2N7224 IRFM150 SEME LAB MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 3.53 (0.139) Dia. 3.78 (0.149) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790) 20.32 (0.800) VDSS ID(cont) RDS(on) 1 2 3 100V 34A 0.070W FEATURES • REPETITIVE AVALANCHE RATING • ISOLATED AND HERMETICALLY SEALED • ALTERNATIVE TO TO-3 PACKAGE 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC 3.81 (0.150) BSC • SIMPLE DRIVE REQUIREMENTS • EASE OF PARALLELING TO–254AA – Package Pin 1 – Drain Pin 2 – Source Pin 3 – Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current (VGS = 10V , Tcase = 25°C) 34A ID Continuous Drain Current (VGS = 10V , Tcase = 100°C) 21A IDM Pulsed Drain Current 1 136A PD Power Dissipation @ Tcase = 25°C 150W 1.2W/°C Linear Derating Factor 2 150mJ EAS Single Pulse Avalanche Energy dv/dt Peak Diode Recovery 3 TJ , Tstg Operating and Storage Temperature Range RqJC Thermal Resistance Junction to Case 0.83°C/W RqJCS Thermal Resistance Case to Sink (Typical) 0.21°C/W RqJCA Thermal Resistance Junction-to-Ambient 5.5V/ns –55 to 150°C 48°C/W Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) @ VDD = 25V , L ³ 200mH , RG = 25W , Peak IL = 34A , Starting TJ = 25°C 3) @ ISD £ 34A , di/dt £ 70A/ms , VDD £ BVDSS , TJ £ 150°C , SUGGESTED RG = 2.35W Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website http://www.semelab.co.uk E-mail: [email protected] 2/99 2N7224 IRFM150 SEME LAB ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage VGS = 0 ID = 1mA Min. Typ. Max. 100 Reference to 25°C V 0.13 ID = 1mA V / °C Static Drain – Source On–State VGS = 10V ID = 21A 0.070 Resistance VGS = 10V ID = 34A 0.081 VGS(th) Gate Threshold Voltage VDS = VGS ID = 250mA 2 gfs Forward Transconductance VDS ³ 15V IDS = 21A 9 IDSS Zero Gate Voltage Drain Current VGS = 0 IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V –100 RDS(on) Unit W 4 V (W) S(W VDS = 0.8BVDSS 25 TJ = 125°C 250 mA nA DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 3700 Coss Output Capacitance VDS = 25V 1100 Crss Reverse Transfer Capacitance f = 1MHz 200 Qg Total Gate Charge Qgs Gate – Source Charge Qgd Gate – Drain (“Miller”) Charge td(on) Turn–On Delay Time tr Rise Time td(off) Turn–Off Delay Time tf Fall Time VGS = 10V ID = 34A pF 50 125 ID =34A 8 22 VDS = 0.5BVDS 15 65 VDS = 0.5BVDS nC nC 35 VDD = 50V 190 ID = 34A 170 RG = 2.35W ns 130 SOURCE – DRAIN DIODE CHARACTERISTICS IS 34 Continuous Source Current 2 ISM Pulse Source Current 136 VSD Diode Forward Voltage trr Reverse Recovery Time IF = 34A Qrr Reverse Recovery Charge di / dt £ 100A/ms VDD £ 50V ton Forward Turn–On Time LD PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) 8.7 LS Internal Source Inductance (from centre of source pad to end of source bond wire) 8.7 IS = 34A TJ = 25°C VGS = 0 TJ = 25°C A 1.8 V 500 ns 2.9 mC Negligible nH Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website http://www.semelab.co.uk E-mail: [email protected] 2/99