PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH IXFT IXFV IXFV VDSS ID25 20N80P 20N80P 20N80P 20N80PS RDS(on) trr Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 800 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25° C 20 A IDM TC = 25° C, pulse width limited by TJM 50 A IAR TC = 25° C 10 A EAR TC = 25° C 30 mJ E AS TC = 25° C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C 500 W -55 ... +150 150 -55 ... +150 °C °C °C TJ TJM Tstg TL TSOLD Maximum lead temperature for soldering Plastic case for 10 s Md Mounting torque (TO-247) FC Weight Mounting force (PLUS220) TO-247 TO-268 PLUS220 types °C °C 300 260 = 800 V = 20 A ≤ 520 m Ω ≤ 250 ns TO-247 (IXFH) (TAB) TO-268 (IXFT) G S D (TAB) PLUS220 (IXFV) G D D (TAB) S PLUS220 SMD(IXFV..S) 1.13/10 Nm/lb.in. 1..65 / 2.5..15 6 5.5 4 N/lb g g g G S G = Gate S = Source D (TAB) D = Drain Tab = Drain Features Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 4 mA IGSS IDSS RDS(on) Characteristic Values Min. Typ. Max. 800 3.0 V 5.0 V VGS = ± 30 VDC, VDS = 0 ± 200 nA VDS = VDSS VGS = 0 V 25 1000 µA µA TJ = 125° C VGS = 10 V, ID = 10 A Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved l l l l Advantages l l 520 mΩ International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect l Easy to mount Space savings High power density DS99511E(03/06) IXFH 20N80P IXFT 20N80P IXFV 20N80P IXFV 20N80PS Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 10 A, pulse test Ciss 14 23 S 4685 pF 356 pF C rss 26 pF td(on) 30 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A 24 ns td(off) RG = 2 Ω (External) 85 ns tf 24 ns Qg(on) 86 nC 27 nC 24 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A Qgd RthJC RthCS 0.25 (TO-247, PLUS220) Source-Drain Diode °C/W °C/W 0.21 Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 20 A ISM Repetitive 50 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = 25A, -di/dt = 100 A/µs 250 ns QRM VR = 100V; VGS = 0 V IRM 0.8 µC 6.0 A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFH 20N80P IXFT 20N80P IXFV 20N80P IXFV 20N80PS Fig. 1. Output Characte ris tics Fig. 2. Exte nde d Output Characte ris tics @ 25º C @ 25º C 20 36 V GS = 10V 18 16 7V 28 6V I D - Amperes 14 I D - Amperes V GS = 10V 32 7V 6V 12 10 8 6 5V 24 20 16 12 4 8 2 4 0 5V 0 0 2 4 6 8 10 12 0 3 6 9 Fig. 3. Output Characte ris tics 20 18 21 24 27 30 2.6 V GS = 10V 18 2.4 7V 14 12 6V 10 8 6 4 2 V GS = 10V 2.2 R D S ( o n ) - Normalized 16 I D - Amperes 15 Fig. 4. RDS(on ) Norm alize d to ID = 10A V alue vs . Junction Te m pe ratur e @ 125º C 2 1.8 1.6 I D = 20A 1.4 1.2 I D = 10A 1 0.8 0.6 5V 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 V D S - V olts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to Fig. 6. Dr ain Curr e nt vs . Cas e Te m pe r ature ID = 10A V alue vs . Drain Curre nt 2.6 22 2.4 20 V GS = 10V 18 TJ = 125 º C 2.2 16 2 I D - Amperes R D S ( o n ) - Normalized 12 V D S - V olts V D S - V olts 1.8 1.6 1.4 14 12 10 8 6 1.2 4 TJ = 25 º C 1 2 0.8 0 0 5 10 15 20 25 I D - A mperes © 2006 IXYS All rights reserved 30 35 40 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFH 20N80P IXFT 20N80P IXFV 20N80P IXFV 20N80PS Fig. 7. Input Adm ittance Fig. 8. Tr ans conductance 40 24 35 20 TJ = -40 º C - Siemens 16 TJ = 125 º C 12 25 º C 25 20 15 fs -40 º C 8 25 º C 125 º C g I D - Amperes 30 10 4 5 0 0 3.5 3.75 4 4.25 4.5 4.75 5 5.25 5.5 0 5.75 5 10 Fig. 9. Source Cur r e nt vs . Sour ce -To-Dr ain V oltage 20 25 Fig. 10. Gate Char ge 10 60 50 40 V G S - Volts I S - Amperes 15 I D - A mperes V G S - V olts 30 TJ = 125 º C 20 9 V DS = 400V 8 I D = 10A 7 I G = 10m A 6 5 4 3 TJ = 25 º C 2 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 10 20 30 V S D - V olts Q 40 50 60 70 80 90 - nanoCoulombs Fig. 12. M axim um Tr ans ie nt The rm al Re s is tance Fig. 11. Capacitance 1.00 10000 C is s R ( t h ) J C - ºC / W Capacitance - picoFarads G 1000 C os s 100 f = 1MH z C rs s 10 0 5 10 15 20 0.10 0.01 25 30 35 40 V D S - V olts IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 100 Pulse Width - milliseconds 1000 IXFH 20N80P IXFT 20N80P IXFV 20N80P IXFV 20N80PS Package Outline Drawings TO-247AD (IXFH) Outline 1 Dim. 2 TO-268 (IXFT) Outline 3 Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC PLUS220 (IXFV) Outline © 2006 IXYS All rights reserved PLUS220SMD (IXFV_S) Outline IXYS REF: F_20N80P (7J) 03-01-06-A.XLS