PolarHVTM HiPerFET Power MOSFET VDSS = 600 V ID25 = 15 A Ω RDS(on) ≤ 250 mΩ ≤ 250 ns trr IXFC 30N60P IXFR 30N60P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM 80 A IAR TC = 25°C 30 A EAR TC = 25°C 50 mJ EAS TC = 25°C 1.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 3 Ω 10 V/ns PD TC = 25°C 166 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS, t = 1minute, leads-to-tab FC Mounting Force Weight ISOPLUS220 ISOPLUS247 (IXFC) (IXFR) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) N/lb N/lb 2 5 g g Characteristic Values Min. Typ. Max. 600 VGS(th) VDS = VGS, ID = 4 mA 3.0 IGSS VGS = ±30 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V TJ = 125°C VGS = 10 V, ID = 15 A Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved V~ 11..65 / 2.5..15 20..120 / 4.5..25 VGS = 0 V, ID = 250 μA RDS(on) G 2500 BVDSS ISOPLUS220TM (IXFC) E153432 V 5.0 V ±100 nA 25 500 μA μA 250 mΩ D Isolated back surface S ISOPLUS247TM (IXFR) E153432 Isolated back surface G = Gate S = Source D = Drain Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) Applications z DC-DC converters z z z z Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages z Easy assembly z z Space savings High power density DS99341E(03/06) IXFC 30N60P IXFR 30N60P Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 15 A, pulse test 15 27 S 3820 pF 360 pF Crss 28 pF td(on) 22 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = VDSS , ID = 15 A 20 ns td(off) RG = 3 Ω (External) 75 ns tf 25 ns Qg(on) 85 nC 26 nC 28 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 15 A Qgd ISOPLUS220 (IXFC) Outline Note: Bottom heatsink (Pin 4) is electrically isolated from Pin 1,2, or 3. 0.75 °C/W RthJC °C/W 0.21 RthCS Source-Drain Diode Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 30 A ISM Repetitive 80 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.5 V trr IF = 25A, -di/dt = 100 A/μs 200 ns IRM VR = 100 V; VGS = 0 V QRM 8 A 0.6 μC IXYS CO 0177 R0 ISOPLUS247 (IXFR) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFC 30N60P IXFR 30N60P Fig. 1. Output Char acte r is tics Fig. 2. Exte nde d Output Characte r is tics @ 25 º C @ 25 º C 30 60 V GS = 10V 27 24 8V 7V 50 45 21 6.5V 40 I D - Amperes I D - Amperes V GS = 10V 55 8V 7V 18 15 6V 12 9 5.5V 6 6.5V 35 30 25 6V 20 15 10 3 5V 5.5V 5 0 5V 0 0 1 2 3 4 5 6 7 8 0 V D S - V olts Fig. 3. Output Char acte ris tics 6 30 12 15 18 V D S - V olts 21 24 27 30 3.4 V GS = 10V 27 3.1 7V 21 R D S ( o n ) - Normalized 24 6V 18 5.5V 15 12 9 5V 6 3 V GS = 10V 2.8 2.5 2.2 I D = 30A 1.9 1.6 I D = 15A 1.3 1 0.7 4.5V 0 0.4 0 2 4 6 8 10 12 14 16 18 -50 -25 V D S - V olts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to Fig . 6. Dr ain Cu r r e n t vs . Cas e T e m p e r atu r e ID = 15A V alue vs . Dr ain Cur r e nt 16 3 2.8 V GS = 10V 2.6 14 TJ = 125 º C 12 2.4 I D - Amperes R D S ( o n ) - Normalized 9 Fig. 4. RDS(on ) Nor m alize d to ID = 15A V alue vs . Junction Te m pe r ature @ 125 º C I D - Amperes 3 2.2 2 1.8 1.6 1.4 10 8 6 4 1.2 TJ = 25 º C 2 1 0.8 0 0 5 10 15 20 25 30 35 I D - A mperes © 2006 IXYS All rights reserved 40 45 50 55 60 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFC 30N60P IXFR 30N60P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 35 50 45 30 40 - Siemens 15 TJ = 125 º C 10 25 º C 30 20 15 25 º C 10 -40 º C 5 125 º C 25 fs 20 TJ = -40 º C 35 g I D - Amperes 25 5 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 5 10 15 V G S - V olts Fig. 9. Sour ce Cur re nt vs . Sour ce -To-Drain V oltage 90 80 9 V DS = 300V 8 I D = 15A 7 I G = 10m A 70 60 V G S - Volts I S - Amperes 25 30 35 40 Fig. 10. Gate Charge 10 50 40 TJ = 125 º C 30 20 I D - A mperes 6 5 4 3 20 TJ = 25 º C 2 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 10 20 V S D - V olts 30 Q G 40 50 60 70 80 90 - nanoCoulombs Fig . 12. M axim u m T r an s ie n t T h e r m al Re s is tan ce Fig. 11. Capacitance 10000 1. 00 C iss R ( t h ) J C - ºC / W Capacitance - picoFarads f = 1MH z 1000 C oss 100 0. 10 C rs s 0. 01 10 0 5 10 15 20 25 30 35 40 V D S - V olts IXYS reserves the right to change limits, test conditions, and dimensions. 0. 1 1 10 100 Puls e Width - millis ec onds 1000