Advanced Technical Data HiPerFETTM Power MOSFETs IXFH14N100Q2 VDSS = = ID25 RDS(on) = N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 300 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings VGS VGSM Continuous Transient ID25 IDM IAR TO-247 AD (IXFH) 1000 1000 V V ±30 ±40 V V TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 14 56 14 A A A G = Gate S = Source EAR EAS TC = 25°C TC = 25°C 50 2.5 mJ J Features dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 20 V/ns PD TC = 25°C 500 W z -55 ... +150 150 -55 ... +150 °C °C °C z 300 °C TJ TJM Tstg (TAB) z z z z TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque 1.13/10 Nm/lb.in. 6 g z z z z Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2003 IXYS All rights reserved 1000 3.0 TJ = 25°C TJ = 125°C V 5.0 V ±200 nA 25 1 µA mA 0.90 TAB = Drain Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on), low Qg Avalanche energy and current rated Fast intrinsic rectifier Applications z Weight Symbol 1000 V 14 A 0.90 Ω DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers Advantages z z z Easy to mount Space savings High power density Ω DS99073(08/03) IXFH14N100Q2 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 10 14 S 2700 pF 300 pF 100 pF TO-247 AD (IXFH) Outline 1 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 12 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 10 ns td(off) RG = 2 Ω (External), 28 ns 12 ns 83 nC 20 nC 40 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCK 0.25 TO-247 Source-Drain Diode 0.25 Dim. K/W K/W 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 14 A ISM Repetitive; pulse width limited by TJM 56 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 300 ns µC A t rr QRM IRM 2 IF = IS, -di/dt = 100 A/µs, VR = 100 V 0.8 7 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXFH14N100Q2 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25 Deg. C @ 25 deg. C 27 14 VGS = 10V 12 7V 21 I D - Amperes 10 I D - Amperes VGS = 10V 8V 24 8 6V 6 4 18 7V 15 12 9 6V 6 2 3 5V 5V 0 0 0 2 4 6 8 10 12 0 14 5 10 Fig. 3. Output Characteristics 25 30 Junction Temperature 2.8 14 VG S = 10V 7V VG S = 10V 2.5 10 R D S (on) - Normalized 12 I D - Amperes 20 Fig. 4. RDS(on) Normalized to ID25 Value vs. @ 125 Deg. C 6V 8 6 4 5V 2 2.2 1.9 I D = 14A 1.6 1.3 I D = 7A 1 0.7 0 0.4 0 5 10 15 20 25 30 -50 -25 V DS - Volts 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to ID25 Value vs. ID 16 2.8 VG S = 10V 2.5 14 T J = 125º C 2.2 12 I D - Amperes R D S (on) - Normalized 15 V DS - Volts V DS - Volts 1.9 1.6 1.3 10 8 6 4 T J = 25º C 1 2 0.7 0 0 3 6 9 12 15 I D - Amperes © 2003 IXYS All rights reserved 18 21 24 27 -50 -25 0 25 50 75 100 TC - Degrees Centigrade IXFH14N100Q2 Fig. 8. Transconductance 21 28 18 24 15 20 g f s - Siemens I D - Amperes Fig. 7. Input Admittance 12 9 T J = 120º C 25º C 6 T J = -40º C 25º C 125º C 16 12 8 -40º C 3 4 0 0 4 4.5 5 5.5 6 6.5 7 0 3 6 9 V GS - Volts 18 21 24 Fig. 10. Gate Charge 42 10 35 VD S = 500V I D = 7A I G = 10mA 8 28 VG S - Volts I S - Amperes 15 I D - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 21 TJ = 125º C 14 TJ = 25º C 6 4 2 7 0 0 0.3 0.5 0.7 0.9 1.1 1.3 0 V SD - Volts 10 20 30 40 50 60 70 80 90 Q G - nanoCoulombs Fig. 12. Maximum Transient Thermal Resistance Fig. 11. Capacitance 1 10000 f = 1M Hz C iss R (th) J C - (ºC/W) Capacitance - pF 12 1000 C oss 100 0.1 C rss 10 0.01 0 5 10 15 20 25 30 35 40 V DS - Volts 1 10 100 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 1000