NSC LMH6618

LMH6618
130 MHz, 1.25 mA Rail-to-Rail Input and Output Operational
Amplifier with Shutdown
General Description
Features
The LMH6618 is a 130 MHz rail-to-rail input and output amplifier designed for ease of use in a wide range of applications
requiring high speed, low supply current, low noise, and the
ability to drive complex ADC and video loads. The operating
voltage range extends from 2.7V to 11V and the supply current is typically 1.25 mA at 5V.
The amplifier’s voltage feedback design topology provides
balanced inputs and high open loop gain for ease of use and
accuracy in applications such as active filter design. Offset
voltage is typically 0.1 mV and settling time to 0.01% is 120
ns which combined with an 80 dBc SFDR at 1 MHz makes
the part suitable for use as an input buffer for popular 10-bit
and 12-bit mega-sample ADCs.
The input common mode range extends 200 mV beyond the
supply rails. The output swings to within 270 mV of the supply
rails for a 150Ω load and 83 mV of the supply rail for a 1 kΩ
load providing true single supply operation and maximum signal dynamic range on low power rails. The amplifier output
will source and sink 35 mA and drive up to 15 pF loads without
the need for external compensation.
The LMH6618 has an active low disable pin which reduces
the supply current to 72 µA and is offered in the space saving
6-Pin TSOT23 package. The LMH6618 is available with a
−40°C to +125°C extended industrial temperature grade.
VS = 5V, RL = 1 kΩ, TA = 25°C and AV = +1, unless otherwise
specified.
2.7V to 11V
■ Operating voltage range
1.25 mA
■ Supply current
130 MHz
■ Small signal bandwidth
55 V/µs
■ Slew rate
90 ns
■ Settling time to 0.1%
120 ns
■ Settling time to 0.01%
80 dBc
■ SFDR (f = 1 MHz, AV = +1, VOUT = 2 VPP)
15 MHz
■ 0.1 dB bandwidth (AV = +2)
10 nV/√Hz
■ Low voltage noise
−40°C to +125°C
■ Industrial temperature grade
■ Rail-to-Rail input and output
Applications
■
■
■
■
■
■
■
ADC driver
DAC buffer
Active filters
High speed sensor amplifier
Current sense amplifier
Portable video
STB, TV video amplifier
Typical Application
20195829
WEBENCH® is a registered trademark of National Semiconductor Corporation.
© 2007 National Semiconductor Corporation
201958
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LMH6618 130 MHz, 1.25 mA Rail-to-Rail Input and Output Operational Amplifier with Shutdown
August 2007
LMH6618
Supply Voltage (VS = V+ – V−)
Junction Temperature (Note 3)
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Operating Ratings
V+
12V
150°C max
(Note 1)
Supply Voltage (VS =
–
Ambient Temperature Range (Note 3)
ESD Tolerance (Note 2)
Human Body Model
For input pins only
For all other pins
Machine Model
2000V
2000V
200V
V−)
2.7V to 11V
−40°C to +125°C
Package Thermal Resistance (θJA)
6-Pin TSOT23
231°C/W
+3V Electrical Characteristics
Unless otherwise specified, all limits are guaranteed for TJ = +25°C,
V+ = 3V, V− = 0V, DISABLE = 3V, VCM = VO = V+/2, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF.
Boldface Limits apply at temperature extremes. (Note 4)
Symbol
Parameter
Condition
Min
(Note 8)
Typ
(Note 7)
Max
(Note 8)
Units
Frequency Domain Response
SSBW
–3 dB Bandwidth Small Signal
AV = 1, RL = 1 kΩ, VOUT = 0.2 VPP
120
AV = 2, −1, RL = 1 kΩ, VOUT = 0.2 VPP
56
GBW
Gain Bandwidth
AV = 10, RF = 2 kΩ, RG = 221Ω, RL = 1 kΩ,
VOUT = 0.2 VPP
LSBW
−3 dB Bandwidth Large Signal
AV = 1, RL = 1 kΩ, VOUT = 2 VPP
13
AV = 2, RL = 150Ω, VOUT = 2 VPP
13
55
MHz
71
MHz
MHz
Peak
Peaking
AV = 1, CL = 5 pF
1.5
dB
0.1
dBBW
0.1 dB Bandwidth
AV = 2, VOUT = 0.5 VPP ,
15
MHz
DG
Differential Gain
0.1
%
0.1
deg
36
ns
46
V/μs
RF = RG = 825Ω
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
RL = 150Ω to
DP
Differential Phase
V+/2
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
RL = 150Ω to
V+/2
Time Domain Response
tr/tf
Rise & Fall Time
2V Step, AV = 1
SR
Slew Rate
2V Step, AV = 1
ts_0.1
0.1% Settling Time
2V Step, AV = −1
90
ts_0.01
0.01% Settling Time
2V Step, AV = −1
120
fC = 100 kHz, VOUT= 2 VPP, RL = 1 kΩ
100
fC = 1 MHz, VOUT = 2 VPP, RL = 1 kΩ
80
fC = 5 MHz, VOUT = 2 VPP, RL = 1 kΩ
58
36
ns
Noise and Distortion Performance
SFDR
Spurious Free Dynamic Range
dBc
en
Input Voltage Noise
f = 100 kHz
10
nV/
in
Input Current Noise
f = 100 kHz
1
pA/
Input, DC Performance
VOS
Input Offset Voltage
VCM = 0.5V (pnp active)
VCM = 2.5V (npn active)
0.1
±0.6
±1.0
TCVOS
Input Offset Voltage Average
Drift
(Note 5)
0.8
IB
Input Bias Current
VCM = 0.5V (pnp active)
−1.4
−2.6
VCM = 2.5V (npn active)
+1.0
+1.8
±0.27
mV
μV/°C
μA
μA
IO
Input Offset Current
0.01
CIN
Input Capacitance
1.5
pF
RIN
Input Resistance
8
MΩ
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2
Parameter
Condition
DC, CMRR ≥ 65 dB
CMVR
Input Voltage Range
CMRR
Common Mode Rejection Ratio VCM Stepped from −0.1V to 1.4V
Open Loop Gain
Typ
(Note 7)
−0.2
VCM Stepped from 2.0V to 3.1V
AOL
Min
(Note 8)
78
96
81
107
RL = 1 kΩ to V+/2
98
RL = 150Ω to V+/2
82
Max
(Note 8)
Units
3.2
V
dB
dB
Output DC Characteristics
VO
Output Swing High
(Voltage from V+ Supply Rail)
Output Swing Low
(Voltage from V− Supply Rail)
RL = 1 kΩ to V+/2
56
62
50
RL =150Ω to V+/2
172
198
160
RL = 1 kΩ to V+/2
60
66
74
RL =150Ω to V+/2
170
184
217
RL = 150Ω to V−
29
39
43
IOUT
Linear Output Current
VOUT = V+/2 (Note 6)
RO
Output Resistance
f = 1 MHz
±25
mV
±35
mA
0.17
Ω
Enable Pin Operation
Enable High Voltage Threshold Enabled
Enable Pin High Current
VDISABLE = 3V
Enable Low Voltage Threshold
Disabled
Enable Pin Low Current
VDISABLE = 0V
2.0
V
0.04
µA
1.0
V
1
µA
Ton
Turn-On Time
25
ns
Toff
Turn-Off Time
90
ns
104
dB
Power Supply Performance
PSRR
Power Supply Rejection Ratio
DC, VCM = 0.5V, VS = 2.7V to 11V
84
IS
Supply Current
RL = ∞
1.2
1.5
1.7
mA
ISD
Disable Shutdown Current
DISABLE = 0V
59
85
μA
+5V Electrical Characteristics
Unless otherwise specified, all limits are guaranteed for TJ = +25°C,
V+ = 5V, V− = 0V, DISABLE = 5V, VCM = VO = V+/2, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF.
Boldface Limits apply at temperature extremes.
Symbol
Parameter
Condition
Min
(Note 8)
Typ
(Note 7)
Max
(Note 8)
Units
Frequency Domain Response
SSBW
–3 dB Bandwidth Small Signal
AV = 1, RL = 1 kΩ, VOUT = 0.2 VPP
130
AV = 2, −1, RL = 1 kΩ, VOUT = 0.2 VPP
53
GBW
Gain Bandwidth
AV = 10, RF = 2 kΩ, RG = 221Ω, RL = 1 kΩ,
VOUT = 0.2 VPP
LSBW
−3 dB Bandwidth Large Signal
AV = 1, RL = 1 kΩ, VOUT = 2 VPP
15
AV = 2, RL = 150Ω, VOUT = 2 VPP
15
54
64
MHz
MHz
MHz
Peak
Peaking
AV = 1, CL = 5 pF
0.5
dB
0.1
dBBW
0.1 dB Bandwidth
AV = 2, VOUT = 0.5 VPP,
15
MHz
DG
Differential Gain
0.1
%
RF = RG = 1 kΩ
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
RL = 150Ω to
V+/2
3
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LMH6618
Symbol
LMH6618
Symbol
DP
Parameter
Differential Phase
Condition
Min
(Note 8)
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
Typ
(Note 7)
Max
(Note 8)
0.1
Units
deg
RL = 150Ω to V+/2
Time Domain Response
tr/tf
Rise & Fall Time
2V Step, AV = 1
SR
Slew Rate
2V Step, AV = 1
ts_0.1
0.1% Settling Time
2V Step, AV = −1
90
ts_0.01
0.01% Settling Time
2V Step, AV = −1
120
fC = 100 kHz, VOUT = 2 VPP, RL = 1 kΩ
100
fC = 1 MHz, VOUT = 2 VPP, RL = 1 kΩ
80
44
30
ns
55
V/μs
ns
Distortion and Noise Performance
SFDR
Spurious Free Dynamic Range
dBc
fC = 5 MHz, VO = 2 VPP, RL = 1 kΩ
58
en
Input Voltage Noise
f = 100 kHz
10
nV/
in
Input Current Noise
f = 100 kHz
1
pA/
Input, DC Performance
VOS
Input Offset Voltage
VCM = 0.5V (pnp active)
VCM = 4.5V (npn active)
0.1
±0.6
±1.0
TCVOS
Input Offset Voltage Average
Drift
(Note 5)
0.8
IB
Input Bias Current
VCM = 0.5V (pnp active)
−1.5
−2.4
VCM = 4.5V (npn active)
+1.0
+1.9
±0.26
mV
µV/°C
μA
μA
IO
Input Offset Current
0.01
CIN
Input Capacitance
1.5
pF
RIN
Input Resistance
8
MΩ
CMVR
Input Voltage Range
DC, CMRR ≥ 65 dB
CMRR
Common Mode Rejection Ratio
VCM Stepped from −0.1V to 3.4V
81
98
VCM Stepped from 4.0V to 5.1V
84
108
AOL
Open Loop Gain
−0.2
5.2
RL = 1 kΩ to V+/2
100
RL = 150Ω to V+/2
83
V
dB
dB
Output DC Characteristics
VO
Output Swing High
(Voltage from V+ Supply Rail)
Output Swing Low
(Voltage from V− Supply Rail)
RL = 1 kΩ to V+/2
73
82
60
RL =150Ω to V+/2
255
295
230
RL = 1 kΩ to V+/2
75
83
96
RL =150Ω to V+/2
250
270
321
RL = 150Ω to V−
32
43
45
IOUT
Linear Output Current
VOUT = V+/2 (Note 6)
RO
Output Resistance
f = 1 MHz
±25
mV
±35
mA
0.17
Ω
Enable Pin Operation
Enable High Voltage Threshold
Enabled
Enable Pin High Current
VDISABLE = 5V
Enable Low Voltage Threshold
Disabled
Enable Pin Low Current
VDISABLE = 0V
3.0
V
1.2
µA
2.0
V
2.5
µA
Ton
Turn-On Time
25
ns
Toff
Turn-Off Time
90
ns
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4
Parameter
Condition
Min
(Note 8)
Typ
(Note 7)
Max
(Note 8)
Units
Power Supply Performance
PSRR
Power Supply Rejection Ratio
DC, VCM = 0.5V, VS = 2.7V to 11V
IS
Supply Current
RL = ∞
ISD
Disable Shutdown Current
DISABLE = 0V
84
104
dB
1.25
1.5
1.7
mA
72
105
μA
±5V Electrical Characteristics
Unless otherwise specified, all limits are guaranteed for TJ = +25°C,
V+ = 5V, V− = −5V, DISABLE = 5V, VCM = VO = 0V, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1, RL = 1 kΩ || 5 pF.
Boldface Limits apply at temperature extremes.
Symbol
Parameter
Condition
Min
(Note 8)
Typ
(Note 7)
Max
(Note 8)
Units
Frequency Domain Response
SSBW
–3 dB Bandwidth Small Signal
AV = 1, RL = 1 kΩ, VOUT = 0.2 VPP
140
AV = 2, −1, RL = 1 kΩ, VOUT = 0.2 VPP
53
GBW
Gain Bandwidth
AV = 10, RF = 2 kΩ, RG = 221Ω, RL = 1 kΩ,
VOUT = 0.2 VPP
LSBW
−3 dB Bandwidth Large Signal
AV = 1, RL = 1 kΩ, VOUT = 2 VPP
16
AV = 2, RL = 150Ω, VOUT = 2 VPP
15
Peak
Peaking
AV = 1, CL = 5 pF
0.1
dBBW
0.1 dB Bandwidth
AV = 2, VOUT = 0.5 VPP,
DG
Differential Gain
54
MHz
65
MHz
MHz
0.05
dB
15
MHz
0.1
%
0.1
deg
30
ns
57
V/μs
RF = RG = 1.21 kΩ
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
RL = 150Ω to V+/2
DP
Differential Phase
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
RL = 150Ω to V+/2
Time Domain Response
tr/tf
Rise & Fall Time
2V Step, AV = 1
SR
Slew Rate
2V Step, AV = 1
ts_0.1
0.1% Settling Time
2V Step, AV = −1
90
ts_0.01
0.01% Settling Time
2V Step, AV = −1
120
fC = 100 kHz, VOUT = 2 VPP, RL = 1 kΩ
100
fC = 1 MHz, VOUT = 2 VPP, RL = 1 kΩ
80
45
ns
Noise and Distortion Performance
SFDR
Spurious Free Dynamic Range
dBc
fC = 5 MHz, VOUT = 2 VPP, RL = 1 kΩ
58
en
Input Voltage Noise
f = 100 kHz
10
nV/
in
Input Current Noise
f = 100 kHz
1
pA/
Input DC Performance
VOS
Input Offset Voltage
VCM = −4.5V (pnp active)
VCM = 4.5V (npn active)
0.1
TCVOS
Input Offset Voltage Average
Drift
(Note 5)
0.9
IB
Input Bias Current
VCM = −4.5V (pnp active)
−1.5
−2.4
VCM = 4.5V (npn active)
+1.0
+1.9
±0.26
IO
Input Offset Current
0.01
CIN
Input Capacitance
1.5
RIN
Input Resistance
CMVR
Input Voltage Range
±0.6
±1.0
µV/°C
−5.2
5
μA
μA
pF
8
DC, CMRR ≥ 65 dB
mV
MΩ
5.2
V
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LMH6618
Symbol
LMH6618
Symbol
CMRR
AOL
Parameter
Common Mode Rejection Ratio
Open Loop Gain
Condition
Min
(Note 8)
Typ
(Note 7)
VCM Stepped from −5.1V to 3.4V
84
100
VCM Stepped from 4.0V to 5.1V
83
108
RL = 1 kΩ to V+/2
95
RL = 150Ω to
84
V+/2
Max
(Note 8)
Units
dB
dB
Output DC Characteristics
VO
Output Swing High
(Voltage from V+ Supply Rail)
Output Swing Low
(Voltage from V− Supply Rail)
RL = 1 kΩ to GND
111
126
100
RL =150Ω to GND
457
526
430
RL = 1 kΩ to GND
110
121
136
RL =150Ω to GND
440
474
559
RL = 150Ω to V−
35
51
52
IOUT
Linear Output Current
VOUT = V+/2 (Note 6)
RO
Output Resistance
f = 1 MHz
±25
mV
±35
mA
0.17
Ω
16
µA
Enable Pin Operation
Enable High Voltage Threshold
Enabled
Enable Pin High Current
VDISABLE = +5V
Enable Low Voltage Threshold
Disabled
Enable Pin Low Current
VDISABLE = −5V
5.5
V
4.5
V
17
µA
Ton
Turn-On Time
25
ns
Toff
Turn-Off Time
90
ns
104
dB
Power Supply Performance
PSRR
Power Supply Rejection Ratio
DC, VCM = −4.5V, VS = 2.7V to 11V
84
IS
Supply Current
RL = ∞
1.35
1.6
1.9
mA
ISD
Disable Shutdown Current
DISABLE = −5V
103
140
μA
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2: Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC)
Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
Note 3: The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
Note 4: Boldface limits apply to temperature range of −40°C to 125°C
Note 5: Voltage average drift is determined by dividing the change in VOS by temperature change.
Note 6: Do not short circuit the output. Continuous source or sink currents larger than the IOUT typical are not recommended as it may damage the part.
Note 7: Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will
also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.
Note 8: Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the Statistical Quality
Control (SQC) method.
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6
LMH6618
Connection Diagram
6-Pin TSOT23
20195801
Top View
Ordering Information
Package
6-Pin TSOT23
Part Number
LMH6618MK
LMH6618MKX
Package Marking
Transport Media
1k Units Tape and Reel
AE4A
3k Units Tape and Reel
7
NSC Drawing
MK06A
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LMH6618
Typical Performance Characteristics
At TJ = 25°C, AV = +1 (RF = 0Ω), otherwise RF = 2 kΩ for AV ≠ +1,
unless otherwise specified.
Closed Loop Frequency Response for
Various Supplies
Closed Loop Frequency Response for
Various Supplies
20195831
20195816
Closed Loop Frequency Response for
Various Supplies
Closed Loop Frequency Response for
Various Supplies
20195815
20195817
Closed Loop Frequency Response for
Various Temperatures
Closed Loop Frequency Response for
Various Temperatures
20195819
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20195820
8
LMH6618
Closed Loop Gain vs. Frequency for
Various Gains
Large Signal Frequency Response
20195818
20195830
±0.1 dB Gain Flatness for Various Supplies
Small Signal Frequency Response with
Various Capacitive Load
20195832
20195826
Small Signal Frequency Response with
Capacitive Load and Various RISO
HD2 vs. Frequency and Supply Voltage
20195835
20195827
9
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LMH6618
HD3 vs. Frequency and Supply Voltage
HD2 and HD3 vs. Frequency and Load
20195871
20195836
HD2 and HD3 vs. Common Mode Voltage
HD2 and HD3 vs. Common Mode Voltage
20195873
20195872
HD2 vs. Frequency and Gain
HD3 vs. Frequency and Gain
20195875
20195874
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LMH6618
Open Loop Gain/Phase
HD2 vs. Output Swing
20195833
20195843
HD3 vs. Output Swing
HD2 vs. Output Swing
20195844
20195845
HD2 vs. Output Swing
HD3 vs. Output Swing
20195869
20195846
11
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LMH6618
HD3 vs. Output Swing
THD vs. Output Swing
20195847
20195870
Settling Time vs. Input Step Amplitude
(Output Slew and Settle Time)
Input Noise vs. Frequency
20195876
20195821
VOS vs. VOUT
VOS vs. VOUT
20195849
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20195850
12
LMH6618
VOS vs. VCM
VOS vs. VS (pnp)
20195852
20195851
VOS vs. VS (npn)
VOS vs. IOUT
20195853
20195854
VOS Distribution (pnp and npn)
IB vs. VS (pnp)
20195855
20195877
13
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LMH6618
IB vs. VS (npn)
IS vs. VS
20195857
20195856
VOUT vs. VS
VOUT vs. VS
20195858
20195859
VOUT vs. VS
Closed Loop Output Impedance vs. Frequency AV = +1
20195860
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20195822
14
LMH6618
PSRR vs. Frequency
PSRR vs. Frequency
20195838
20195837
CMRR vs. Frequency
Small Signal Step Response
20195805
20195823
Small Signal Step Response
Small Signal Step Response
20195806
20195804
15
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LMH6618
Small Signal Step Response
Small Signal Step Response
20195808
20195809
Small Signal Step Response
Small Signal Step Response
20195807
20195811
Small Signal Step Response
Small Signal Step Response
20195812
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20195810
16
LMH6618
Large Signal Step Response
Large Signal Step Response
20195813
20195814
Overload Recovery Waveform
IS vs. VDISABLE
20195824
20195861
17
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LMH6618
which will reduce the supply current to typically less than 100
µA. The DISABLE pin is “active low” and should be connected
through a resistor to V+ for normal operation. Shutdown is
guaranteed when the DISABLE pin is 0.5V below the supply
midpoint at any operating supply voltage and temperature.
In the shutdown mode, essentially all internal device biasing
is turned off in order to minimize supply current flow and the
output goes into high impedance mode. During shutdown, the
input stage has an equivalent circuit as shown in Figure 2.
Application Information
The LMH6618 is based on National Semiconductor’s proprietary VIP10 dielectrically isolated bipolar process. This device family architecture features the following:
• Complimentary bipolar devices with exceptionally high ft
(∼8GHz) even under low supply voltage (2.7V) and low
bias current.
• Common emitter push-push output stage. This
architecture allows the output to reach within millivolts of
either supply rail.
• Consistent performance from any supply voltage (2.7V 11V) with little variation with supply voltage for the most
important specifications (e.g. BW, SR, IOUT.)
• Significant power saving compared to competitive devices
on the market with similar performance.
With 3V supplies and a common mode input voltage range
that extends beyond either supply rail, the LMH6618 is well
suited to many low voltage/low power applications. Even with
3V supplies, the −3 dB BW (at AV = +1) is typically 120 MHz.
The LMH6618 is designed to avoid output phase reversal.
With input over-drive, the output is kept near the supply rail
(or as close to it as mandated by the closed loop gain setting
and the input voltage). Figure 1 shows the input and output
voltage when the input voltage significantly exceeds the supply voltages.
20195839
FIGURE 2. Input Equivalent Circuit During Shutdown
When the LMH6618 is shutdown, there may be current flow
through the internal diodes shown, caused by input potential,
if present. This current may flow through the external feedback resistor and result in an apparent output signal. In most
shutdown applications the presence of this output is inconsequential. However, if the output is “forced” by another device, the other device will need to conduct the current
described in order to maintain the output potential.
To keep the output at or near ground during shutdown when
there is no other device to hold the output low, a switch using
a transistor can be used to shunt the output to ground.
SINGLE CHANNEL ADC DRIVER
The low noise and wide bandwidth make the LMH6618 an
excellent choice for driving a 12-bit ADC. Figure 3 shows the
schematic of the LMH6618 driving an ADC121S101. The ADC121S101 is a single channel 12-bit ADC. The LMH6618 is
set up in a 2nd order multiple-feedback configuration with a
gain of −1. The −3 db point is at 500 kHz and the −0.01 dB
point is at 100 kHz. Table 1 shows the performance data of
the LMH6618 and the ADC121S101.
20195825
FIGURE 1. Input and Output Shown with CMVR Exceeded
If the input voltage range is exceeded by more than a diode
drop beyond either rail, the internal ESD protection diodes will
start to conduct. The current flow in these ESD diodes should
be externally limited.
The LMH6618 can be shutdown by connecting the
DISABLE pin to a voltage 0.5V below the supply midpoint
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18
LMH6618
20195829
FIGURE 3. LMH6618 Driving an ADC121S101
TABLE 1. Performance Data for the LMH6618 Driving an ADC121S101
Parameter
Measured Value
Signal Frequency
100 kHz
Signal Amplitude
4.5V
SINAD
71.5 dB
SNR
71.87 dB
THD
−82.4 dB
SFDR
90.97 dB
ENOB
11.6 bits
When the op amp and the ADC are using the same supply, it
is important that both devices are well bypassed. A 0.1 µF
ceramic capacitor and a 10 µF tantalum capacitor should be
located as close as possible to each supply pin. A sample
layout is shown in Figure 4. The 0.1 µF capacitors (C13 and
C6) and the 10 µF capacitors (C11 and C5) are located very
close to the supply pins of the LMH6618 and the ADC121S101.
19
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LMH6618
20195840
FIGURE 4. LMH6618 and ADC121S101 Layout
C121S705. The ADC121S705 is a fully differential 12-bit
ADC. Performance with this circuit is similar to the circuit in
Figure 3.
DIFFERENTIAL ADC DRIVER
The circuit in Figure 3 can be used to drive both inputs of a
differential ADC. Figure 5 shows the LMH6618 driving an AD-
20195842
FIGURE 5. LMH6618 Driving an ADC121S705
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20
For the example the supply voltage will be +5V.
Noise gain = 2 + 2/5V = 2.4.
RF = 2 kΩ
R1 = 2 kΩ/2 = 1 kΩ
R2 = 2 kΩ/(2.4-2) = 5 kΩ.
RG = 2 kΩ/(2.4 – 1) = 1.43 kΩ.
20195848
FIGURE 6. DC Level Shifting
4th ORDER MULTIPLE FEEDBACK LOW-PASS FILTER
Figure 7 shows the LMH6618 used as the amplifier in a multiple feedback low-pass filter. This filter is set up to have a
gain of +1 and a −3 dB point of 1 MHz. Values can be determined by using the WEBENCH® Active Filter Designer found
at amplifiers.national.com.
20195828
FIGURE 7. 4th Order Multiple Feedback Low-Pass Filter
21
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LMH6618
7.
8.
9.
10.
11.
12.
DC LEVEL SHIFTING
Often a signal must be both amplified and level shifted while
using a single supply for the op amp. The circuit in Figure 6
can do both of these tasks. The procedure for specifying the
resistor values is as follows.
1. Determine the input voltage.
2. Calculate the input voltage midpoint, VINMID = VINMIN +
(VINMAX – VINMIN)/2.
3. Determine the output voltage needed.
4. Calculate the output voltage midpoint, VOUTMID =
VOUTMIN + (VOUTMAX – VOUTMIN)/2.
5. Calculate the gain needed, gain = (VOUTMAX – VOUTMIN)/
(VINMAX – VINMIN)
6. Calculate the amount the voltage needs to be shifted
from input to output, ΔVOUT = VOUTMID – gain x VINMID.
7. Set the supply voltage to be used.
8. Calculate the noise gain, noise gain = gain + ΔVOUT/VS.
9. Set RF.
10. Calculate R1, R1 = RF/gain.
11. Calculate R2, R2 = RF/(noise gain-gain).
12. Calculate RG, RG= RF/(noise gain – 1).
Check that both the VIN and VOUT are within the voltage
ranges of the LMH6618.
The following example is for a VIN of 0V to 1V with a VOUT of
2V to 4V.
1. VIN = 0V to 1V.
2. VINMID = 0V + (1V – 0V)/2 = 0.5V.
3. VOUT = 2V to 4V.
4. VOUTMID = 2V + (4V – 2V)/2 = 3V.
5. Gain = (4V – 2V)/(1V – 0V) = 2
6. ΔVOUT = 3V – 2 x 0.5V = 2.
LMH6618
CURRENT SENSE AMPLIFIER
With it’s rail-to-rail input and output capability, low VOS, and
low IB the LMH6618 is an ideal choice for a current sense
amplifier application. Figure 8 shows the schematic of the
LMH6618 set up in a low-side sense configuration which provides a conversion gain of 2V/A. Voltage error due to VOS can
be calculated to be VOS x (1 + RF/RG) or
0.6 mV x 21 = 12.6 mV. Voltage error due to IO is IO x RF or
0.26 µA x 1 kΩ = 0.26 mV. Hence total voltage error is
12.6 mV + 0.26 mV or 12.86 mV which translates into a current error of 12.86 mV/(2 V/A) = 6.43 mA.
(1)
(2)
20195841
FIGURE 8. Current Sense Amplifier
20195865
TRANSIMPEDANCE AMPLIFIER
By definition, a photodiode produces either a current or voltage output from exposure to a light source. A Transimpedance Amplifier (TIA) is utilized to convert this low-level
current to a usable voltage signal. The TIA often will need to
be compensated to insure proper operation.
FIGURE 10. Bode Plot of Noise Gain Intersecting with Op
Amp Open-Loop Gain
Figure 10 shows the bode plot of the noise gain intersecting
the op amp open loop gain. With larger values of gain, CT and
RF create a zero in the transfer function. At higher frequencies
the circuit can become unstable due to excess phase shift
around the loop.
A pole at fP in the noise gain function is created by placing a
feedback capacitor (CF) across RF. The noise gain slope is
flattened by choosing an appropriate value of CF for optimum
performance.
Theoretical expressions for calculating the optimum value of
CF and the expected −3 dB bandwidth are:
(3)
20195862
(4)
FIGURE 9. Photodiode Modeled with Capacitance
Elements
Equation 4 indicates that the −3 dB bandwidth of the TIA is
inversely proportional to the feedback resistor. Therefore, if
the bandwidth is important then the best approach would be
to have a moderate transimpedance gain stage followed by a
broadband voltage gain stage.
Table 2 shows the measurement results of the LMH6618 with
different photodiodes having various capacitances (CPD) and
a feedback resistance (RF) of 1 kΩ.
Figure 9 shows the LMH6618 modeled with photodiode and
the internal op amp capacitances. The LMH6618 allows circuit operation of a low intensity light due to its low input bias
current by using larger values of gain (RF). The total capacitance (CT) on the inverting terminal of the op amp includes
the photodiode capacitance (C PD) and the input capacitance
of the op amp (CIN). This total capacitance (CT) plays an important role in the stability of the circuit. The noise gain of this
circuit determines the stability and is defined by:
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22
CPD
CT
CF CAL
CF USED
f −3 dB CAL
f −3 dB MEAS
Peaking
(pF)
(pF)
(pF)
(pF)
(MHz)
(MHz)
(dB)
22
24
7.7
5.6
23.7
20
0.9
47
49
10.9
10
16.6
15.2
0.8
100
102
15.8
15
11.5
10.8
0.9
222
224
23.4
18
7.81
8
2.9
Note:
GBWP = 65 MHz
CT = CPD + CIN
CIN = 2 pF
VS = ±2.5V
Figure 11 shows the frequency response for the various photodiodes in Table 2.
When analyzing the noise at the output of the TIA, it is important to note that the various noise sources (i.e. op amp
noise voltage, feedback resistor thermal noise, input noise
current, photodiode noise current) do not all operate over the
same frequency band. Therefore, when the noise at the output is calculated, this should be taken into account. The op
amp noise voltage will be gained up in the region between the
noise gain’s zero and pole (fZ and fP in Figure 10). The higher
the values of RF and CT, the sooner the noise gain peaking
starts and therefore its contribution to the total output noise
will be larger. It is obvious to note that it is advantageous to
minimize CIN by proper choice of op amp or by applying a
reverse bias across the diode at the expense of excess dark
current and noise.
20195868
FIGURE 11. Frequency Response for Various Photodiode
and Feedback Capacitors
23
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LMH6618
TABLE 2. TIA (Figure 1) Compensation and Performance Results
LMH6618
Physical Dimensions inches (millimeters) unless otherwise noted
6-Pin TSOT23
NS Package Number MK06A
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24
LMH6618
Notes
25
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LMH6618 130 MHz, 1.25 mA Rail-to-Rail Input and Output Operational Amplifier with Shutdown
Notes
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