KSB601 KSB601 Low Frequency Power Amplifier • Medium Speed Switching Industrial Use • Complement to KSD560 1 1.Base TO-220 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value - 100 Units V VCEO Collector-Emitter Voltage - 100 V VEBO Emitter-Base Voltage -7 V IC Collector Current (DC) -5 A ICP *Collector Current (Pulse) -8 A IB Base Current PC Collector Dissipation (Ta=25°C) - 0.5 A 1.5 W PC Collector Dissipation (TC=25°C) 30 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW≤10ms, Duty Cycle≤50% ©2000 Fairchild Semiconductor International Rev. A, February 2000 Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage Test Condition IC = - 3A, IB1 = - 3mA, L = 1mH Min. 100 Typ. Max. Units V VCEX(sus)1 Collector-Emitter Sustaining Voltage IC = - 3A, IB1 = - IB2 = - 3mA VBE(off) = 5V, L =180µH Clamped 100 V VCEX(sus)2 Collector-Emitter Sustaining Voltage IC = - 6A, IB1 = - 12mA IB2 = 3mA, VBE(off) = 5V L = 180uH, Clamped 100 V ICBO Collector Cut-off Current VCB = - 100V, IE = 0 - 10 µA ICER Collector Cut-off Current VCE = - 100V, RBE = 51Ω TC= 125°C -1 mA ICEX1 Collector Cut-off Current VCE = - 100V, VBE(off) = 1.5V - 10 µA ICEX2 Collector Cut-off Current VCE = - 100V, VBE(off) = 1.5V TC = 125°C -1 mA IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 -3 mA hFE1 hFE2 *DC Current Gain VCE = - 2V, IC = - 3A VCE = - 2V, IC = - 5A VCE(sat) * Collector-Emitter Saturation Voltage IC = - 3A, IB = - 3mA - 1.5 VBE(sat) * Base-Emitter Saturation Voltage IC = - 3A, IB = - 3mA -2 tON Turn ON Time tS Storage tF Fall time VCC = - 50V , IC = - 3A IB1 = - IB2 = - 3mA RL = 17Ω 2000 500 15000 V V 0.5 µs 1 µs 1 µs * Pulse Test: PW≤350µs, Duty Cycle≤2% hFE Classification Classification R O Y hFE1 2000 ~ 5000 3000 ~ 7000 5000 ~ 15000 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB601 Electrical Characteristics TC=25°C unless otherwise noted KSB601 Typical Characteristics IB = -10mA IB = -6mA IB = -4mA -4 IB = m -2 10000 A VCE = -2V IB .5mA = -1 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT -5 IB = -1.0mA -3 IB = -0.8mA -2 IB = -0.6mA -1 1000 100 IB = -0.4mA -0 -1 -2 -3 -4 10 -0.01 -5 -0.1 Figure 1. Static Characteristic Figure 2. DC current Gain -10 IC = 1000 IB us 50u s 0u s -0.1 ite d VCE(sat) 100 L im -1 -1 10m s Dis sip Lim atio n ited 30 VBE(sat) 100ms s/b IC[A], COLLECTOR CURRENT -10 s 1m VCE(sat)[V],VBE(sat)[V] SATURATION VOLTAGE -10 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE -0.01 -0.001 -0.1 -0.1 -1 -10 -1 -100 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Safe Operating Area -16 160 -14 140 -12 120 dT[%], Ic DERATING IC[A], COLLECTOR CURRENT -1 -10 -8 -6 -4 100 80 s/b Di ss 60 40 ip a tio n Lim Li m ite ite d d 20 -2 0 -0 -20 -40 -60 -80 -100 -120 -140 -160 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Reverse Bias Safe Operating Areas ©2000 Fairchild Semiconductor International 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 6. Derating Curve of Safe Operating Areas Rev. A, February 2000 KSB601 Typical Characteristics (Continued) 40 PC[W], POWER DISSIPATION 35 30 25 20 15 10 5 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB601 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E