PD- 91849D
IRF7233
HEXFET® Power MOSFET
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
VDSS = -12V
RDS(on) = 0.020Ω
T op V ie w
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-12
±9.5
±6.0
±76
2.5
1.6
0.02
60
± 12
-55 to + 150
V
W/°C
mJ
V
°C
Max.
Units
50
°C/W
A
W
Thermal Resistance
Parameter
RθJA
www.irf.com
Maximum Junction-to-Ambient
1
7/7/99
IRF7233
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-14
-12
–––
–––
–––
-0.6
3.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = -5.0mA
––– –––
V
VGS = 0V, I D = -250µA
0.001 ––– V/°C Reference to 25°C, ID = -1mA
0.013 0.020
VGS = -4.5V, I D = -9.5A
Ω
0.023 0.033
VGS = -2.5V, I D = -6.0A
––– –––
V
VDS = VGS, ID = -250µA
––– –––
S
VDS = -10V, ID = -9.5A
––– -10
VDS = -12V, VGS = 0V
––– -1.0
VDS = -9.6V, VGS = 0V
µA
––– -100
VDS = -12V, VGS = 0V, TJ = 70°C
––– -100
nA VGS = -12V
––– 100
VGS = 12V
49
74
ID = -9.5A
9.3
14
nC
VDS = -10V
22
32
VGS = -5.0V
26 –––
VDD = -10V
540 –––
ID = -9.5A
ns
77 –––
RD = 1.0Ω
370 –––
RG = 6.2Ω
4530 6000
VGS = 0V
2400 –––
pF
VDS = -10V
2220 –––
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-2.5
–––
–––
-76
–––
–––
–––
–––
43
35
-1.2
65
52
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.5A, VGS = 0V
TJ = 25°C, IF = -2.5A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
When mounted on 1 inch square copper board, t<10 sec
Starting TJ = 25°C, L = 1.3mH
RG = 25Ω, IAS = 9.5A.
www.irf.com
IRF7233
100
100
VG S
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BO TTO M - 1.5V
VG S
- 7 .5 V
- 5 .0 V
- 4 .0 V
- 3 .5 V
- 3 .0 V
- 2 .5 V
- 2 .0 V
B O TT O M - 1 .5 V
TO P
80
-ID , D ra in-to-S o urce C urre nt (A )
-I D , Drain-to-S ource C urrent (A )
TOP
60
40
20
-1.5V
0
0
2
4
20µs PULSE W IDTH
T J = 25°C
6
8
A
80
60
40
20
0
10
0
-V D S , D ra in-to-Source V oltage (V)
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , D ra in -to-S ou rc e C urre n t (A )
2.0
T J = 2 5 °C
TJ = 1 5 0 ° C
10
V D S = -1 0 V
2 0 µ s P U L S E W ID TH
1.5
2.0
2.5
-VG S , G a te -to -S o u rc e V o lta ge (V )
Fig 3. Typical Transfer Characteristics
www.irf.com
4
6
8
A
10
Fig 2. Typical Output Characteristics
100
1.0
2
20 µs PU L SE W ID TH
T J = 1 50°C
-VD S , D rain-to-Sou rce V oltage (V )
Fig 1. Typical Output Characteristics
1
-1 .5 V
3.0
A
I D = -9.5A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7233
10
V G S = 0V,
f = 1kHz
C iss = Cg s + C g d , Cd s SH ORTE D
C rss = C g d
C o ss = C d s + C g d
5000
C iss
4000
3000
C o ss
C rss
2000
2
4
6
8
10
8
6
4
2
0
A
0
ID = -9.5A
VDS =-10V
-VGS, Gate-to-Source Voltage (V)
C , C apac it ance (pF )
6000
0
12
30
40
50
60
70
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-II D , Drain Current (A)
-I S D , Rev erse Drain Current (A)
20
QG , Total Gate Charge (nC)
-VD S , D rain-to-So urc e Voltage (V)
T J = 150°C
100
TJ = 25°C
10
V G S = 0V
1
0.0
1.0
2.0
-VS D , S ou rce-to-D ra in Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
A
3.0
100us
1ms
10
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRF7233
10.0
EAS , Single Pulse Avalanche Energy (mJ)
140
-ID , Drain Current (A)
8.0
6.0
4.0
2.0
0.0
25
50
75
100
125
150
ID
-4.2A
-7.6A
BOTTOM -9.5A
TOP
120
100
80
60
40
20
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( ° C)
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
P DM
0.02
1
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF7233
SO-8 Package Details
D IM
D
-B -
5
E
-A -
5
A
8
7
6
5
1
2
3
4
e
6X
H
0.2 5 (.0 10 )
M
A M
θ
e1
-C-
0 .10 (.00 4)
B 8X
0 .25 (.01 0)
A1
L
8X
6
C
8X
M C A S B S
N O TE S :
1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2.
2 . C O N TRO L LIN G D IM EN SIO N : IN C H .
3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S).
4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA .
5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S
M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6).
6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
M IN
M AX
.0532
.0688
1 .35
1 .75
.0040
.0098
0 .10
0 .25
B
.014
.018
0 .36
0 .46
C
.0 075
.0 098
0 .19
0.25
D
.1 89
.1 96
4 .80
4.98
E
.150
.157
3 .81
3 .99
e1
θ
A
M IL LIM E T E R S
MAX
A1
e
K x 45 °
IN C H E S
M IN
.050 B A S IC
1.2 7 B A S IC
.025 B A S IC
0.6 35 B A S IC
H
.2 284
.2 440
K
.011
.019
0 .28
5 .80
0 .48
6.20
L
0 .16
.050
0 .41
1.27
θ
0°
8°
0°
8°
R E CO M M E ND E D F O O TP R IN T
0 .72 (.02 8 )
8X
6 .46 ( .25 5 )
1 .78 (.07 0)
8X
1.27 ( .0 50 )
3X
Part Marking
6
www.irf.com
IRF7233
Tape and Reel
SO-8
T E R M IN A L N U M B E R 1
1 2 .3 ( .48 4 )
1 1 .7 ( .46 1 )
8 .1 ( .31 8 )
7 .9 ( .31 2 )
F E E D D IR E C T IO N
N O TES:
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1.
33 0.0 0
(1 2 .9 9 2 )
M AX .
1 4 .4 0 ( .5 66 )
1 2 .4 0 ( .4 88 )
N O TE S :
1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
7/99
www.irf.com
7