HiPerFETTM Power MOSFETs VDSS IXFN44N50U2 IXFN44N50U3 500 V IXFN48N50U2 IXFN48N50U3 500 V Buck & Boost Configurations for PFC & Motor Control Circuits ID (cont) RDS(on) trr 0.12 W 35 ns 0.10 W 35 ns 44 A 48 A 3 3 4 2 2 Preliminary data 4 1 1 HiPerFET MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 44N50 48N50 44 48 A A IDM TC = 25°C, pulse width limited by max. TJM 44N50 48N50 176 192 A A DIODE 1 2 4 IAR TC = 25°C 24 A EAR Repetitive 30 mJ dv/dt IS £ IDM, -di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 520 W 600 V 60 A VRRM IFAVM TC = 70°C; rectangular, d = 0.5 IFRM tp <10 ms; pulse width limited by TJ 800 A PD TC = 25°C 180 W -40 ... +150 150 -40 ... +150 °C °C °C 2500 3000 V~ V~ TJ TJM Tstg CASE miniBLOC, SOT-227 B VISOL 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Md Mounting torque Terminal connection torque (M4) Weight IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g 3 Features · Popular Buck & Boost circuit topologies · International standard package miniBLOC SOT-227B · Aluminium nitride isolation - high power dissipation · Isolation voltage 3000 V~ · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Low drain-to-case capacitance (<60 pF) - reduced RFI · Ultra-fast FRED diode with soft reverse recovery Applications · Power factor controls and buck regulators · DC servo and robotic drives · DC choppers · Switch reluctance motor controls Advantages · Easy to mount with 2 screws · Space savings · Tightly coupled FRED 96535B (7/00) 1-5 IXFN44N50U2 IXFN44N50U3 Symbol Test Conditions VDSS VGS = 0 V, ID = 1 mA 500 VGS(th) VDS = VGS, ID = 8 mA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Symbol gfs Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V ±200 nA TJ = 25°C TJ = 125°C 400 2 mA mA 44N50 48N50 Pulse test, t £ 300 ms, duty cycle d £ 2 % 0.12 0.10 W W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDS = 10 V, ID = 0.5 ID25, pulse test 22 miniBLOC, SOT-227 B V 4 Test Conditions IXFN48N50U2 IXFN48N50U3 M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 42 S J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 8400 pF L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 900 pF N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 C rss 280 pF P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 td(on) 30 ns R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 60 ns T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 100 ns 30 ns 270 nC 60 nC Qgd 135 nC RthJC 0.24 K/W RthCK 0.05 K/W C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 td(off) RG = 1 W (External) tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Ultra-fast Diode Symbol IR Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 mA 100 mA TJ= 125°C; VR= 0.8VRRM 14 mA IF = 70A, VGS = 0 V, TJ= 150°C 1.5 V 1.8 V 35 50 ns 19 21 A TJ= 25°C; VR= VRRM VR= 0.8VRRM VF Pulse test, t £ 300 ms, duty cycle d £ 2 % t rr IRM TJ= 25°C II = 1A, di/dt = -200 A/ms, VR = 30 V, TJ = 25°C IF= 60A, di/dt = -480 A/ms, VR = 350 V, TJ = 100°C RthJC RthJK © 2000 IXYS All rights reserved 0.05 0.7 K/W K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-5 IXFN44N50U2 IXFN44N50U3 Fig.1 Output Characteristics 100 100 90 6V 80 80 70 70 ID - Amperes ID - Amperes Fig.2 Input Admittance 7V VGS = 10V TJ = 25°C 90 60 50 40 5V 30 TJ = 25°C 60 50 40 30 20 20 10 10 0 0 0 5 10 15 20 25 30 35 0 1 2 3 VDS - Volts 5 6 7 8 9 10 Fig.4 Temperature Dependence of Drain to Source Resistance 1.6 2.50 TJ = 25°C 2.25 1.4 1.3 VGS = 10V 1.2 VGS = 15V 1.1 RDS(on) - Normalized 1.5 RDS(on) - Normalized 4 VGS - Volts Fig.3 RDS(on) vs. Drain Current 1.0 2.00 1.75 ID = 24A 1.50 1.25 1.00 0.75 0.9 0 0.50 -50 10 20 30 40 50 60 70 80 90 100 -25 0 ID - Amperes 1.2 48N50 44N50 30 20 10 0 -50 75 100 125 150 VGS(th) BVDSS 1.1 BV/VG(th) - Normalized 40 50 Fig.6 Temperature Dependence of Breakdown and Threshold Voltage 60 50 25 TJ - Degrees C Fig.5 Drain Current vs. Case Temperature ID - Amperes IXFN48N50U2 IXFN48N50U3 1.0 0.9 0.8 0.7 0.6 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-5 IXFN44N50U2 IXFN44N50U3 Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves 10 10000 VDS = 250V 9 9000 ID = 24A 6 5 4 3 7000 5000 4000 3000 2000 1 1000 0 0 50 f = 1 MHz VDS = 25V 6000 2 0 Ciss 8000 Capacitance - pF 8 I = 10mA G 7 VGE - Volts IXFN48N50U2 IXFN48N50U3 100 150 200 250 300 350 400 Coss Crss 0 5 Gate Charge - nCoulombs 10 15 20 25 VDS - Volts Fig.9 Source Current vs. Source to Drain Voltage 100 90 ID - Amperes 80 70 60 50 TJ = 125°C 40 30 TJ = 25°C 20 10 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 VSD - Volt Thermal Response - K/W Fig.10 Transient Thermal Impedance 0.1 0.01 0.001 0.01 0.1 1 Time - Seconds © 2000 IXYS All rights reserved 4-5 IXFN44N50U2 IXFN44N50U3 IXFN48N50U2 IXFN48N50U3 Fig. 11. Forward voltage drop. Fig. 12. Recovery charge versus -diF/dt. Fig. 13. Peak reverse current vs. -diF/dt. Fig. 14. Dynamic parameters versus junction temperature. Fig. 15. Recovery time versus -diF/dt. Fig. 16. Peak forward voltage and forward recovery time vs. diF/dt. Fig. 17. Transient thermal impedance junction to case. © 2000 IXYS All rights reserved 5-5