Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr £ 200 ns RDS(on) 1.05 W 1.20 W N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM TC = 25°C, Pulse width limited by TJM IAR TC = 25°C EAR TC = 25°C dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W PD TC = 25°C 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS V V ±20 ±30 V V 10 9 48 40 12 10 A A A A A A 30 mJ 5 V/ns 250 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 V~ 5 g 12N100 10N100 12N100 10N100 12N100 10N100 TJ TJM Tstg TL 1000 1000 t = 1 min Weight ISOPLUS 247TM G D G = Gate S = Source Isolated back surface* D = Drain * Patent pending Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<50pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V TJ = 25°C TJ = 125°C RDS(on) VGS = 10 V, ID = IT Notes 1 & 2 12N100 10N100 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 5.5 V ±100 nA 50 1 mA mA 1.05 1.2 W W • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control Advantages • Easy assembly • Space savings • High power density 98589 (1/99) 1-2 IXFR 10N100Q IXFR 12N100Q Symbol Test Conditions gfs VDS = 15 V; ID = IT Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 4 10 S 2900 pF 315 pF 50 pF 20 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 23 ns td(off) RG = 1 W (External), 40 ns tf 15 ns Qg(on) 90 nC 30 nC 40 nC Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Qgd RthJC 0.50 RthCK 0.15 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 12 A ISM Repetitive; pulse width limited by TJM 48 A VSD IF = IS, VGS = 0 V, Note 1 1.3 V t rr QRM IF = Is, -di/dt = 100 A/ms, VR = 100 V IRM 200 ns 1.6 mC 7 A ISOPLUS 247 (IXFR) OUTLINE 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 % IXFR10N100 IT = 5A 2. IT test current: IXFR12N100 IT = 6A © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2