Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.031C IR2117 SINGLE CHANNEL DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout n CMOS Schmitt-triggered inputs with pull-down n Output in phase with input Description VOFFSET 600V max. IO+/- 200 mA / 420 mA VOUT 10 - 20V ton/off (typ.) 125 & 105 ns Packages The IR2117 is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 600 volts. Typical Connection up to 600V VCC IN VCC IN COM To Order VB HO VS TO LOAD CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-75 Previous Datasheet Index Next Data Sheet IR2117 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 5 through 8. Symbol Parameter Definition Value Min. Max. VB High Side Floating Supply Voltage -0.3 625 VS High Side Floating Supply Offset Voltage VB - 25 VB + 0.3 VHO High Side Floating Output Voltage VS - 0.3 VB + 0.3 VCC Logic Supply Voltage -0.3 25 VIN Logic Input Voltage -0.3 VCC + 0.3 dVs/dt PD RθJA Allowable Offset Supply Voltage Transient (Figure 2) — 50 Package Power Dissipation @ TA ≤ +25°C (8 Lead DIP) — 1.0 (8 Lead SOIC) — 0.625 (8 Lead DIP) — 125 (8 Lead SOIC) — 200 Thermal Resistance, Junction to Ambient TJ Junction Temperature — 150 TS Storage Temperature -55 150 TL Lead Temperature (Soldering, 10 seconds) — 300 Units V V/ns W °C/W °C Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential. Symbol Parameter Definition Value Min. Max. VB High Side Floating Supply Absolute Voltage VS + 10 VS + 20 VS High Side Floating Supply Offset Voltage Note 1 600 VHO High Side Floating Output Voltage VS VB VCC Logic Supply Voltage 10 20 VIN Logic Input Voltage 0 VCC TA Ambient Temperature -40 125 Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. B-76 CONTROL INTEGRATED C IRCUIT DESIGNERS MANUAL To Order Units V °C Previous Datasheet Index Next Data Sheet IR2117 Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3. Symbol Parameter Definition Value Min. Typ. Max. Units Test Conditions t on Turn-On Propagation Delay — 125 200 VS = 0V t off Turn-Off Propagation Delay — 105 180 VS = 600V tr Turn-On Rise Time — 80 130 tf Turn-Off Fall Time — 40 65 ns Static Electrical Characteristics VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO. Symbol VIH VIL Parameter Definition Value Min. Typ. Max. Units Test Conditions Logic “1” Input Voltage Logic “0” Input Voltage 6.4 — — VCC = 10V 9.5 — — VCC = 15V 12.6 — — — — 3.8 — — 6.0 VCC = 15V VCC = 20V V VCC = 20V VCC = 10V — — 8.3 VOH High Level Output Voltage, VBIAS - VO — — 100 VOL Low Level Output Voltage, VO — — 100 I LK Offset Supply Leakage Current — — 50 VB = VS = 600V I QBS — 50 240 VIN = 0V or VCC IQCC Quiescent VBS Supply Current Quiescent VCC Supply Current — 70 340 IIN+ Logic “1” Input Bias Current — 20 40 VIN = VCC IIN- Logic “0” Input Bias Current — — 1.0 VIN = 0V VBSUV+ VBS Supply Undervoltage Positive Going Threshold 7.6 8.6 9.6 VBSUV- VBS Supply Undervoltage Negative Going Threshold 7.2 8.2 9.2 VCCUV+ VCC Supply Undervoltage Positive Going Threshold 7.6 8.6 9.6 VCCUV- VCC Supply Undervoltage Negative Going Threshold 7.2 8.2 9.2 IO+ Output High Short Circuit Pulsed Current 200 250 — I O- Output Low Short Circuit Pulsed Current 420 500 — To Order mV µA IO = 0A IO = 0A VIN = 0V or VCC V VO = 0V, VIN = VCC mA PW ≤ 10 µs VO = 15V, VIN = 0V PW ≤ 10 µs CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-77 Previous Datasheet Index Next Data Sheet IR2117 Functional Block Diagram VCC VB UV DETECT HV LEVEL SHIFT PULSE FILTER R Q R S HO IN PULSE GEN VS UV DETECT COM Lead Definitions Lead Symbol Description VCC IN COM VB HO VS Logic and gate drive supply Logic input for gate driver output (HO), in phase with HO Logic ground High side floating supply High side gate drive output High side floating supply return Lead Assignments 8 Lead DIP S0-8 IR2117 IR2117S Part Number B-78 CONTROL INTEGRATED C IRCUIT DESIGNERS MANUAL To Order Previous Datasheet Index Next Data Sheet IR2117 Device Information Process & Design Rule Transistor Count Die Size Die Outline Thickness of Gate Oxide Connections First Layer Second Layer Contact Hole Dimension Insulation Layer Passivation Method of Saw Method of Die Bond Wire Bond Leadframe Package HVDCMOS 4.0 µm 114 70 X 77 X 26 (mil) Material Width Spacing Thickness Material Width Spacing Thickness Material Thickness Material Thickness Method Material Material Die Area Lead Plating Types Materials 800Å Poly Silicon 4 µm 6 µm 5000Å Al - Si (Si: 1.0% ±0.1%) 6 µm 9 µm 20,000Å 8 µm X 8 µm PSG (SiO2) 1.5 µm PSG (SiO2) 1.5 µm Full Cut Ablebond 84 - 1 Thermo Sonic Au (1.0 mil / 1.3 mil) Cu Ag Pb : Sn (37 : 63) 8 Lead PDIP / SO-8 EME6300 / MP150 / MP190 Remarks: To Order CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-79 Previous Datasheet Index Next Data Sheet IR2117 IN 2 HO Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage Transient Test Circuit 50% 50% IN ton tr toff 90% tf 90% 3 HO Figure 3. Switching Time Test Circuit B-80 CONTROL INTEGRATED C IRCUIT DESIGNERS MANUAL 10% 10% Figure 4. Switching Time Waveform Definition To Order Previous Datasheet Index Next Data Sheet IR2117 320V 150 320V 150 140V 140V 125 100 75 10V 50 Junction Temperature (°C) Junction Temperature (°C) 125 25 10V 75 50 25 0 1E+2 100 0 1E+3 1E+4 1E+5 1E+6 1E+2 1E+3 Frequency (Hz) 1E+4 1E+5 1E+6 Frequency (Hz) Figure 5. IR2117 TJ vs. Frequency (IRFBC20) Ω, VCC = 15V RGATE = 33Ω 320V 140V 150 Figure 6. IR2117 TJ vs. Frequency (IRFBC30) Ω , VCC = 15V RGATE = 22Ω 10V 320V 140V 150 10V 125 Junction Temperature (°C) Junction Temperature (°C) 125 100 75 50 25 75 50 25 0 1E+2 100 0 1E+3 1E+4 1E+5 Frequency (Hz) Figure 7. IR2117 TJ vs. Frequency (IRFBC40) Ω, VCC = 15V RGATE = 15Ω To Order 1E+6 1E+2 1E+3 1E+4 1E+5 1E+6 Frequency (Hz) Figure 8. IR2117 TJ vs. Frequency (IRFPE50) Ω , VCC = 15V RGATE = 10Ω CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-81