HiPerFETTM Power MOSFETs Q-Class IXFN 27N80Q VDSS ID25 RDS(on) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr D G Preliminary data sheet Symbol VDSS = 800 V = 27 A Ω = 320 mΩ S Test Conditions S Maximum Ratings TJ = 25°C to 150°C 800 miniBLOC, SOT-227 B (IXFN) E153432 S V G VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 27 A IDM TC = 25°C, pulse width limited by TJM 108 A 27 A 60 2.5 mJ J 5 V/ns 520 W -55 ... +150 °C Features TJM 150 °C Tstg -55 ... +150 °C • International standard package • Epoxy meet 2500 3000 V~ V~ IAR EAR EAS TC = 25°C TC = 25°C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ VISOL 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Md Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 Weight g S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • IXYS advanced low Qg process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications Symbol Test Conditions VDSS VGS = 0 V, ID = 250 µA VGH(th) V DS IGSS V GS = ±20 VDC, VDS = 0 IDSS V DS = VDSS V GS = 0 V RDS(on) V GS = 10 V, ID = 0.5 ID25 Note 1 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 = VGS, ID = 4 mA © 2001 IXYS All rights reserved 2.5 TJ = 25°C TJ = 125°C V 4.5 V ±100 nA 100 2 µA mA 0.32 Ω • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls Advantages • Easy to mount • Space savings • High power density 98813 (04/01) IXFN 27N80Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = 0.5 ID25, pulse test 20 27 S 7600 pF 750 pF Crss 120 pF td(on) 20 ns Ciss Coss V GS = 0 V, VDS = 25 V, f = 1 MHz tr V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 28 ns td(off) RG = 1 Ω (External), 50 ns 13 ns 170 tf Qg(on) Qgs V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd Test Conditions IS V GS = 0 V ISM Repetitive; pulse width limited by TJM VSD t rr Inches Min. Max. 1.240 0.307 1.255 0.323 nC C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 47 nC 65 nC E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 K/W J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 K/W L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 27 A 108 A IF = IS, VGS = 0 V, Note 1 1.5 V IF = IS, -di/dt = 100 A/µs, VR = 100 V 250 ns QRM 1.3 µC 8 A IRM Note 1: Millimeter Min. Max. 31.88 8.20 0.05 Symbol Dim. 31.50 7.80 0.24 Source-Drain Diode M4 screws (4x) supplied A B RthJC RthCK miniBLOC, SOT-227 B Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025