IRFY230 MECHANICAL DATA Dimensions in mm (inches) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420) N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) 12.07 (0.500) 19.05 (0.750) 1 2 3 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC 200V 9A Ω 0.40Ω FEATURES • HERMETICALLY SEALED TO–257AA METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS TO–257AA – Metal Package Pad 1 – Gate Pad 2 – Drain Pad 3 – Source • LIGHTWEIGHT • SCREENING OPTIONS AVAILABLE • ALL LEADS ISOLATED FROM CASE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) ±20V VGS Gate – Source Voltage ID Continuous Drain Current @ Tcase = 25°C 9A ID Continuous Drain Current @ Tcase = 100°C 6A IDM Pulsed Drain Current 36A PD Power Dissipation @ Tcase = 25°C 75W Linear Derating Factor TJ , Tstg Operating and Storage Temperature Range RθJC Thermal Resistance Junction to Case 0.6W/°C –55 to 150°C 1.67°C/W max.. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3279 Issue1 IRFY230 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ RDS(on) VGS = 0 ID = 1mA Min. Typ. Max. 200 Reference to 25°C V 0.29 V / °C Breakdown Voltage ID = 1mA Static Drain – Source On–State VGS = 10V ID = 6A 0.40 Resistance VGS = 10V ID = 9A 0.49 VDS = VGS ID = 250µA 2 VDS ≥ 15V IDS = 6A 3 VGS = 0 VDS = 0.8BVDSS 25 TJ = 125°C 250 VGS(th) Gate Threshold Voltage 4 gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V -100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 600 Coss Output Capacitance VDS = 25V 250 Crss Reverse Transfer Capacitance f = 1MHz 80 Qg Total Gate Charge Qgs Gate – Source Charge Qgd Gate – Drain (“Miller”) Charge td(on) Turn–On Delay Time tr Rise Time td(off) Turn–Off Delay Time tf Fall Time IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current 9 ISM Pulse Source Current 36 VSD Diode Forward Voltage trr Reverse Recovery Time IS = 9A Qrr Reverse Recovery Charge di / dt ≤ 100A/µs VDD ≤ 50V LD PACKAGE CHARACTERISTICS Internal Drain Inductance LS Internal Source Inductance VGS = 10V ID = 9A 39 ID = 9A 3 5.1 VDS = 0.5BVDSS 8 20 V (Ω) S(Ω µA nA nC nC 35 VDD = 100V 80 ID = 9A 60 RG = 7.5Ω IS = 9A Ω pF 16 VDS = 0.5BVDSS Unit ns 40 TJ = 25°C VGS = 0 TJ = 25°C (from 6mm down drain lead pad to centre of die) 8.7 (from 6mm down source lead to centre of source bond pad) 8.7 A 1.4 V 500 ns 6 µC nH Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3279 Issue1