LL916, LL916A, LL916B HIGH CONDUCTANCE FAST DIODES Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit WIV 75 V Average Rectified Current IO 200 mA DC Forward Current IF 300 mA Recurrent Peak Forward Current if 400 mA if(surge) if(surge) 1 4 A A PD 500 3.33 mW o mW/ C RθJA 300 Junction Temperature Tj 175 O Storage Temperature Range TS -65 to +200 O Working Inverse Voltage Peak Forward Surge Current Pulse width = 1 second Pulse width = 1 microsecond Total Device Dissipation o Derate above 25 C Thermal Resistance, Junction to Ambient o C/W C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/04/2002 LL916, LL916A, LL916B Characteristics at TA = 25oC Symbol Min. Typ. Max. Unit at IR = 100μA BV 100 - at IR = 5μA BV 75 - - V V IR - - at VR = 20V, TA = 150 C IR - - at VR = 75V IR - - 25 50 5 nA μA μA 730 1 1 1 mV V V V Breakdown Voltage Reverse Current at VR = 20V o Forward Voltage at IF = 5mA LL916B VF 630 - at IF = 10mA LL916 VF - - at IF = 20mA LL916A VF - - at IF = 30mA LL916B VF - - CO - - 2 pF trr - - 4 ns Diode Capacitance at f = 1MHz Reverse Recovery Time at IF = 10mA, VR = 6V(60mA), IRR = 1.0mA, RL = 100Ω Notes:(1) These ratings are based on a maximum junction temperature of 200 degrees C. (2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/04/2002 LL916, LL916A, LL916B Typical Characteristics 160 REVERSE CURRENT vs REVERSE VOLTAGE I R -10 to 100 V I R -REVERSE CURRENT(nA) VR -REVERSE VOLTAGE (V) REVERSE VOLTAGE vs REVERSE CURRENT BV-1.0 to 100 uA o Ta=25 C 150 140 130 120 120 o Ta=25 C 100 80 60 40 20 0 20 10 110 1 2 5 3 10 20 30 50 30 50 70 100 100 VR -REVERSE VOLTAGE (V) I R -REVERSE CURRENT (uA) GENERAL RULE:The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature FORWARD VOLTAGE vs FORWARD CURRENT VF -1 to 100 uA FORWARD VOLTAGE vs FORWARD CURRENT VF -0.1 to 100 mA 750 o VF -FORWARD VOLTAGE (mV) VF -FORWARD VOLTAGE (mV) 550 Ta=25 C 500 450 400 350 300 250 1 2 5 3 10 20 30 50 o Ta=25 C 700 650 600 550 500 450 0.1 100 0.2 0.3 I F -FORWARD CURRENT (uA) 1.4 1.2 1 0.8 2 5 3 FORWARD VOLTAGE vs AMBIENT TEMPERATURE VF -0.01 - 20 mA (-40 to+65 Deg C) VF -FORWARD VOLTAGE (V) VF -FORWARD VOLTAGE (V) o Ta=25 C 1 I F -FORWARD CURRENT (mA) FORWARD VOLTAGE vs FORWARD CURRENT VF -10 to 800 mA 1.6 0.5 900 800 Typical o Ta=-40 C 700 o 600 Ta=+25 C 500 o Ta=+65 C 400 300 0.6 10 20 30 50 100 200 300 500 0.01 0.03 I F -FORWARD CURRENT (mA) 0.1 0.3 1 3 10 I F -FORWARD CURRENT (mA) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/04/2002 10 LL916, LL916A, LL916B Typical Characteristics REVERSE RECOVERY TIME vs REVERSE CURRENT CAPACITANCE vs REVERSE VOLTAGE VR=0.0 to 15 V REVERSE RECOVERY (nS) 0.9 o CAPACITANCE (pF) Ta=25 C 0.85 0.8 0.75 0 2 4 6 8 10 12 14 4 o Ta=25 C 3.5 3 2.5 2 1.5 1 10 I-CURRENT (mA) 400 300 I O-A VER 200 -F OR W AR AGE REC T 100 D CU R IFIE RE NT ST EA DY DC ST URR A ENT -mA TE-m 0 0 50 40 50 60 A POWER DERATING CURVE P D -POWER DISSIPATION (mW) Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (TA) IR 30 REVERSE CURRENT (mA) I F =10mA-I RR =1.0mA-Rloop=100 Ohms REVERSE VOLTAGE (V) 500 20 500 DO-35 400 300 SOT-23 200 100 150 100 0 0 50 100 150 o TA-AMBIENT TEMPERATURE ( C) o I O-AVERAGE TEMPERATURE ( C) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/04/2002 150