KSA1281 KSA1281 Audio Power Amplifier • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -50 Units V VCEO VEBO Collector-Emitter Voltage -50 V Emitter-Base Voltage -5 V IC Collector Current -2 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ +150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -100, IE=0 Min. -50 Typ. Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -50 V BVEBO Emitter-Base Breakdown Voltage IE= -1mA, IC=0 -5 V ICBO Collector Cut-off Current VCB= -50V, IE=0 -100 nA IEBO Emitter Cut-off Current VEB= -5V, IC=0 -100 nA hFE1 hFE2 DC Current Gain VCE= -2V, IC= -500mA VCE= -2V, IC= -1.5A 70 40 240 VBE (sat) Base-Emitter Saturation Voltage IC= -1A, IB= -0.05mA -1.2 VCE (sat) Collector-Emitter Saturation Voltage IC= -1A, IB= -0.05mA -0.5 V Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 40 pF fT Current Gain Bandwidth Product VCE= -2V, IC= -500mA 100 MHz V hFE1 Classification Classification hFE1 ©2001 Fairchild Semiconductor Corporation O 70 ~ 140 Y 120 ~ 240 Rev. A1, June 2001 KSA1281 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics -1400 IB = -7mA IC[mA], COLLECTOR CURRENT -1200 IB = -6mA -1000 IB = -5mA -800 IB = -4mA -600 IB = -3mA -400 IB = -2mA -200 IB = -1mA 0 0 -2 -4 -6 -8 -10 -12 -14 -16 -1 IC = 50IB o Ta = 25 C -0.1 -0.01 -1-1 VCE[V], COLLECTOR-EMITTER VOLTAGE -1000 -100 -100 -10 -10 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. Base-Emitter Saturation Voltage -1400 VCE(sat)[V], SATURATION VOLTAGE VCE = -2V IC[mA], COLLECTOR CURRENT -1200 -1 IC = 50IB o Ta = 25 C -0.1 -0.01 -1-1 -800 -600 -400 -200 0 0.0 -1000 -100 -100 -10 -10 -1000 -0.2 -0.6 -0.8 -1.0 -1.2 -1.4 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage -10 1.4 IC(MAX)PLUS 1.2 IC(MAX) -1 PD[W], POWER DISSIPATION IC[mA], COLLECTOR CURRENT -0.4 1ms 1s o Ta=25 C D.C. OPERATION -0.1 VCEOMAX -0.01 -0.1 -1 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation -100 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 175 o Ta[ C], AMBIENT TEMPERATURE Figure 6. Power Derating Rev. A1, June 2001 KSA1281 Package Demensions TO-92L 0.70MAX. 1.00 ±0.10 1.70 ±0.20 13.50 ±0.40 8.00 ±0.20 4.90 ±0.20 0.80 ±0.10 1.00MAX. 0.50 ±0.10 1.27TYP [1.27 ±0.20] 0.45 ±0.10 3.90 ±0.20 0.45 ±0.10 3.90 ±0.20 1.45 ±0.20 2.54 TYP Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3