PD - 9.1384B
IRLI2910
PRELIMINARY
HEXFET® Power MOSFET
Logic-Level Gate Drive
Advanced Process Technology
l Ultra Low On-Resistance
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
Description
l
D
l
VDSS = 100V
RDS(on) = 0.026Ω
G
ID = 31A
S
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
Fullpak is mounted to a heatsink using a single clip or by a
single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
Units
31
22
190
63
0.42
±16
520
29
6.3
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
2.4
65
°C/W
°C/W
3/16/98
IRLI2910
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
IGSS
Min. Typ. Max. Units
Conditions
100
––– –––
V
VGS = 0V, ID = 250µA
––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
–––
––– 0.026
VGS = 10V, ID = 16A
–––
––– 0.030
Ω
VGS = 5.0V, ID = 16A
–––
––– 0.040
VGS = 4.0V, ID = 14A
1.0
––– 2.0
V
VDS = VGS, ID = 250µA
28
––– –––
S
VDS = 50V, ID = 29A
–––
–––
25
VDS = 100V, VGS = 0V
µA
–––
––– 250
VDS = 80V, VGS = 0V, TJ = 150°C
–––
––– 100
VGS = 16V
nA
–––
––– -100
VGS = -16V
–––
––– 140
ID = 29A
–––
–––
20
nC
VDS = 80V
–––
–––
81
VGS = 5.0V, See Fig. 6 and 13
–––
11
–––
VDD = 50V
–––
100 –––
ID = 29A
ns
–––
49
–––
RG = 1.4Ω, VGS = 5.0V
–––
55
–––
RD = 1.7Ω, See Fig. 10
Between lead,
––– 4.5 –––
6mm (0.25in.)
nH
G
from package
––– 7.5 –––
and center of die contact
––– 3700 –––
VGS = 0V
–––
630 –––
VDS = 25V
pF
–––
330 –––
ƒ = 1.0MHz, See Fig. 5
–––
12
–––
ƒ = 1.0MHz
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
31
–––
–––
190
–––
–––
–––
–––
240
1.8
1.3
350
2.7
A
V
ns
µC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 16A, VGS = 0V
TJ = 25°C, IF = 29A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 1.2mH
RG = 25Ω, IAS = 29A. (See Figure 12)
ISD ≤ 29A, di/dt ≤ 490A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
t=60s, ƒ=60Hz
Uses IRL2910 data and test conditions
D
S
IRLI2910
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
2.5V
20µ s P U LS E W ID TH
T J = 25°C
1
0.1
1
10
A
100
10
R D S (on ) , D rain-to -S ource O n R esistance
(N orm alized)
I D , D ra in -to-S o urc e C urren t (A )
TJ = 2 5 °C
TJ = 1 7 5 °C
10
V DS = 50V
2 0 µ s P U L S E W ID T H
3.0
3.5
4.0
4.5
5.0
5.5
V G S , G a te -to -S o u rc e V o lta g e (V )
Fig 3. Typical Transfer Characteristics
10
A
100
Fig 2. Typical Output Characteristics
3.0
2.5
1
V D S , D rain-to-S ource V oltage (V )
1000
1
20µ s P U LS E W ID TH
T J = 175°C
0.1
Fig 1. Typical Output Characteristics
100
2.5V
1
100
V D S , D rain-to-S ource V oltage (V )
2.0
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
ID , D rain-to-S ource C urrent (A )
ID , D rain-to-S ource C urrent (A )
TOP
6.0
A
I D = 48A
2.5
2.0
1.5
1.0
0.5
V G S = 10V
0.0
-60 -40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
IRLI2910
15
V GS
C iss
C rss
C is s C oss
C , C apacitanc e (pF )
5000
=
=
=
=
0V ,
f = 1M H z
C gs + C gd , C ds S H O R TE D
C gd
C ds + C gd
V G S , G ate-to-S ource V oltage (V )
6000
4000
3000
C oss
2000
C rs s
1000
0
10
V D S = 80V
V D S = 50V
V D S = 20V
12
9
6
3
FO R TE S T C IR C U IT
S E E FIG U R E 1 3
0
A
1
I D = 29A
0
100
80
120
160
A
200
Q G , T otal G ate C harge (nC )
V D S , D rain-to-S ource V oltage (V )
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
O P E R A TIO N IN TH IS A R E A LIM ITE D
B Y R D S (on)
I D , D rain C urrent (A )
I S D , R everse D rain C urrent (A )
40
100
T J = 175°C
T J = 25°C
10µ s
100
100µ s
1m s
10
10m s
V G S = 0V
10
0.4
0.8
1.2
1.6
V S D , S ource-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.0
T C = 25°C
T J = 175°C
S ingle P ulse
1
1
A
10
100
V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating
Area
1000
IRLI2910
35
RD
VDS
I D , Drain Current (A)
30
VGS
D.U.T.
RG
25
+
-VDD
20
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
Fig 10a. Switching Time Test Circuit
10
VDS
5
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
P DM
0.05
0.1
t1
0.02
t2
0.01
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
IRLI2910
1 5V
L
VD S
D R IV E R
D .U .T
RG
+
V
- DD
IA S
20V
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test
Circuit
A
E A S , S ingle P ulse A valanc he E nergy (m J)
1400
TO P
1200
B O TTO M
ID
12A
20A
29 A
1000
800
600
400
200
0
V D D = 25V
25
V (B R )D S S
50
A
75
100
125
150
S tarting T J , Junction T em perature (°C )
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
5.0 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
175
IRLI2910
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
Period
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRLI2910
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
10.60 (.417)
10.40 (.409)
ø
3.40 (.133)
3.10 (.123)
4.80 (.189)
4.60 (.181)
-A3.70 (.145)
3.20 (.126)
16.00 (.630)
15.80 (.622)
2.80 (.110)
2.60 (.102)
LE A D A S S IG N ME N TS
1 - G A TE
2 - D R A IN
3 - SOURCE
7.10 (.280)
6.70 (.263)
1.15 (.045)
M IN .
NOTES:
1 D IME N S IO N IN G & TO LE R A N C IN G
P E R A N S I Y 14.5M , 1982
1
2
3
2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3.30 (.130)
3.10 (.122)
-B-
13.70 (.540)
13.50 (.530)
C
A
1.40 (.055)
3X
1.05 (.042)
0.90 (.035)
3X 0.70 (.028)
0.25 (.010)
3X
M
2.54 (.100)
2X
A M
B
0.48 (.019)
0.44 (.017)
2.85 (.112)
2.65 (.104)
D
B
M IN IM U M C R E E P A G E
D IS TA N C E B E TW E E N
A -B -C -D = 4.80 (.189)
Part Marking Information
TO-220 Fullpak
IS AISN AIRN F 1IR0F1I8
EXAE
MXPALM
E P: L ETH: IST HIS
0 40G
W ITH
W ITH
A S SAESMSBELMYB L Y
L O TL OCTO DCEO D9EB 1EM4 0 1
IN TE R N A T IO N A L
IN T E R N A T IO N A L
R E C TIF IE R
IRIRF F1 I8
0 1400 G
R E C T IF IE R
LOGO
9246
LOGO
9 BE 40 1 192M45
MLBYL Y
A SASSESME B
O ED E
L OLTO T C OC D
A
A
PART NUMBER
PART NUMBER
D A TE C O D E
(YDYAWT EW )C O D E
Y (Y
Y Y=W YWE)A R
WYWY == YE
W EAERK
W W = W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: 171 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-chome, Toshima-ku, Tokyo Japan Tel: 81 33 983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 16907 Tel: 65 221 8371
Data and specifications subject to change without notice.
3/98