IXYS IXTQ250N075T

Preliminary Technical Information
IXTH250N075T
IXTQ250N075T
TrenchMVTM
Power MOSFET
VDSS
ID25
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
= 75
V
= 250
A
Ω
≤ 4.0 mΩ
TO-247 (IXTH)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
VGSM
75
75
V
V
Transient
± 20
V
ID25
ILRMS
IDM
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
250
75
560
A
A
A
IAR
EAS
TC = 25° C
TC = 25° C
40
1.5
A
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤175° C, RG = 3.3 Ω
3
V/ns
PD
TC = 25° C
550
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
TJ
TJM
Tstg
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Md
Mounting torque
Weight
TO-3P
TO-247
1.13 / 10 Nm/lb.in.
5.5
6
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
g
g
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 250 µA
75
VGS(th)
VDS = VGS, ID = 250 µA
2.0
IGSS
VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 50 A, Notes 1, 2
V
TJ = 150° C
3.3
4.0
V
± 200
nA
5
250
µA
µA
4.0
mΩ
G
D
(TAB)
S
TO-3P (IXTQ)
G
D
(TAB)
S
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
DS99637(11/06)
© 2006 IXYS CORPORATION All rights reserved
IXTH250N075T
IXTQ250N075T
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C unless otherwise specified)
gfs
VDS= 10 V; ID = 60 A, Note 1
Typ.
75
122
S
9900
pF
Ciss
Coss
TO-247AD Outline
Min.
VGS = 0 V, VDS = 25 V, f = 1 MHz
Max.
1330
pF
285
pF
32
ns
C rss
td(on)
Resistive Switching Times
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 50 A
50
ns
td(off)
RG = 3.3 Ω (External)
58
ns
45
ns
200
nC
50
nC
60
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
Qgd
1
RthCH
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Source-Drain Diode
Symbol
Test Conditions
TJ = 25° C unless otherwise specified)
Min.
Characteristic Values
Typ.
Max.
IS
VGS = 0 V
250
A
ISM
Pulse width limited by TJM
560
A
VSD
IF = 50 A, VGS = 0 V, Note 1
1.0
V
t rr
IF = 50 A, -di/dt = 100 A/µs
80
ns
2 - Drain
Tab - Drain
Dim.
°C/W
0.25
3
Terminals: 1 - Gate
3 - Source
0.27 °C/W
RthJC
2
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-3P (IXTQ) Outline
VR = 25 V, VGS = 0 V
Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
7,005,734 B2
7,063,975 B2
7,071,537
IXTH250N075T
IXTQ250N075T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
250
350
VGS = 10V
9V
8V
225
200
7V
150
250
I D - Amperes
175
I D - Amperes
VGS = 10V
9V
8V
300
6V
125
100
75
7V
200
6V
150
100
50
5V
50
5V
25
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
1
0.5
1
1.5
VDS - Volts
250
3
3.5
4
2.4
VGS = 10V
9V
8V
225
200
VGS = 10V
2.2
2.0
RDS(on) - Normalized
7V
175
I D - Amperes
2.5
Fig. 4. RDS(on) Normalized to ID = 125A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
150
6V
125
100
75
5V
50
1.8
I D = 250A
1.6
I D = 125A
1.4
1.2
1.0
0.8
25
0
0.6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 125A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
2.6
90
TJ = 175ºC
2.4
External Lead Current Limit
80
2.2
70
2
I D - Amperes
RDS(on) - Normalized
2
VDS - Volts
VGS = 10V
15V - - - -
1.8
1.6
1.4
60
50
40
30
1.2
20
TJ = 25ºC
10
1
0
0.8
0
50
100
150
200
250
I D - Amperes
© 2006 IXYS CORPORATION All rights reserved
300
350
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
175
IXTH250N075T
IXTQ250N075T
Fig. 8. Transconductance
Fig. 7. Input Admittance
250
180
225
160
200
140
g f s - Siemens
ID - Amperes
175
150
125
TJ = 150ºC
25ºC
-40ºC
100
TJ = - 40ºC
25ºC
120
100
150ºC
80
60
75
40
50
20
25
0
0
3
3.5
4
4.5
5
5.5
6
0
6.5
25
50
75
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
125
150
175
200
225
250
160
180
200
Fig. 10. Gate Charge
300
10
VDS = 37.5V
9
250
I D = 25A
8
I G = 10mA
7
200
150
VGS - Volts
IS - Amperes
100
I D - Amperes
TJ = 150ºC
100
TJ = 25ºC
6
5
4
3
2
50
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
1.3
20
40
60
80
100
120
140
QG - NanoCoulombs
VSD - Volts
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
1.00
C iss
10,000
Z(th)JC - ºC / W
Capacitance - PicoFarads
f = 1 MHz
C oss
1,000
0.10
C rss
100
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
0.01
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
IXTH250N075T
IXTQ250N075T
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
55
50
RG = 3.3Ω
47
VGS = 10V
50
TJ = 25ºC
VDS = 37.5V
44
t r - Nanoseconds
t r - Nanoseconds
53
41
38
35
32
I D = 50A
45
40
RG = 3.3Ω
VGS = 10V
35
VDS = 37.5V
30
29
TJ = 125ºC
I D = 25A
26
25
23
20
20
25
35
45
55
65
75
85
95
105
115
24
125
26
28
30
32
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
td(on) - - - -
80
TJ = 125ºC, VGS = 10V
70
120
65
100
60
80
55
60
50
40
t f - Nanoseconds
75
I D = 50A, 25A
140
45
20
40
0
35
2
4
6
8
10
12
14
16
18
td(off) - - - -
98
RG = 3.3Ω, VGS = 10V
94
50
VDS = 37.5V
90
49
86
48
82
47
74
45
70
44
VDS = 37.5V
62
42
58
41
54
95
220
90
200
35
45
55
65
75
85
95
105 115
50
125
48
80
46
75
44
70
65
390
td(off) - - - -
tf
360
TJ = 125ºC, VGS = 10V
330
VDS = 37.5V
180
300
I D = 25A
160
270
140
240
I D = 50A
120
210
100
180
80
150
40
60
60
120
38
55
40
90
50
20
36
38 40 42 44 46 48 50
I D - Amperes
© 2006 IXYS CORPORATION All rights reserved
t d ( o f f ) - Nanoseconds
85
TJ = 25ºC, 125ºC
66
I D = 50A
43
240
t f - Nanoseconds
RG = 3.3Ω, VGS = 10V
78
I D = 25A
46
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
100
td(off) - - - -
24 26 28 30 32 34 36
50
TJ - Degrees Centigrade
t d ( o f f ) - Nanoseconds
t f - Nanoseconds
48
tf
25
50
42
46
51
40
20
56
52
44
102
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
54
42
52
RG - Ohms
tf
40
t d ( o f f ) - Nanoseconds
VDS = 37.5V
t d ( o n ) - Nanoseconds
t r - Nanoseconds
160
38
53
85
180
36
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
200
tr
34
I D - Amperes
60
2
4
6
8
10
12
14
16
18
20
RG - Ohms
IXYS REF: T_250N075T (6V) 8-31-08-A.xls