1
APPLICATION
TERMINAL CONNECTER
(1) BASE
(2) EMITTER
(3) COLLECTOR
JEITA:SC-59
JEDEC:Similar toTO-236
MAXIMUM RATINGS (Ta=25℃)
Symbol
Parameter
Ratings
Unit
-300
V
-7
V
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
VCEO
Collector-Emitter Voltage
-300
V
IC
Collector Current
-50
mA
PC
Collector Dissipation
150
mW
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55∼+150
℃
MARKING
3W
ELECTRIC CHARACTERISTICS (Ta=25℃)
Symbol
Parameter
Test conditions
Limits
Min
Typ
Max
Unit
V(BR)CBO
Collector-Base Breakdown Voltage
IC=-50µA,IE=0
-300
-
-
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE=-50µA,IC=0
-7
-
-
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC=-1mA,RBE=∞
-300
-
-
V
Collector Cutoff Current
VCB=-300V,IE=0
-
-
-0.5
µA
µA
ICBO
IEBO
Emitter Cutoff Current
VEB=-5V,IC=0
-
-
-0.5
hFE
DC Forward Current Gain
VCE=-10V,IC=-1mA
50
-
305
-
Collector-Emitter Saturation Voltage
IC=-10mA,IB=-1mA
-
-
-1.0
V
Gain Bandwidth Product
VCE=-6V,IE=10mA
-
50
-
MHz
Collector Output Capacitance
VCB=-6V,IE=0,f=1MHz
-
2.6
-
pF
VCE(sat)
fT
Cob
ISAHAYA ELECTRONICS CORPORATION
PRELIMINARY
<SMALL-SIGNAL TRANSISTOR>
INA6002AC1
Notice : This is not a final specification.
Some parametric subject to change.
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
TYPCAL CHARACERISTICS
Common Emitter Output
Common Emitter Transfer
-100
Ta=25℃
-40
-2.0mA
-1.8mA
-1.6mA
-1.4mA
-1.2mA
-1.0mA
-0.8mA
-30
-0.6mA
-0.4mA
-0.2mA
-20
-0.1mA
-10
Ta=25℃
VCE=-10V
Collector Current : IC (mA)
Collector Current : IC (mA)
-50
-10
Ta=125℃
75℃
25℃
-25℃
-1
IB=-0.05mA
0
-0.1
0
-5
-10
0
Collector-Emitter Voltage : VCE (V)
-0.2
-0.8
-1
VCE(sat)-IC
100
25℃
-25℃
10
Collector-Emitter
Saturation Voltage : VCE(sat) (V)
Ta=25℃
VCE=-10V
Ta=125℃
75℃
-10
Ta=25℃
IC/IB=10
-1
Ta=125℃
75℃
-0.1
25℃
-25℃
-0.01
1
-0.1
-1
-10
-0.1
-100
-1
-10
-100
Collector Current : IC (mA)
Collector Current : IC (mA)
fT-IE
Cob-VCB
Ta=25℃
VCE=-30V
-10V
-6V
10
1
100
Collector Output Capacitance : Cob (pF)
100
Gain Bandwidth Product : fT (MHz)
-0.6
Base-Emitter Voltage : VBE (V)
hFE-IC
1000
DC Forward Current Gain : hFE
-0.4
Ta=25℃
10
1
1
10
Emitter Current : IE (mA)
100
-0.1
-1
-10
Collector-Base Voltage : VCB (V)
ISAHAYA ELECTRONICS CORPORATION
-100
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
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mishap.
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Aug.2011