The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 February 1998 INCH-POUND MIL-PRF-19500/603C 15 November 1997 SUPERSEDING MIL-PRF-19500/603B 3 May 1996 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, AND 2N7394U JANTXVR, F, G, AND H; AND JANSR, F, G, AND H This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). 1.2 Physical dimensions. See figure 1, TO-254AA and figure 2 (surface mount). 1.3 Maximum ratings. Unless otherwise specified, TC = +25°C. Type PT 1/ 5/ 2N7394 2N7268 2N7269 2B6270 PT VDS VDG VGS TA = +25°C 4/ Top and TSTG VISO 70,000 ft altitude ID1 2/ ID2 IS IDM 3/ TC = +100°C 2/ W W V dc V dc V dc A dc A dc A dc A(pk) °C V dc 150 150 150 150 4 4 4 4 60 100 200 500 60 100 200 500 ±20 ±20 ±20 ±20 35.0 34.0 26.0 11.0 30.0 21.0 16.0 7.0 35.0 34.0 26.0 11.0 200 136 104 44 -55 to N/A N/A N/A 500 +150 1/ Derate linearly 1.2 W/°C for TC > +25°C; 2/ ID= T J max - T C ( RθJC )x( r DSon at T J max ) 3/ ID1 may be limited by pin diameter. 4/ IDM + 4 X ID1; as calculated by footnote 2/. 5/ Electrical characteristics, ratings and conditions for “U” suffix devices (surface mount) are identical to the corresponding non-“U” suffix devices unless otherwise noted. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/603C 1.4 Primary electrical characteristics at TC = +25°C. Type 2N7394 2N7268 2N7269 2N7270 RθJC max EAS at ID1 IAS ohm °C/W mJ A 0.030 0.132 0.230 1.260 0.83 0.83 0.83 0.83 500 500 500 500 35.0 34.0 26.0 11.0 Max rDS(ON) 1/ VGS = 12 V dc Min V(BR)DSS VGS = 0 VGS(TH)1 VDS ≥ VGS ID = 1.0 Max IDSS1 VGS = 0 VDS = 80 ID = 1.0 mA dc mA dc percent of rated VDS TJ = +25°C at ID2 TJ = +150°C at ID2 V dc V dc Min Max µA dc ohm 60 100 200 500 2.0 2.0 2.0 2.0 25 25 25 50 0.027 0.065 0.100 0.450 4.0 4.0 4.0 4.0 1/ Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 2 MIL-PRF-19500/603C Dimensions Symbol Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.89 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 1.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.89 Term 1 Drain Term 2 Source Term 3 Gate NOTES: 1. Dimensions are in inches. 2. Millimeters equivalents are given for general information only. 3. Refer to applicable symbol list. 4. Dimensioning and tolerating are in accordance with ANSI Y14.5M. 5. All terminals are isolated from case. FIGURE 1. Physical dimensions for TO-254AA. 3 MIL-PRF-19500/603C FIGURE 2. Dimensions and configuration of surface mount package outline. 4 MIL-PRF-19500/603C Dimensions SMD-1 Symbol Inches Millimeters Min Max Min Max BL .619 .631 15.73 16.02 BW .444 .456 11.28 11.58 CH --- .142 --- 3.60 LH .010 .020 0.26 0.50 LL1 .409 .421 10.39 10.69 LL2 .151 .163 3.84 4.14 LS1 .210 BSC 5.33 BSC LS2 .105 BSC 2.67 BSC LW 1 .369 .381 9.38 9.67 LW 2 .134 .146 3.41 3.70 Q1 .030 --- 0.76 --- Q2 .035 --- 0.89 --- Term 1 Drain Term 2 Gate Term 3 Source NOTES: 1. Controlling dimension: Inch. 2. Metric equivalents are given for information only. 3. The lid shall be electrically isolated from the drain, gate and source. 4. Dimensioning and Tolerancing shall be in accordance with ANSI Y14.5M 1982. FIGURE 2. Dimensions and configuration of surface mount package outline - Continued. 5 MIL-PRF-19500/603C 3. REQUIREMENTS 3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.3). 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. IAS - Rated avalanche current, nonrepetitive 3.3 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified in MIL-PRF-19500 and on figures 1 and 2 herein. Methods used for electrical isolation of the terminal feedthroughs shall employ materials that contain a minimum of 90 percent AL2O3 (ceramic). Examples of such construction techniques are metallized ceramic eyelets or ceramic walled packages. 3.3.1 Lead material and finish. Lead material shall be Kovar or Alloy 52; a copper core or plated core is permitted. Lead finish shall be solderable in accordance with MIL-PRF-19500 and herein. Where a choice of lead material or finish is desired, it shall be specified in the contract or purchase order (see 6.5). 3.3.2 Internal construction. Multiple chip construction is not be permitted to meet the requirements of this specification. 3.4 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended (see 3.5). a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R ≤ 100 k, whenever bias voltage is to be applied drain to source. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4 and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3 herein. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 6 MIL-PRF-19500/603C 4.2.1 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500 and table III herein. 4.3 Screening (JANTXV and JANS levels only). Screening shall be in accordance with appendix E, table IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see appendix E, table IV of MIL-PRF-19500) Measurement JANS level JANTXV levels 1/ Method 3470 (see 4.5.4) Method 3470 (see 4.5.4) 1/ Method 3161 (see 4.5.3) Method 3161 (see 4.5.3) 1/ Gate stress test (see 4.5.5) Gate stress test (see 4.5.5) Subgroup 2 of table II herein. IGSS, IDSS1 Subgroup 2 of table I herein 10 MIL-STD-750, method 1042, test condition B MIL-STD-750, method 1042, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(on), VGS(TH) Subgroup 2 of table I herein IGSSF1, IGSSR1, IDSS1, rDS(on), VGS(TH) Subgroup 2 of table I herein 9 1/ ∆IGSSF1 = ± 20 nA dc or ± 100 percent of initial value, whichever is greater. ∆IGSSR1 = ± 20 nA dc or ± 100 percent of initial value, whichever is greater. ∆IDSS1 = ± 10 µA dc or ± 100 percent of initial value, whichever is greater. 12 MIL-STD-750, method 1042, test condition A MIL-STD-750, method 1042, test condition A 13 Subgroups 2 and 3 of table I herein Subgroups 2 and 3 of table I herein ∆IGSSF1 = ± 20 nA dc or ± 100 percent of initial value, whichever is greater. ∆IGSSF1 = ± 20 nA dc or ± 100 percent of initial value, whichever is greater. ∆IGSSR1 = ± 20 nA dc or ± 100 percent of initial value, whichever is greater. ∆IGSSR1 = ± 20 nA dc or ± 100 percent of initial value, whichever is greater. ∆IDSS1 = ± 10 µA dc or ± 100 percent of initial value, whichever is greater. ∆IDSS1 = ± 10 µA dc or ± 100 percent of initial value, whichever is greater. ∆rDS(on)1 =± 20 percent of initial value ∆rDS(on)1 =± 20 percent of initial value ∆VGS(th)1 = ± 20 percent of initial value ∆VGS(th)1 = ± 20 percent of initial value 1/ Shall be performed anytime before screen 10. 7 MIL-PRF-19500/603C 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. Alternate flow is allowed for quality conformance inspection in accordance with appendix E, of MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table V of MIL-PRF-19500 and table I herein. End-point electrical measurements shall be in accordance with table I, group A, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table VIa (JANS) and table VIb (JANTX and JANTXV) of MIL-PRF-19500, and herein. Electrical measurements (endpoints) and delta requirements shall be in accordance with table I, group A, subgroup 2 herein. 4.4.2.1 Group B inspection, appendix E, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Test condition G, 100 cycles. B3 2075 See 3.3.2. B3 2077 SEM qualification may be performed anytime prior to lot formation. B4 1042 The heating cycle shall be 30 seconds minimum. B5 1042 Accelerated steady-state reverse bias, condition B, VGS = rated, TA = +175°C, t = 24 hours minimum; or, TA = +150°C, t = 48 hours minimum. B5 1042 Accelerated steady-state reverse bias, condition A, VDS = rated, TA = +175°C, t = 120 hours minimum; or, TA = +150°C, t = 240 hours minimum. B5 2037 Bond strength (Al-Au die interconnects only); test condition A. B6 3161 See 4.5.2. 4.4.2.2 Group B inspection, appendix E, table VIb (JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1051 Test condition G, 25 cycles. B3 1042 The heating cycle shall be 30 seconds minimum. B4 2075 See 3.3.2. B4 2037 Test condition A. All internal bond wires for each device shall be pulled separately. B5 and B6 ---- Not applicable. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable of table I, group A, subgroup 2 herein. Subgroup Method Condition C2 2036 Test condition A; weight = 10 pounds; t = 15 s (applicable to TO-254AA only). C5 1001 Test condition C. For device type 2N7270: VDS = 500 V; I(ISO) < 0.25 mA. C6 1042 The heating cycle shall be 30 seconds minimum. 4.4.4 Group D Inspection. Group D inspection shall be conducted in accordance with appendix E, table VII of MIL-PRF-19500 and table II herein. 8 MIL-PRF-19500/603C 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in of MIL-STD-750. 4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method 3161 of MIL-STD-750. The maximum limit of RθJC(max) = 0.83°C/W. The following parameter measurements shall apply: a. Measuring current (IM) ........................................................ 10 mA. b. Drain heating current (IH) .................................................... 4 A minimum. c. Heating time (tH) ................................................................. Steady-state (see MIL-STD-750, method 3161for definition). d. Drain-source heating voltage (VH) ....................................... 25 V (20 V for “U” suffix devices). e. Measurement time delay (tMD) ........................................... 30 to 60 µs. f. Sample window time (tSW ) ................................................. 10 µs maximum. 4.5.3 Thermal impedance (ZθJC measurements). The ZθJC measurements shall be performed in accordance with MIL-STD750, method 3161. The maximum limit (not to exceed figure 3, thermal impedance curves and the group A, subgroup 2 limits) for ZθJC in screening (appendix E, table VI of MIL-PRF-19500) shall be derived by each vendor by means of statistical process control. When the process has exhibited control and capability, the capability data shall be used to establish the fixed screening limit. In addition to screening, once a fixed limit has been established, monitor all future sealing lots using a random five piece sample from each lot to be plotted on the applicable X, R chart. If a lot exhibits an out of control condition, the entire lot shall be removed from the line and held for Engineering evaluation and disposition. This procedure may be used in lieu of an in line monitor. a. Measuring current (IM) ................................................................ 10 mA. b. Drain heating current (IH) ............................................................ 4 A minimum. c. Heating time (tH) ......................................................................... 100 ms (30 ms for “U” suffix devices). d. Drain-source heating voltage (VH) ............................................... 25 V (20 V for “U” suffix devices). e. Measurement time delay (tMD) ................................................... 30 to 60 µs. f. Sample window time (tSW ) .......................................................... 10 µs maximum. 9 MIL-PRF-19500/603C 4.5.4 Single pulse avalanche energy EAS. a. Peak current (IAS) ....................................................................... IAS(max). b. Peak gate voltage (VGS) .............................................................. 12 V. c. Gate to source resistor (RGS)...................................................... 25Ω ≤ RGS ≤ 200Ω. d. Initial case temperature (TC) ....................................................... +25°C +10°C, -5°C. e. 2E AS2 Inductance (L) ............................................................................. (I D1 ) [(V BR ] − VDD ) VBR mH min imum. f. Number of pulses to be applied .................................................... 1 pulse minimum. g. Supply voltage (VDD) .................................................................. 25 V for 2N7268 and 2N7394, 50 V for 2N7269 and 2N7270. 4.5.5 Gate stress test. a. VGS = 30 V minimum. b. t = 250 µs minimum. 10 MIL-PRF-19500/603C TABLE I. Group A inspection. Inspection 1/ 3/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 1 Visual and mechanical inspection 2071 Subgroup 2 ZθJC Thermal impedance 2/ 3161 See 4.5.3 TO-254 Surface mount device Breakdown voltage, drain to source 3407 VGS = 0 V; ID = 1 mA dc Bias condition C 60 100 200 500 Gate to source voltage threshold 3403 VDS ≥ VGS ID = 1 mA dc Gate current 3411 VGS = +20 and -20 V dc VDS = 80 percent of rated VDS IGSS1 Drain current 3413 VGS = 0 V dc, Bias condition C VDS = 80 percent of rated VDS IDSS1 VGS(TH)1 2N7394 2N7268 2N7269 2N7270 3421 VGS = 12 V dc, condition A pulsed (see 4.5.1), ID = ID2 3421 VGS = 12 V dc, condition A pulsed (see 4.5.1), ID = ID1 2N7394 2N7268 2N7269 2N7270 4011 Pulsed (see 4.5.1), , ID = ID1 VGS = 0 V dc See footnotes at end of table. 11 4.0 V dc ± 100 nA dc 25 25 25 50 µA dc µA dc µA dc µA dc 0.027 0.065 0.100 0.450 ohm ohm ohm ohm 0.030 0.070 0.110 0.500 ohm ohm ohm ohm 1.4 1.4 1.4 1.6 V V V V rDS(on)2 2N7394 2N7268 2N7269 2N7270 Forward voltage 2.0 V dc V dc V dc V dc rDS(on)1 2N7394 2N7268 2N7269 2N7270 Static drain to source “ON”-state resistance °C/W °C/W V(BR)DSS 2N7394 2N7268 2N7269 2N7270 Static drain to source “ON”-state resistance 0.60 0.45 VSD MIL-PRF-19500/603C TABLE I. Group A inspection - Continued. Inspection 1/ 3/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 3 High temperature operation: TC = TJ = +125°C IGSS2 ± 200 VGS = 0 V; bias condition C VDS = 100 percent of rated VDS IDSS2 1.0 VDS = 80 percent of rated VDS IDSS3 0.25 mA dc 0.060 0.132 0.200 1.000 ohm ohm ohm ohm Gate current 3411 VGS = +20 and -20 V dc Bias condition C, VDS = 0 Drain current 3413 Static drain to source “ON”-state resistance 3421 VGS = 12 V dc pulsed (see 4.51), ID = ID2 mA dc rDS(on)3 2N7394 2N7268 2N7269 2N7270 Gate to source voltage (threshold) 3403 Low temperature operation: Gate to source voltage (threshold) VDS ≥ VGS, I = 1 mA dc D nA dc VGS(TH)2 1.0 V dc TC = TJ = +55°C 3403 VDS ≥ VGS, I = 1 mA dc D VGS(TH)3 3475 ID = rated ID2, VDD = 15 V (see 4.5.1) gFS 5.0 V dc Subgroup 4 Forward transconductance 2N7394 2N7268 2N7269 2N7270 Switching time test 12 8 8 4 3472 S S S S ID = ID1, VGS = 12 V dc RG = 2.35Ω, VDD = 50 percent of rated VDS Turn-on delay time td(on) 2N7394 2N7268 2N7269 2N7270 27 45 33 45 See footnotes at end of table. 12 ns ns ns ns MIL-PRF-19500/603C TABLE I. Group A inspection - Continued. Inspection 1/ 3/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 4 - Continued Rise time tr 2N7394 2N7268 2N7269 2N7270 ns ns ns ns 75 170 140 190 ns ns ns ns 75 130 140 130 ns ns ns ns 200 160 170 150 nC nC nC nC td(off) Turn-off delay time 2N7394 2N7268 2N7269 2N7270 tf Fall time 2N7394 2N7268 2N7269 2N7270 Subgroup 5 100 190 140 190 3474 Safe operating area test (high voltage) See figures 4, 5, 6 and 7 tp = 10 ms minimum VDS = 80 percent of maximum rated VDS, (VDS ≤ 200) Electrical measurements See table I, group A, subgroup 2 Subgroup 6 Not applicable Subgroup 7 Gate charge 3471 Condition B On-state gate charge Qg(on) 2N7394 2N7268 2N7269 2N7270 See footnotes at end of table. 13 MIL-PRF-19500/603C TABLE I. Group A inspection - Continued. Inspection 1/ 3/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 7 - Continued Gate to source charge Qgs 2N7394 2N7268 2N7269 2N7270 Gate to drain charge nC nC nC nC 75 65 60 75 nC nC nC nC 280 570 820 1,100 ns ns ns ns Qgd 2N7394 2N7268 2N7269 2N7270 Reverse recovery time 60 35 30 30 3473 di/dt ≤ 100 A/µs, VDD ≤ 30 V, ID = ID1 trr 2N7394 2N7268 2N7269 2N7270 1/ For sampling plan, see MIL-PRF-19500. 2/ This test is required for the following end-point measurements only (not intended for screen 13): JANS - group B, subgroups 3 and 4 JANTX and JANTXV - group B, subgroups 2 and 3; group C, subgroup 6; group E, subgroup 1 3/ Electrical characteristics and conditions for “U” suffix devices (surface mount) are identical to the corresponding non- “U” suffix devices unless otherwise noted. 14 MIL-PRF-19500/603C TABLE II. Group D inspection. MIL-STD-750 Inspection 1/ 2/ 5/ Symbol Method Conditions Preirradiation limits 3/ R F, G, and H Min Max Min Max Postirradiation limits 3/ R F, G, and H Min Max Min Max Unit Subgroup 1 Not applicable TC = +25°C Subgroup 2 Steady-state total dose irradiation (VGS bias) 4/ 1019 VGS = 12 V VDS = 0 Steady-state total dose irradiation (VDS bias) 4/ 1019 VGS = 0 VDS = 80 percent of rated VDS (preirradiation) 3407 VGS = 0; ID = 1 mA bias cond. C End-point electricals Breakdown voltage, drain to source VBRDSS Gate to source voltage (threshold) 3403 VDS ≥ VGS ID = 1 mA V dc V dc V dc V dc 60 100 200 500 60 100 200 500 60 100 200 500 60 100 200 500 2N7394 2N7268 2N7269 2N7270 VGSth 2 2 2 2 2N7394 2N7268 2N7269 2N7270 4 4 4 4 2 2 2 2 4 4 4 4 2 2 2 2 4 4 4 4 1.25 1.25 1.25 1.25 4.50 4.50 4.50 4.50 V dc V dc V dc V dc Gate current 3411 VGS = 20 V VDS = 0 bias cond. C IGSSF1 100 100 100 100 nA dc Gate current 3411 VGS = 20 V VDS = 0 bias cond. C IGSSR1 -100 -100 -100 -100 nA dc See footnotes at end of table. 15 MIL-PRF-19500/603C TABLE II. Group D inspection - Continued. MIL-STD-750 Inspection 1/ 2/ 5/ Symbol Method Conditions 3413 VGS = 0 Bias cond. C VDS = 80 percent of rated VDS (preirradiation) Preirradiation limits 3/ R F, G, and H Min Max Min Max Postirradiation limits 3/ R F, G, and H Min Max Min Max Unit Subgroup 2 Continued Drain current IDSS 2N7394 2N7268 2N7269 2N7270 Static drain to source on-state voltage 3405 VGS =12 V Condition A pulsed see 4.5.1 ID = ID2 4011 VGS = 0 V ID = ID1 25 25 25 50 25 25 25 50 50 50 50 100 µA dc µA dc µA dc µA dc 0.81 1.365 1.6 3.15 0.81 1.365 1.6 3.15 0.81 1.365 1.6 3.15 1.2 1.89 2.48 4.2 Vdc Vdc Vdc Vdc 1.4 1.4 1.4 1.6 1.4 1.4 1.4 1.6 1.4 1.4 1.4 1.6 1.4 1.4 1.4 1.6 Vdc Vdc Vdc Vdc VDSon1 2N7394 2N7268 2N7269 2N7270 Forward voltage source drain diode 25 25 25 50 VSD 2N7394 2N7268 2N7269 2N7270 1/ For sampling plan, see MIL-PRF-19500. 2/ Group D qualification may be performed anytime prior to lot formation. Wafers qualified to these group D QCI requirements may be used for any other detail specification utilizing the same die design. 3/ The F designation represent devices which pass end-points at both 100 k and 300 k rads (Si). The G designation represents devices which pass 100 k, 300 k, and 600 k rad (Si) end-points. H must meet end-points for 100 k, 300 k, 600 k and 1,000 k RAD (Si). 4/ Separate samples shall be pulled for each bias. 5/ At the manufacturer’s option, group D samples need not be subjected to the screening tests, and may be assembled in it’s qualified package or in any qualified package that the manufacturer has data to correlate the performance to the designated package. 16 MIL-PRF-19500/603C TABLE III. Group E inspection (all quality levels) for qualification only. Inspection MIL-STD-750 Method Conditions Subgroup 1 Qualification and large lot quality conformance inspection 12 devices c=0 Thermal shock (temperature cycling) 1051 Hermetic seal 1071 Test condition G. Fine leak Gross leak Electrical measurements See table I, group A, subgroup 2. Subgroup 2 1/ Steady-state gate bias 12 devices c=0 1042 See table I, group A, subgroup 2. Electrical measurements Steady-state reverse bias Condition B, 1,000 hours. 1042 Condition A, 1,000 hours. See table I, group A, subgroup 2. Electrical measurements Subgroup 3 Not applicable Subgroup 4 Thermal resistance 12 devices c=0 3161 RθJC = 0.83 °C/W maximum. See 4.5.2. 1/ A separate sample may be pulled for each test condition. 17 MIL-PRF-19500/603C FIGURE 3. Thermal impedance curves. 18 MIL-PRF-19500/603C 2N7394, 2N7394U FIGURE 4. Safe operating area graph. 19 MIL-PRF-19500/603C 2N7268, 2N7268U FIGURE 5. Safe operating area graph. 20 MIL-PRF-19500/603C 2N7269, 2N7269U FIGURE 6. Safe operating area graph. 21 MIL-PRF-19500/603C 2N7270, 2N7270U FIGURE 7. Safe operating area graph. 22 MIL-PRF-19500/603C 5. PACKAGING 5.1 Packaging. Packaging shall prevent mechanical damage of the devices during shipping and handling and shall not be detrimental to the device. When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 5.2 Marking. Unless otherwise specified (see 6.2), marking shall be in accordance with MIL-STD-129. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. See MIL- PRF-19500. 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Products List QPL No.19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center Columbus, ATTN: DSCC-VQE, 3990 East Broad Street, Columbus, OH 43216-5000. 6.4 Substitution information. Devices covered by this specification are substitutable for the manufacturer's and user's Part or Identifying Number (PIN). This information in no way implies that manufacturer's PIN's are suitable for the military PIN. 1/ Preferred types Commercial types TO254-AA “U” 2N7394 IRHM7054 IRHN 054 2N7268 IRH7150 IRHN 150 2N7269 1RH7250 IRHN 250 2N7270 1RH7450 IRHN 450 1/ IRH 7: 100k RAD (Si) IRH 3: 300k RAD (Si) IRH 4: 600k RAD (Si) IRH 8: 1,000k RAD (Si) 6.5 Ordering data. Acquisition documents may specify the material and finish (see 3.3.1). 6.4 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes. 23 MIL-PRF-19500/603C Custodians: Army - CR Navy - EC Air Force - 17 NASA - NA Preparing activity: DLA - CC (Project 5961- 1951) Review activities: Navy - TD Air Force - 19, 70, 80 24 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/603C 2. DOCUMENT DATE (YYMMDD) 971115 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, NCHANNEL, SILICON TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U AND 2N7394U, JANTXVR, F, G, AND H, AND JANSR, F, G, AND H 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) b. ORGANIZATION c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code) 7. DATE SUBMITTED (YYMMDD) (1) Commercial (2) AUTOVON (If applicable) 8. PREPARING ACTIVITY a. NAME Alan Barone b. TELEPHONE (Include Area Code) (1) Commercial (2) AUTOVON (614)692-0510 850-0510 c. ADDRESS (Include Zip Code) Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH 43216-5000 IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Quality and Standardization Office 5203 Leesburg Pike, Suite 1403, Falls Church, VA 22041-3466 Telephone (703) 756-2340 AUTOVON 289-2340 DD Form 1426, OCT 89 Previous editions are obsolete 198/290