Advance Technical Information IXFN360N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 310A Ω 4.0mΩ 150ns RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 150 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C (Chip Capability) 310 A IL(RMS) IDM External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM 200 900 A A IA EAS TC = 25°C TC = 25°C 100 TBD A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns PD TC = 25°C 1070 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting Torque Terminal Connection Torque t = 1 minute t = 1 second Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 150 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 60A, Note 1 TJ = 150°C © 2009 IXYS CORPORATION, All Rights Reserved S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density Applications V 5.0 V ±200 nA 50 μA 5 mA 4.0 mΩ Synchronous Recification DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100180(08/09) IXFN360N15T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 140 230 S 47.5 nF 3060 pF 665 pF 50 ns 170 ns 115 ns 265 ns 715 nC 185 nC 200 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 1Ω (External) Qg(on) Qgs SOT-227B (IXFN) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 180A Qgd (M4 screws (4x) supplied) 0.14 °C/W RthJC RthCS 0.05 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 60A, VGS = 0V, Note 1 trr QRM IRM IF = 160A, VGS = 0V -di/dt = 100A/μs VR = 60V 360 A 1440 A 1.2 V 0.50 150 ns μC 9.00 A Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN360N15T2 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ T J = 25ºC @ T J = 25ºC 350 350 VGS = 15V 10V 8V 7V 300 300 250 250 200 ID - Amperes ID - Amperes VGS = 10V 7V 6V 6V 150 100 200 150 5V 100 50 50 5V 4V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 VDS - Volts Fig. 3. Output Characteristics 350 8 9 10 VGS = 10V 2.6 R DS(on) - Normalized ID - Amperes 7 3.0 VGS = 10V 8V 7V 250 6V 200 5V 150 100 4V 50 2.2 I D = 360A 1.8 I D = 180A 1.4 1.0 0.6 0 0.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 180A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 3.4 220 VGS = 10V 3.0 200 External Lead Current Limit 180 2.6 160 TJ = 175ºC ID - Amperes R DS(on) - Normalized 6 Fig. 4. RDS(on) Normalized to ID = 180A Value vs. Junction Temperature @ T J = 150ºC 300 5 VDS - Volts 2.2 1.8 1.4 140 120 100 80 60 TJ = 25ºC 40 1.0 20 0.6 0 0 50 100 150 200 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFN360N15T2 Fig. 7. Input Admittance Fig. 8. Transconductance 200 450 180 400 160 120 25ºC g f s - Siemens ID - Amperes 350 TJ = 150ºC 25ºC - 40ºC 140 TJ = - 40ºC 100 80 60 300 250 150ºC 200 150 40 100 20 50 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 220 Fig. 10. Gate Charge 10 350 VDS = 75V 9 300 I D = 180A 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 100 ID - Amperes 200 150 6 5 4 TJ = 150ºC 3 100 TJ = 25ºC 2 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 100 200 300 VSD - Volts 400 500 600 700 800 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1,000.0 RDS(on) Limit 25µs 100.0 100µs External Lead Limit 10,000 ID - Amperes Capacitance - PicoFarads Ciss Coss 10.0 1ms 1,000 10ms 1.0 TJ = 175ºC Crss 100ms TC = 25ºC f = 1 MHz DC Single Pulse 0.1 100 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 1,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_360N15T2 (9V)08-19-09 IXFN360N15T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 300 340 RG = 1Ω , VGS = 10V 260 260 I D t r - Nanoseconds t r - Nanoseconds RG = 1Ω , VGS = 10V VDS = 75V 300 = 100A 220 180 I 140 D = 200A VDS = 75V 220 TJ = 25ºC 180 TJ = 125ºC 140 100 60 100 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade 700 150 400 120 300 90 60 I D = 100A 100 0 3 4 5 6 7 8 9 180 400 160 I D = 200A 120 100 100 25 10 35 45 RG = 1Ω, VGS = 10V 900 220 800 200 180 TJ = 125ºC 95 105 115 80 125 160 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 180 800 VDS = 75V 700 700 600 600 I D = 200A, 100A 300 300 120 200 200 100 200 100 TJ = 25ºC 140 td(off) - - - - 400 140 0 tf TJ = 125ºC, VGS = 10V 400 200 100 900 500 160 120 85 500 300 100 75 100 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds VDS = 75V 500 240 t d(off) - Nanoseconds t f - Nanoseconds 600 td(off) - - - - t f - Nanoseconds tf 80 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 700 60 55 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 40 140 200 RG - Ohms 400 I D = 100A 300 0 0 2 200 RG = 1Ω, VGS = 10V 500 30 1 td(off) - - - - t d(off) - Nanoseconds I D = 200A 200 200 VDS = 75V t f - Nanoseconds VDS = 75V 180 220 tf 600 180 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGS = 10V 500 160 700 210 600 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 120 ID - Amperes IXFN360N15T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximium Transient Thermal Impedance .sadgsfgsf 0.200 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_360N15T2 (9V)08-19-09