IRF IRF7754TRPBF

PD-96020A
IRF7754PbF
HEXFET® Power MOSFET
l
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Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Lead-Free
VDSS
RDS(on) max
ID
-12V
25mΩ@VGS = -4.5V
34mΩ@VGS = -2.5V
-5.4A
49mΩ@VGS = -1.8V
-3.9A
-4.6A
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
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6
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*
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6
6
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TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-12
-5.5
-4.4
-22
1
0.64
0.01
±8
-55 to +150
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
Max.
Units
125
°C/W
1
05/14/09
IRF7754PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-12
–––
–––
–––
–––
-0.4
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.008
–––
–––
–––
–––
–––
–––
–––
–––
–––
22
3.9
4.8
9.8
18
267
191
1984
618
385
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, I D = -1mA
25
VGS = -4.5V, ID = -5.4A ‚
mΩ VGS = -2.5V, ID = -4.6A ‚
34
49
VGS = -1.8V, ID = -3.9A ‚
-0.9
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -5.4A
-1.0
VDS = -9.6V, VGS = 0V
µA
-25
VDS = -9.6V, VGS = 0V, TJ = 70°C
-100
nA VGS = -8V
100
VGS = 8V
–––
ID = -5.4A
–––
nC
VDS = -6V
–––
VGS = -4.5V ‚
14.7
V
DD = -6V, VGS = -4.5V
ns
27
ID = -1.0A
401
RD = 6Ω
287
RG = 6Ω ‚
–––
VGS = 0V
–––
pF
VDS = -6V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-1.0
–––
–––
-22
–––
–––
–––
–––
39
27
-1.2
59
41
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.0A, VGS = 0V ‚
TJ = 25°C, IF = -1.0A
di/dt = -100A/µs ‚
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
ƒ When mounted on 1 inch square copper board, t < 10 sec.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7754PbF
100
VGS
TOP
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
10
1
-1.0V
0.1
10
1
-1.0V
0.1
0.01
1
10
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
100
0.1
100
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
TJ = 150° C
TJ = 25 ° C
1
V DS= -10V
20µs PULSE WIDTH
0.1
1.0
1.2
1.4
1.6
1.8
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
10
1
-VDS, Drain-to-Source Voltage (V)
2.0
2.0
ID = -5.5A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20 40 60 80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7754PbF
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
2800
2400
Coss = Cds + Cgd
Ciss
2000
1600
1200
Coss
800
Crss
400
-VGS , Gate-to-Source Voltage (V)
6
3200
10
4
3
2
1
0
100
0
5
15
20
25
30
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
10
QG , Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
10
TJ = 150 ° C
TJ = 25 ° C
1
10
1ms
10ms
0.1
0.2
TC = 25 °C
TJ = 150 °C
Single Pulse
V GS = 0 V
0.4
0.6
0.8
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
V DS=-9.6V
V DS=-6V
5
0
1
ID = -5.4A
1.0
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7754PbF
6.0
VDS
-ID , Drain Current (A)
5.0
VGS
D.U.T.
RG
4.0
RD
-
+
V DD
V GS
3.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
td(on)
tr
t d(off)
tf
VGS
0.0
25
50
75
100
125
TC , Case Temperature ( ° C)
150
10%
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
0.01
1
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
0.001
0.01
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
(
RDS(on), Drain-to -Source On ResistanceΩ)
0.070
0.060
0.050
0.040
I D = -5.5A
0.030
0.020
0.010
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
7.0
( )
RDS ( on ) , Drain-to-Source On Resistance Ω
IRF7754PbF
0.1
0.08
VGS = -1.8V
0.06
0.04
VGS = -2.5V
0.02
VGS = -4.5V
0
0.0
5.0
10.0
15.0
20.0
25.0
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
10 V
QGS
QGD
12V
.2µF
.3µF
D.U.T.
+VDS
VGS
-3mA
VG
IG
ID
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
6
Fig 14b. Gate Charge Test Circuit
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IRF7754PbF
1.0
300
200
ID = -250µA
Power (W)
-VGS(th) ( V )
0.8
0.6
100
0.4
0.2
0
-75
-50
-25
0
25
50
75
100
TJ , Temperature ( °C )
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
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125
150
0.0001
0.0010 0.0100
0.1000 1.0000 10.0000 100.0000
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRF7754PbF
TSSOP8 Package Outline
Dimensions are shown in milimeters (inches)
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF7754PbF
TSSOP8 Part Marking Information
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TSSOP-8 Tape and Reel Information
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/2009
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9