PD - 9.1320B
IRLI3803
HEXFET® Power MOSFET
Logic-Level Gate Drive
Advanced Process Technology
l Ultra Low On-Resistance
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
Description
l
D
l
VDSS = 30V
RDS(on) = 0.006Ω
G
ID = 76A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max.
Continuous Drain Current, V GS @ 5.0V
Continuous Drain Current, V GS @ 5.0V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Current
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Units
76
54
470
63
0.42
±16
610
71
6.3
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Min.
Typ.
Max.
Units
––––
––––
––––
––––
2.4
65
°C/W
8/25/97
IRLI3803
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
I GSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
30
–––
–––
–––
1.0
55
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
V(BR)DSS
Typ.
–––
0.052
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
230
29
35
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.006
VGS = 10V, ID = 40A
Ω
0.009
VGS = 4.5V, ID = 34A
–––
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, I D = 71A
25
VDS = 30V, VGS = 0V
µA
250
VDS = 24V, VGS = 0V, T J = 150°C
100
VGS = 16V
nA
-100
VGS = -16V
140
ID = 71A
41
nC
VDS = 24V
78
VGS = 4.5V, See Fig. 6 and 13
–––
VDD = 15V
–––
ID = 71A
ns
–––
RG = 1.3Ω, VGS = 4.5V
–––
RD = 0.20Ω, See Fig. 10
Between lead,
4.5 –––
6mm (0.25in.)
nH
from package
7.5 –––
and center of die contact
5000 –––
VGS = 0V
1800 –––
pF
VDS = 25V
880 –––
ƒ = 1.0MHz, See Fig. 5
12 –––
ƒ = 1.0MHz
D
G
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
76
–––
–––
470
–––
–––
–––
–––
120
450
1.3
180
680
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 40A, VGS = 0V
TJ = 25°C, IF = 71A
di/dt = 100A/µs
D
G
S
Notes:
Repetitive rating; pulse width limited by
I SD ≤ 71A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS ,
t=60s, ƒ=60Hz
max. junction temperature. ( See fig. 11 )
TJ ≤ 175°C
VDD = 15V, starting TJ = 25°C, L = 180µH Pulse width ≤ 300µs; duty cycle ≤ 2%. Uses IRL3803 data and test conditions
RG = 25Ω, IAS = 71A. (See Figure 12)
IRLI3803
10000
10000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.0V
1000
ID , D ra in -to -S o u rce C u rre n t (A )
ID , D ra in -to -S o u rce C u rre n t (A )
1000
100
10
1
0.1
2.0 V
20 µ s PU LSE W ID TH
T J = 2 5°C
0.01
0.1
1
10
A
100
10
0.1
0.1
100
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
I D , D r ain- to-S ourc e C urre nt (A )
T J = 2 5 °C
TJ = 1 7 5 °C
10
1
0.1
V DS = 2 5 V
2 0µ s PU L SE W ID TH
4.0
5.0
6.0
7.0
8.0
V G S , G ate-to -S ource V olta ge (V )
10
A
100
Fig 2. Typical Output Characteristics
2.0
3.0
1
V D S , Drain-to-S ource Voltage (V )
1000
0.01
2 0µ s PU L SE W ID TH
T J = 1 75 °C
0.01
Fig 1. Typical Output Characteristics
100
2.0V
1
V D S , Drain-to-Source V oltage (V )
2.0
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.0V
TOP
TOP
9.0
A
I D = 12 0A
1.5
1.0
0.5
V G S = 10 V
0.0
-60 -40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T emperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRLI3803
8000
V GS
C iss
C rs s
C is s C os s
6000
C os s
=
=
=
=
15
0V ,
f = 1 MH z
C gs + C gd , C ds SH O R TED
C gd
C ds + C gd
V G S , G a te -to -S o u rce V o lta g e (V )
C , C a p a c ita n c e (p F )
10000
4000
C rs s
2000
0
10
V DS = 24 V
V DS = 15 V
12
9
6
3
FO R TEST CIR CU IT
SEE FIG UR E 13
0
A
1
I D = 71A
0
100
V D S , D rain-to-S ource Voltage (V )
80
120
160
A
200
Q G , T otal Gate C harge (nC )
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
1 0µs
I D , D ra in C u rre n t (A )
IS D , R e ve rs e D ra in C u rre n t (A )
40
TJ = 17 5°C
100
TJ = 2 5°C
1 00µs
100
1 ms
VG S = 0 V
10
0.4
0.8
1.2
1.6
2.0
2.4
2.8
V S D , Source-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
3.2
T C = 25 °C
T J = 17 5°C
S ing le Pulse
10
1
10 ms
10
V D S , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
A
100
IRLI3803
80
VDS
D.U.T.
RG
60
+
- VDD
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS
90%
0
25
50
75
100
125
TC , Case Temperature
150
175
( ° C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
10
Thermal Response (Z thJC )
ID , Drain Current (A)
VGS
RD
D = 0.50
1
0.20
0.10
PDM
0.05
0.1
t1
0.02
t2
0.01
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
IRLI3803
L
VDS
D.U.T.
RG
+
-
VDD
IAS
4.5 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
1500
ID
2 9A
50A
71 A
TO P
BO TTOM
1200
900
600
300
0
V D D = 1 5V
25
50
A
75
100
125
150
Starting TJ , Junction T emperature (°C)
VDS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
QG
.3µF
4.5 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
175
IRLI3803
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRLI3803
Package Outline
TO-220 FullPak Outline
Dimensions are shown in millimeters (inches)
10.60 (.41 7)
10.40 (.40 9)
ø
3.40 (.133 )
3.10 (.123 )
4.8 0 (.189)
4.6 0 (.181)
-A 3.70 (.145)
3.20 (.126)
16 .0 0 (.630)
15 .8 0 (.622)
2 .80 (.110)
2 .60 (.102)
LE AD A S SIGN M E N T S
1 - GA TE
2 - D R AIN
3 - SO U R C E
7 .10 (.280)
6 .70 (.263)
1.15 (.04 5)
M IN .
N O T ES :
1 D IM EN SION IN G & T O LER A N C IN G
PE R AN S I Y14.5 M , 1982
1
2
3
2 C O N TR OLLIN G D IM EN S ION : IN C H .
3.30 (.130 )
3.10 (.122 )
-B-
13 .7 0 (.540)
13 .5 0 (.530)
C
A
1.40 (.05 5)
3X
1.05 (.04 2)
0.9 0 (.035)
3X 0.7 0 (.028)
0.25 (.010 )
3X
M
A M
0.48 (.019)
0.44 (.017)
2.85 (.112 )
2.65 (.104 )
B
2 .54 (.100)
2X
D
B
M IN IM U M C R E EP AG E
D IST A NC E B ET W E EN
A-B -C -D = 4.80 (.189 )
Part Marking Information
TO-220 FullPak
E XAM PLE : T HIS IS A N IRF I840G
W ITH AS SE MBLY
LOT CODE E401
A
INT ER NAT IONA L
RE CTIF IER
PA RT NU MBE R
IRF I840G
LOGO
E 401 9 24 5
AS SE MBLY
LOT COD E
D ATE CODE
(YYW W )
YY = YE AR
W W = W E EK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97