KSP24 KSP24 VHF Transistor TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO IEBO IC PC Parameter Value 40 Units V Collector-Emitter Voltage 30 V Emitter-Base Voltage 4.0 V Collector Current 100 mA Collector Power Dissipation (Ta=25°C) 350 mW Derate Above 25°C 2.8 mW/°C °C TJ Junction Temperature 135 TSTG Storage Temperature -55~150 °C RTH(j-a) Thermal Resistance, Junction to Ambient 357 °C/W Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=100µA, IE=0 BVCEO Collector-Emitter Breakdown Voltage IC=1mA, IB=0 30 V BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 4.0 V ICBO Collector Cut-off Current VCB=15V, IE=0 hFE DC Current Gain VCE=10V, IC=8mA 30 fT Current Gain Bandwidth Product VCE=10V, IC=8mA, f=100MHz 400 Cob Output Capacitance VCB=10V, IE=0, f=1MHz GCE Conversion Gain (213 to 45MHz) VCC=20V, IC=8mA Oscillator Injection=150mV 19 24 dB GCE Conversion Gain (60 to 45MHz) VCC=20V, IC=8mA Oscillator Injection=150mV 24 29 dB ©2001 Fairchild Semiconductor Corporation Min. 40 Typ. Max. 50 620 0.25 Units V nA MHz 0.36 pF Rev. A1, June 2001 KSP24 Typical Characteristics hFE, DC CURRENT GAIN VCE = 10V 100 10 1 0.1 1 10 100 1000 10000 VCE(sat),VBE(sat)[mA], SATURATION VOLTAGE 1000 IC = 10IB VBE(sat) 1000 VCE (sat) 100 10 0.1 1 IC[mA], COLLECTOR CURRENT 1000 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10k 40 VCE = 10V f = 100MHz OSCInj = 150mVrms GPC[dB], CONVERSION GAIN fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 100 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain 1k 100 fsig = 60MHz, fosc = 104MHz 30 20 fsig = 213MHz, fosc = 275MHz 10 0 10 1 10 0 100 2 4 6 8 10 12 14 16 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. Current Gain Bandwidth Product Figure 4. Conversion Gain versus Collector Current 40 50 IC = 8mADC yie[ ], INPUT ADMITTANCE fsig = 60MHz, fosc = 104MHz 30 20 fsig = 213MHz, fosc = 275MHz 213MHz 60MHz 40 gie 30 20 gie bie Ω GPC[dB], CONVERSION GAIN 10 10 0 10 bie 0 0 100 200 300 400 Vi[mV], OSCILLATION INJECTION Figure 5. Conversion Gain versus Injection Level ©2001 Fairchild Semiconductor Corporation 0 2 4 6 8 10 12 14 16 18 20 IC[mA], COLLECTOR CURRENT Figure 6. Input Admittance Rev. A1, June 2001 KSP24 Typical Characteristics (Continued) 240 ], FORWARD TRANSFER ADMITTANCE ], REVERSE TRANSFER ADMITTANCE 0.10 f = 45MHz 0.08 -bre 0.06 0.04 gre < -0.01[mmho] 0.02 gfe 160 bfe 120 80 40 Ω yfe[ Ω yre[ f = 45MHz 200 0.00 0 2 4 6 8 10 12 14 16 18 20 IC[mA], COLLECTOR CURRENT 0 0 2 4 6 8 10 12 14 16 18 20 IC[mA], COLLECTOR CURRENT Figure 7. Reverse Transfer Admittance Figure 8. Forward Transfer Admittance 1.0 ], OUTPUT ADMITTANCE f = 45MHz 0.8 0.6 goe 0.4 yce[ Ω boe 0.2 0.0 0 2 4 6 8 10 12 14 16 18 20 IC[mA], COLLECTOR CURRENT Figure 9. Output Admittance ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSP24 Package Demensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3