2N3439 thru 2N3440 Qualified Levels: JAN, JANTX, JANTXV and JANS NPN LOW POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-39 and low profile U4 and UA packaging. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N3439 through 2N3440 series. • JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/368. • RoHS compliant versions available (commercial grade only). • V CE(sat) = 0.5 V @ I C = 50 mA. • Turn-On time t on = 1.0 µs max @ I C = 20 mA, I B1 = 2.0 mA. • Turn-Off time t off = 10 µs max @ I C = 20 mA, I B1 = -I B2 = 2.0 mA. TO-39 (TO-205AD) Package Also available in: TO-5 package (long leaded) 2N3439L – 2N3440L APPLICATIONS / BENEFITS • • General purpose transistors for medium power applications requiring high frequency switching and low package profile. Military and other high-reliability applications. U4 package (surface mount) 2N3439U4 – 2N3440U4 UA package (surface mount) 2N3439UA - 2N3440UA MAXIMUM RATINGS (T C = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N3439 2N3440 Unit Collector-Emitter Voltage V CEO 350 250 V Collector-Base Voltage V CBO 450 300 V Emitter-Base Voltage V EBO 7.0 V IC 1.0 A PD 0.8 5.0 W TJ , Tstg -65 to +200 °C Collector Current Total Power Dissipation (1) @ TA = +25°C (2) @ TC = +25°C Operating & Storage Junction Temperature Range Notes: 1. Derate linearly @ 4.57mW/°C for TA > +25°C. 2. Derate linearly @ 28.5mW/°C for TC > +25°C MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com LDS-0022, Rev. 4 (111683) ©2011 Microsemi Corporation Page 1 of 6 2N3439 thru 2N3440 MECHANICAL and PACKAGING • • • • • • CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Tin/lead solder dip or RoHS compliant pure tin (commercial grade only) plate over gold. MARKING: Part number, date code, manufacturer’s ID. POLARITY: NPN (see package outline). WEIGHT: Approximately 1.064 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3439 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS Level Blank = Commercial RoHS Compliance (available on commercial grade only) e3 = RoHS compliant with pure tin plate e4 = RoHS compliant with gold plate Blank = non-RoHS compliant JEDEC type number (see Electrical Characteristics table) Symbol C obo I CEO I CEX I EBO h FE V CEO V CBO V EBO SYMBOLS & DEFINITIONS Definition Common-base open-circuit output capacitance. Collector cutoff current, base open. Collector cutoff current, circuit between base and emitter. Emitter cutoff current, collector open. Common-emitter static forward current transfer ratio. Collector-emitter voltage, base open. Collector-emitter voltage, emitter open. Emitter-base voltage, collector open. LDS-0022, Rev. 4 (111683) ©2011 Microsemi Corporation Page 2 of 6 2N3439 thru 2N3440 ELECTRICAL CHARACTERISTICS (T A = +25°C, unless otherwise noted) OFF CHARACTERISTICS Parameters / Test Conditions Collector-Emitter Breakdown Voltage I C = 10 mA R BB1 = 470 Ω; V BB1 = 6 V L = 25 mH (min); f = 30 – 60 Hz Collector-Emitter Cutoff Current V CE = 300 V V CE = 200 V Emitter-Base Cutoff Current V EB = 7.0 V Collector-Emitter Cutoff Current V CE = 450 V, V BE = -1.5 V V CE = 300 V, V BE = -1.5 V Collector-Base Cutoff Current V CB = 360 V V CB = 250 V V CB = 450 V V CB = 300 V Symbol Min. 2N3439 2N3440 V (BR)CEO 350 250 2N3439 2N3440 I CEO 2.0 2.0 µA I EBO 10 µA I CEX 5.0 5.0 µA 2N3439 2N3440 2N3439 2N3440 2N3439 2N3440 Max. V 2.0 2.0 5.0 5.0 I CBO Unit µA ON CHARACTERISTICS (1) Parameters / Test Conditions Symbol Min. Max. 40 30 10 160 Unit Forward-Current Transfer Ratio I C = 20 mA, V CE = 10 V I C = 2.0 mA, V CE = 10 V I C = 0.2 mA, V CE = 10 V Collector-Emitter Saturation Voltage I C = 50 mA, I B = 4.0 mA V CE(sat) 0.5 V Base-Emitter Saturation Voltage I C = 50 mA, I B = 4.0 mA V BE(sat) 1.3 V DYNAMIC CHARACTERISTICS Parameters / Test Conditions Unit h FE Symbol Min. Max. Magnitude of Common Emitter Small-Signal ShortCircuit Forward Current Transfer Ratio I C = 10 mA, V CE = 10 V, f = 5.0 MHz |h fe | 3.0 15 Forward Current Transfer Ratio I C = 5.0 mA, V CE = 10 V, f = 1.0 kHz h fe 25 Output Capacitance V CB = 10 V, I E = 0, 100 kHz ≤ f ≤ 1.0 MHz C obo 10 pF Input Capacitance V CB = 5.0 V, I E = 0, 100 kHz ≤ f ≤ 1.0 MHz C ibo 75 pF (1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%. LDS-0022, Rev. 4 (111683) ©2011 Microsemi Corporation Page 3 of 6 2N3439 thru 2N3440 ELECTRICAL CHARACTERISTICS (T A = +25°C, unless otherwise noted) continued SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time V CC = 200 V; I C = 20 mA, I B1 = 2.0 mA t on 1.0 µs Turn-Off Time V CC = 200 V; I C = 20 mA, I B1 = -I B2 = 2.0 mA t off 10 µs IC – Collector Current (mA) SAFE OPERATING AREA (See graph below and also reference test method 3053 of MIL-STD-750.) DC Tests T C = +25 °C, 1 Cycle, t = 1.0 s Test 1 V CE = 5.0 V, I C = 1.0 A Both Types Test 2 V CE = 350 V, I C = 14 mA 2N3439 Test 3 V CE = 250 V, I C = 20 mA 2N3440 V CE – Collector to Emitter Voltage (V) Maximum Safe Operating graph (continuous dc) LDS-0022, Rev. 4 (111683) ©2011 Microsemi Corporation Page 4 of 6 2N3439 thru 2N3440 DC Operation Maximum Rating (W) GRAPHS o TC ( C) (Case) FIGURE 1 Temperature-Power Derating Curve o THETA (oC/W) NOTES: Thermal Resistance Junction to Case = 30.0 C/W Max Finish-Alloy Temp = 175.0 oC 10-5 .1 10-4 .1 10-3 .1 10-2 .1 10-1 .1 TIME (s) 0.1 1 10 100 FIGURE 2 Maximum Thermal Impedance NOTE: T C = +25 °C, P T = 5.0 W, thermal resistance R θJC = 30 °C/W, steel. LDS-0022, Rev. 4 (111683) ©2011 Microsemi Corporation Page 5 of 6 2N3439 thru 2N3440 PACKAGE DIMENSIONS Symbol CD CH HD LC LD LL LU Dimensions Inches Millimeters Min Max Min Max .305 .335 7.75 8.51 .240 .260 6.10 6.60 .335 .370 8.51 9.40 .200 TP 5.08 TP .016 .019 0.41 0.48 See note 14 .016 .019 0.41 0.48 L1 .050 1.27 Note 6 7 8,9 8,9 8,9 L2 .250 6.35 8,9 P Q TL TW r α .100 2.54 .030 .029 .045 .028 .034 .010 45° TP 0.76 0.74 1.14 0.71 0.86 0.25 45° TP 7 5 3,4 3 10 7 NOTES: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. Dimensions are in inches. Millimeters are given for general information only. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). Dimension TL measured from maximum HD. Body contour optional within zone defined by HD, CD, and Q. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by gauging procedure. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in and beyond LL minimum. All three leads. The collector shall be internally connected to the case. Dimension r (radius) applies to both inside corners of tab. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. Lead 1 = emitter, lead 2 = base, lead 3 = collector. For transistor types 2N3439 and 2N3440 (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max. LDS-0022, Rev. 4 (111683) ©2011 Microsemi Corporation Page 6 of 6