HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C IXGX 12N90C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms 48 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load ICM = 24 @ 0.8 VCES A PC TC = 25°C 100 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque with screw M3 Mounting torque with screw M3.5 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s °C 300 6 g = = = = 900 24 3.0 70 V A V ns TO-247 (IXGH) C (TAB) G C E PLUS 247 (IXGX) G (TAB) D G = Gate, E = Emitter, C = Collector, TAB = Collector Features z Weight VCES IC25 VCES(sat) tfi(typ) z z z Very high frequency IGBT New generation HDMOSTM process International standard package High peak current handling capability Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 250 µA, VGE = 0 V 900 VGE(th) IC = 250 µA, VGE = VGE 2.5 ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V TJ = 25°C TJ = 125°C V z z z z 5.0 V 100 1.5 µA mA Advantages ±100 nA z z z VCE(sat) IC = ICE90, VGE = 15 V © 2003 IXYS All rights reserved PFC circuit AC motor speed control DC servo and robot drives Switch-mode and resonant-mode power supplies High power audio amplifiers 3.0 V Fast switching speed High power density 98582B(03/03) IXGH 12N90C IXGX 12N90C Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 5 Cies 10 S ∅P 780 pF 60 pF Cres 15 pF Qg 33 nC 10 nC 12 nC 20 ns Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz e IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°°C tri IC = IC90, VGE = 15 V VCE = 0.8 • VCES, RG = Roff = 22 Ω td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V VCE = 0.8 • VCES, RG = Roff = 22 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 20 ns 135 200 ns 70 180 ns 0.32 0.70 mJ 20 ns 20 ns 0.15 mJ 200 ns 150 ns 0.70 mJ RthJC RthCK TO-247 Outline 1.25 TO-247 PLUS 247 0.25 0.15 Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC PLUS 247 Outline K/W K/W K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGH 12N90C IXGX 12N90C Fig. 1. Saturation Voltage Characteristics @ 25oC Fig. 2. Extended Output Characteristics 100 50 TJ = 25OC 75 VGE = 15V 13V 11V 30 IC - Amperes IC - Amperes 40 9V 20 TJ = 25oC 13V VGE = 15V 11V 9V 50 7V 25 10 5V 7V 0 0 0 2 4 6 8 10 0 5 Fig. 3. Saturation Voltage Characteristics @ 125oC 50 Fig. 4. Temperature Dependence of VCE(SAT) 1.6 TJ = 125OC VGE = 15V VCE (SAT) - Normalized IC - Amperes 40 VGE = 15V 13V 11V 30 9V 20 7V 10 1.4 IC = 24A 1.2 IC = 12A 1.0 IC = 6A 5V 0 2 4 6 8 0.8 10 -25 0 25 VCE - Volts 75 100 125 150 Fig. 6. Capacitance Curves 1000 Ciss Capacitance - pF IC - Amperes 50 T J - Degrees C Fig. 5. Admittance Curves 60 55 50 45 40 35 30 25 20 15 10 5 0 15 VCE - Volts VCE - Volts 0 10 TJ = 125oC TJ = 25oC Coss 100 Crss o TJ = -40 C 4 5 6 7 8 VGE - Volts © 2003 IXYS All rights reserved 9 10 11 12 10 0 5 10 15 20 25 VCE - Volts 30 35 40 IXGH 12N90C IXGX 12N90C Fig. 8. Dependence of EOFF on RG Fig. 7. Dependence of EOFF on IC 3.0 2.0 TJ = 125°C TJ = 125°C 2.5 E(OFF) - millijoules E(OFF) - millijoules RG = 10Ω 1.5 E(OFF) 1.0 0.5 2.0 1.5 IC = 12A E(OFF) 1.0 E(OFF) IC = 6A 0.5 0.0 0.0 5 10 15 20 0 25 10 20 30 40 50 60 RG - Ohms IC - Amperes Fig. 9. Gate Charge Fig. 10. Turn-off Safe Operating Area 100 16 IC = 12A VCE = 450V 14 24 IC - Amperes 12 VGE - Volts E(OFF) IC = 24A 10 8 6 10 TJ = -55 to +125°C RG = 10Ω dV/dt < 5V/ns 1 4 2 0 0.1 0 10 20 30 40 0 200 Qg - nanocoulombs 400 600 800 1000 VCE - Volts Fig. 11. Transient Thermal Resistance ZthJC (K/W) 10 1 Single pulse 0.1 0.01 0.001 0.01 0.1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343