SEMICONDUCTOR KHB9D0N50P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D0N50P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. O C F E DIM MILLIMETERS _ 0.2 9.9 + A G B 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + B Q C I D E K FEATURES P M H VDSS(Min.)= 500V, ID= 9A J I D Drain-Source ON Resistance : RDS(ON)=0.8 F G L J N H N @VGS =10V K 1.46 L _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + M Qg(typ.) =34.6nC N O 1 MAXIMUM RATING (Tc=25 2 3 P 1. GATE 2. DRAIN 3. SOURCE ) Q RATING CHARACTERISTIC SYMBOL TO-220AB KHB9D0N50F1 UNIT KHB9D0N50P1 KHB9D0N50F2 KHB9D0N50F1 500 V Gate-Source Voltage VGSS 30 V Drain Current 9 9* 5.4 5.4* 36 36* E IDP _ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 0.2 12.57 + _ 0.1 0.5 + 13.0 MAX _ 0.1 3.23 + 1.47 MAX 1.47 MAX _ 0.2 2.54 + _ 0.2 6.68 + A K Pulsed (Note1) MILLIMETERS A B C D E F G H J K L M N O Q R G ID @TC=100 DIM B @TC=25 C A O VDSS F Drain-Source Voltage Drain Power Dissipation Tc=25 360 mJ L EAR 13.5 mJ D dv/dt 4.5 V/ns M R J EAS N 135 44 1.07 0.35 W Q Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 1 N 2 H 3 PD Derate above25 Maximum Junction Temperature Storage Temperature Range Tj 150 Tstg -55 150 1. GATE 2. DRAIN 3. SOURCE W/ TO-220IS (1) KHB9D0N50F2 Thermal Characteristics A RthJC 0.93 2.86 /W Thermal Resistance, Case-to-Sink RthCS 0.5 - /W C F Thermal Resistance, Junction-to-Case B E RthJA 62.5 62.5 G Thermal Resistance, Junction-toAmbient P S /W K * : Drain current limited by maximum junction temperature. L L PIN CONNECTION R J M D D D N N 2 H 3 Q 1 G DIM MILLIMETERS A B C D E F G H J K L M N P Q R S _ 0.3 10.0 + _ 0.3 15.0 + _ 2.70 + 0.3 0.76+0.09/-0.05 _ 0.2 Φ3.2 + _ 0.3 3.0 + _ 0.3 12.0 + 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 0.2 4.5 + _ 0.2 2.6 + 0.5 Typ 1. GATE 2. DRAIN 3. SOURCE TO-220IS S 2007. 5. 10 _ 0.2 4.7 + _ 0.2 2.76 + Revision No : 0 1/7 KHB9D0N50P1/F1/F2 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 500 - - V ID=250 A, Referenced to 25 - 0.57 - Static BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, VGS=0V V/ Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10 A Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V Gate Leakage Current IGSS VGS= - - - 0.65 0.8 - 34.6 40 - 5.9 - - 15.5 - - 23 45 - 65 140 - 148 241 RDS(ON) Drain-Source ON Resistance 30V, VDS=0V VGS=10V, ID=4.5A 100 nA Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time VDS=400V, ID=9A VGS=10V (Note4,5) VDD=200V RL=22 td(off) Turn-off Delay time RG=25 nC ns (Note4,5) Turn-off Fall time tf - 81 140 Input Capacitance Ciss - 1389 1805 Reverse Transfer Capacitance Crss - 19.2 24.9 Output Capacitance Coss - 155.7 202 - - 9 - - 36 VDS=25V, VGS=0V, f=1.0MHz pF Source-Drain Diode Ratings IS Continuous Source Current VGS<Vth A Pulsed Source Current ISP Diode Forward Voltage VSD IS=9A, VGS=0V - - 1.5 V Reverse Recovery Time trr IS=9A, VGS=0V, - 357 - ns Reverse Recovery Charge Qrr dIs/dt=100A/ s - 4.87 - C Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L = 8mH, IS=9A, VDD=50V, RG = 25 , Starting Tj = 25 . Note 3) IS 9A, dI/dt 200A/ , VDD Note 4) Pulse Test : Pulse width 300 BVDSS, Starting Tj = 25 . , Duty Cycle 2%. Note 5) Essentially independent of operating temperature. 2007. 5. 10 Revision No : 0 2/7 KHB9D0N50P1/F1/F2 Fig2. ID - VGS VGS TOP : 15.0 V 10.0 V 8.0 V 7.0 V 1 6.0 V 10 5.5 V 5.0 V Bottom : 4.5 V Drain Current ID (A) Drain Current ID (A) Fig1. ID - VDS 0 10 -1 10 -1 0 10 150 C 25 C 0 10 -55 C 10 1 10 1 10 -1 10 2 4 Drain - Source Voltage VDS (V) On - Resistance RDS(ON) (Ω) Normalized Breakdown Voltage BVDSS 2.0 1.1 1.0 0.9 1.5 VGS = 10V 1.0 VGS = 20V 0.5 0 -50 0 50 100 0 150 5 10 1 10 150 C Normalized On Resistance Reverse Drain Current IS (A) 3.0 0 20 25 100 150 Fig6. RDS(ON) - Tj Fig5. IS - VSD 10 15 Drain Current ID (A) Junction Temperature Tj ( C ) 25 C -1 2.5 VGS = 10V IDS = 4.5A 2.0 1.5 1.0 0.5 10 0.2 0.4 0.6 0.8 1.0 Source - Drain Voltage VSD (V) 2007. 5. 10 10 Fig4. RDS(ON) - ID VGS = 0V IDS = 250µA 0.8 -100 8 Gate - Source Voltage VGS (V) Fig3. BVDSS - Tj 1.2 6 Revision No : 0 1.2 1.4 0.0 -100 -50 0 50 Junction Temperature Tj ( C ) 3/7 KHB9D0N50P1/F1/F2 Fig7. C - VDS Fig8. Qg- VGS 12 Frequency = 1MHz 2400 Capacitance (pF) Ciss 2000 1600 Coss 1200 Crss 800 400 0 10-1 100 Gate - Source Voltage VGS (V) 2800 ID = 9A VDS = 100V 10 VDS = 250V 8 VDS = 400V 6 4 2 0 101 0 15 25 20 30 (KHB9D0N50P1) (KHB9D0N50F1,KHB9D0N50F2) Operation in this area is limited by RDS(ON) 102 Operation in this area is limited by RDS(ON) Drain Current ID (A) Drain Current ID (A) 10µs 100µs 101 1ms 100 10ms 100ms DC 10-1 Tc= 25 C Tj = 150 C Single nonrepetitive pulse 10-2 100 35 Fig10. Safe Operation Area Fig9. Safe Operation Area 10 10 Gate - Charge Qg (nC) Drain - Source Voltage VDS (V) 2 5 10µs 101 100µs 1ms 100 10ms 100ms DC 10-1 Tc= 25 C Tj = 150 C Single nonrepetitive pulse 10-2 102 101 103 100 101 102 103 Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V) Fig11. ID - Tj Drain Current ID (A) 10 8 6 4 2 0 25 50 75 100 125 150 Junction Temperature Tj ( C) 2007. 5. 10 Revision No : 0 4/7 KHB9D0N50P1/F1/F2 Normalized Transient Thermal Resistance Fig12. Transient Thermal Response Curve 100 Duty=0.5 0.2 10-1 PDM 0.1 t1 0.05 t2 0.02 0.01 10-2 - Duty Factor, D= t1/t2 Single Pulse 10-5 10-4 10-3 10-2 10-1 100 101 TIME (sec) Normalized Transient Thermal Resistance Fig13. Transient Thermal Response Curve 100 Duty=0.5 0.2 10-1 PDM 0.1 t1 0.05 t2 0.02 10-2 10-5 - Duty Factor, D= t1/t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 100 101 TIME (sec) 2007. 5. 10 Revision No : 0 5/7 KHB9D0N50P1/F1/F2 Fig14. Gate Charge VGS 10 V Fast Recovery Diode ID ID 0.8 VDSS 1.0 mA VDS Q Qgd Qgs VGS Qg Fig15. Single Pulsed Avalanche Energy EAS= 1 LIAS2 2 BVDSS BVDSS - VDD BVDSS IAS L 0.5 VDSS ID(t) 25Ω VDS VDD 10 V VDS(t) VGS Time tp Fig16. Resistive Load Switching VDS 90% RL 0.5 VDSS 25 Ω VDS VGS 10% tf 10V 2007. 5. 10 td(on) VGS Revision No : 0 ton tr td(off) toff 6/7 KHB9D0N50P1/F1/F2 Fig17. Source - Drain Diode Reverse Recovery and dv /dt DUT VDS IF Body Diode Forword Current ISD (DUT) di/dt IRM IS Body Diode Reverse Current 0.8 x VDSS VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V 2007. 5. 10 VGS Revision No : 0 Body Diode Forword Voltage drop 7/7