NSC LMV841

LMV841
CMOS Input, RRIO, Wide Supply Range Operational
Amplifier
General Description
Features
The LMV841 is a low-voltage and low-power operational amplifier that operates from supply voltages from 2.7V to 12V
and has rail-to-rail input and output capability.
The LMV841 is a low offset voltage and low supply current
amplifier with MOS inputs, characteristics that make the
LMV841 ideal for sensor interface and battery powered applications.
The LMV841 is offered in the space saving 5-Pin SC70 package. This small package is an ideal solution for area constrained PC boards and portable electronics.
Unless otherwise noted, typical values at TA = 25°C, V+ = 5V
■ Space saving 5-Pin SC70 package
■ Supply voltage range 2.7V to 12V
■ Guaranteed at 3.3V, 5V and ±5V
1 mA
■ Low supply current
4.5 MHz
■ Unity gain bandwidth
100 dB
■ Open loop gain
500 μV max
■ Input offset voltage
0.3 pA
■ Input bias current
100 dB
■ CMRR
20 nV/
■ Input voltage noise
–40°C to 125°C
■ Temperature range
■ Rail-to-rail input
■ Rail-to-rail output
Applications
■
■
■
■
■
■
High impedance sensor interface
Battery powered instrumentation
High gain amplifiers
DAC buffer
Instrumentation amplifiers
Active Filters
Typical Application
Active Band-pass Filter
20168372
© 2006 National Semiconductor Corporation
201683
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LMV841 CMOS Input, RRIO, Wide Supply Range Operational Amplifier
December 2006
LMV841
Storage Temperature Range
Junction Temperature (Note 3)
Soldering Information
Infrared or Convection (20 sec)
Wave Soldering Lead Temp. (10 sec)
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance (Note 2)
Human Body Model
Machine Model
VIN Differential
Supply Voltage (V+ – V-)
Voltage at Input/Output Pins
Input Current
2 kV
200V
±300 mV
13.2V
V++0.3V, V− −0.3V
10 mA
3.3V Electrical Characteristics
Operating Ratings
−65°C to +150°C
+150°C
235°C
260°C
(Note 1)
Temperature Range (Note 3)
Supply Voltage (V+ – V−)
−40°C to +125°C
2.7V to 12V
Package Thermal Resistance (θJA (Note 3))
5-Pin SC70
334 °C/W
(Note 4)
Unless otherwise specified, all limits are guaranteed for at TA = 25°C, V+ = 3.3V, V− = 0V, VCM = V+/2, and RL > 10 MΩ to V+/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(Note 6)
Typ
(Note 5)
Max
(Note 6)
Units
8
±500
±800
μV
VOS
Input Offset Voltage
TCVOS
Input Offset Voltage Drift (Note 7)
0.5
±5
μV/°C
IB
Input Bias Current
(Notes 7, 8)
0.3
10
300
pA
IOS
Input Offset Current
CMRR
Common Mode Rejection Ratio
PSRR
40
0V ≤ VCM ≤ 3.3V
84
80
100
Power Supply Rejection Ratio
2.7V ≤ V+ ≤ 12V, VO = V+/2
86
82
100
CMVR
Input Common-Mode Voltage Range
CMRR ≥ 50 dB
–0.1
AVOL
Large Signal Voltage Gain
RL = 2 kΩ
VO = 0.3V to 3.0V
100
96
118
RL = 10 kΩ
VO = 0.2V to 3.1V
100
96
129
VO
Output Swing High,
measured from V+
Output Swing Low,
measured from V-
IO
Output Short Circuit Current
(Notes 3, 9)
dB
dB
dB
RL = 2 kΩ to V+/2
50
80
120
RL = 10 kΩ to V+/2
25
40
60
RL = 2 kΩ to V+/2
50
70
90
RL = 10 kΩ to V+/2
23
45
55
Sourcing VO = V+/2
VIN = 100 mV
25
20
30
Sinking VO = V+/2
VIN = −100 mV
25
20
30
Supply Current
0.98
SR
Slew Rate (Note 10)
GBW
Gain Bandwidth Product
Φm
Phase Margin
en
Input-Referred Voltage Noise
f = 1 kHz
20
ROUT
Open Loop Output Impedance
f = 3 MHz
70
AV = +1, VO = 2.3 VPP
10% to 90%
2
V
3.4
IS
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fA
mV
mV
mA
1.2
2
mA
2.5
V/μs
4.5
MHz
67
Deg
nV/
Ω
(Note 4)
Unless otherwise specified, all limits are guaranteed for at TA = 25°C, V+ = 5V, V− = 0V, VCM = V+/2, and RL > 10 MΩ to V+/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(Note 6)
Typ
(Note 5)
Max
(Note 6)
Units
–5
±500
±800
μV
VOS
Input Offset Voltage
TCVOS
Input Offset Voltage Drift (Note 7)
0.35
±5
μV/°C
IB
Input Bias Current
(Notes 7, 8)
0.3
10
300
pA
IOS
Input Offset Current
CMRR
Common Mode Rejection Ratio
PSRR
40
0V ≤ VCM ≤ 5V
86
80
100
Power Supply Rejection Ratio
2.7V ≤ V+ ≤ 12V, VO = V+/2
86
82
100
CMVR
Input Common-Mode Voltage Range
CMRR ≥ 50 dB
–0.2
AVOL
Large Signal Voltage Gain
RL = 2 kΩ
VO = 0.3V to 4.7V
100
96
118
RL = 10 kΩ
VO = 0.2V to 4.8V
100
96
129
VO
Output Swing High,
measured from V+
Output Swing Low,
measured from V-
IO
Output Short Circuit Current
(Notes 3, 9)
IS
Supply Current
SR
Slew Rate (Note 10)
GBW
fA
dB
dB
5.2
dB
RL = 2 kΩ to V+/2
60
100
120
RL = 10 kΩ to V+/2
30
50
70
RL = 2 kΩ to V+/2
60
90
100
RL = 10 kΩ to V+/2
27
40
50
Sourcing VO = V+/2
VIN = 100 mV
25
20
30
Sinking VO = V+/2
VIN = −100 mV
25
20
30
1.02
AV = +1, VO = 4 VPP
10% to 90%
V
mV
mV
mA
1.5
2
mA
2.5
V/μs
Gain Bandwidth Product
4.5
MHz
Φm
Phase Margin
67
Deg
en
Input-Referred Voltage Noise
f = 1 kHz
20
ROUT
Open Loop Output Impedance
f = 3 MHz
70
3
nV/
Ω
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LMV841
5V Electrical Characteristics
LMV841
±5V Electrical Characteristics
(Note 4)
Unless otherwise specified, all limits are guaranteed for at TA = 25°C, V+ = 5V, V− = –5V, VCM = 0V, and RL > 10 MΩ to VCM.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(Note 6)
Typ
(Note 5)
Max
(Note 6)
Units
VOS
Input Offset Voltage
–17
±500
±800
μV
TCVOS
Input Offset Voltage Drift (Note 7)
0.25
±5
μV/°C
IB
Input Bias Current
(Notes 7, 8)
0.3
10
300
pA
IOS
Input Offset Current
CMRR
Common Mode Rejection Ratio
PSRR
40
–5V ≤ VCM ≤ 5V
86
80
100
Power Supply Rejection Ratio
2.7V ≤ V+ ≤ 12V, VO = 0V
86
82
100
CMVR
Input Common-Mode Voltage Range
CMRR ≥ 50 dB
–5.2
AVOL
Large Signal Voltage Gain
RL = 2 kΩ
VO = –4.7V to 4.7V
100
96
118
RL = 10 kΩ
VO = –4.8V to 4.8V
100
96
129
VO
Output Swing High,
measured from V+
Output Swing Low,
measured from V-
IO
Output Short Circuit Current
(Notes 3, 9)
IS
Supply Current
SR
Slew Rate (Note 10)
GBW
fA
dB
dB
5.2
dB
RL = 2 kΩ to 0V
88
120
155
RL = 10 kΩ to 0V
40
75
95
RL = 2 kΩ to 0V
85
125
140
RL = 10 kΩ to 0V
36
50
70
Sourcing VO = 0V
VIN = 100 mV
25
20
30
Sourcing VO = 0V
VIN = −100 mV
25
20
30
1.11
AV = +1, VO = 9 VPP
10% to 90%
V
mV
mV
mA
1.7
2
mA
2.5
V/μs
Gain Bandwidth Product
4.5
MHz
Φm
Phase Margin
67
Deg
en
Input-Referred Voltage Noise
f = 1 kHz
20
ROUT
Open Loop Output Impedance
f = 3 MHz
70
nV/
Ω
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics
Tables.
Note 2: Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) FieldInduced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
Note 3: The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
Note 4: Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating
of the device.
Note 5: Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will
also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.
Note 6: Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using statistical quality
control (SQC) method.
Note 7: This parameter is guaranteed by design and/or characterization and is not tested in production.
Note 8: Positive current corresponds to current flowing into the device.
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LMV841
Note 9: Short circuit test is a momentary test.
Note 10: Number specified is the slower of positive and negative slew rates.
Connection Diagram
5-Pin SC70
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Top View
Ordering Information
Package
5-Pin SC70
Part Number
LMV841MG
LMV841MGX
Package Marking
Transport Media
1k Units Tape and Reel
A97
3k Units Tape and Reel
5
NSC Drawing
MAA05A
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LMV841
Typical Performance Characteristics
At TA = 25°C, RL = 10 kΩ, VS = 5V. Unless otherwise specified.
Offset Voltage Distribution
Offset Voltage Distribution
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Offset Voltage Distribution
VOS vs. VCM Over Temperature @ 3.3V
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VOS vs. VCM Over Temperature @ 5.0V
VOS vs. VCM Over Temperature @ ±5.0V
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20168312
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LMV841
VOS vs. Supply Voltage
VOS vs. Temperature
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20168313
DC Gain vs. VOUT
Input Bias Current vs. VCM
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20168316
Input Bias Current vs. VCM
Input Bias Current vs. VCM
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20168318
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LMV841
Supply Current vs. Supply Voltage
Sinking Current vs. Supply Voltage
20168319
20168320
Sourcing Current vs. Supply Voltage
Output Swing High vs. Supply Voltage RL = 2k
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20168322
Output Swing High vs. Supply Voltage RL = 10k
Output Swing Low vs. Supply Voltage RL = 2k
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20168324
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LMV841
Output Swing Low vs. Supply Voltage RL = 10k
Output Voltage Swing vs. Load Current
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20168326
Open Loop Frequency Response Over Temperature
Open Loop Frequency Response Over Load Conditions
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20168328
PSRR vs. Frequency
CMRR vs. Frequency
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20168331
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LMV841
Large Signal Step Response @ GAIN = 10
Small Signal Step Response @ GAIN = 1
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20168334
Small Signal Step Response @ GAIN = 10
Input Voltage Noise vs. Frequency
20168336
20168339
Closed Loop Output Impedance vs Frequency
20168343
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10
INTRODUCTION
The LMV841 is an operational amplifier with near-precision
specifications: low noise, low temperature drift, low offset and
rail-to-rail input and output.
The low supply current, a temperature range of −40°C to 125°
C, the 12V supply with CMOS input and the small SC70 package make this a unique op amp.
Possible applications include instrumentation, medical, test
equipment, audio and automotive applications.
The small SC70 package and the low supply current, 1 mA,
makes the LMV841 a perfect choice for portable electronics.
INPUT PROTECTION
The LMV841 has a set of anti-parallel diodes D1 and D2 between the input pins, as shown in Figure 1. These diodes are
present to protect the input stage of the amplifier. At the same
time, they limit the amount of differential input voltage that is
allowed on the input pins.
A differential signal larger than one diode voltage drop might
damage the diodes. The differential signal between the inputs
needs to be limited to ±300 mV or the input current needs to
be limited to ±10 mA.
Note that when the op amp is slewing, a differential input voltage exists that forward biases the protection diodes. This may
result in current being drawn from the signal source. While
this current is already limited by the internal resistors R1 and
R2 (both 130Ω), a resistor of 1 kΩ can be placed in the feedback path, or a 500Ω resistor can be placed in series with the
input signal.
20168350
FIGURE 2. Isolating Capacitive Load
REDUCING OVERSHOOT
When the output of the op amp is at its lower swing limit (i.e.
saturated near V−), rapidly rising signals can cause some
overshoot.
This overshoot can be reduced by adding a resistor from the
output to V+. Even in extreme situations at high temperatures,
a 10k resistor is sufficient to reduce the overshoot to negligible
levels.
The resistor at the output will however reduce the maximum
output swing, as would any resistive load at the output.
DECOUPLING AND LAYOUT
Care must be taken when creating the board layout for the op
amp.
For decoupling of the supply lines 10 nF capacitors are suggested to be placed as close as possible to the op amp.
For single supply, place a capacitor between V+ and V−. For
dual supplies, place one capacitor between V+ and the board
ground, and the second capacitor between ground and V−.
20168351
FIGURE 1. Protection diodes between the input pins
INPUT STAGE
The input stage of this Amplifier exists of a PMOS and an
NMOS input pair to achieve a more than rail-to-rail input
range.
For input voltages close to the negative rail, only the PMOS
pair is active. Close to the positive rail, only the NMOS pair is
active.
For intermediate signals, the transition from PMOS pair to
NMOS pair will result in a very small offset shift, which appears at approximately 1 volt from the positive rail.
To reduce this small offset shift, the amplifier is trimmed during production, resulting in an input offset voltage of less then
1mV at room temperature over the total input range.
NOISE DUE TO RESISTORS
The LMV841 has good noise specifications, and will frequently be used in low noise applications. Therefore it is important
to take in account the influence of the resistors to the total
noise contribution.
For applications with a voltage input configuration it is, in general, beneficial to keep the resistor values low. In these configurations high resistor values mean high noise levels.
However, using low resistor values will increase the power
consumption of the application. This is not always acceptable
for portable applications.
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LMV841
CAPACITIVE LOAD
The LMV841 can be connected as a non-inverting unity-gain
amplifier. This configuration is the most sensitive to capacitive
loading.
The combination of a capacitive load placed on the output of
an amplifier along with the amplifier’s output impedance creates a phase lag, which reduces the phase margin of the
amplifier. If the phase margin is significantly reduced, the response will be underdamped which causes peaking in the
transfer and when there is too much peaking the op amp might
start oscillating.
In order to drive heavier capacitive loads, an isolation resistor,
RISO, should be used, as shown in Figure 2. By using this
isolation resistor, the capacitive load is isolated from the
amplifier’s output, and hence, the pole caused by CL is no
longer in the feedback loop. The larger the value of RISO, the
more stable the output voltage will be. If values of RISO are
sufficiently large, the feedback loop will be stable, independent of the value of CL. However, larger values of RISO result
in reduced output swing and reduced output current drive.
Application Information
LMV841
To determine if the noise is acceptable for the application, use
the following formula for resistor noise :
a centre frequency of approximately 10% from the frequency
of the total filter:
C = 33 nF
R1 = 2 kΩ
R2 = 6.2 kΩ
R3 = 45 Ω
This will give for Filter A
where:
eth = Thermal noise voltage (Vrms)
k = Boltzmann constant (1.38 x 10–23 J/K)
T = Absolute temperature (K)
R = Resistance (Ω)
B = Noise bandwidth (Hz), fmax - fmin
And for filter B with C = 27 nF:
Given in an example with a resistor of 1MOhm at 25°C (298
K) over a frequency range of 100 kHz:
Bandwidth can be calculated by:
To keep the noise of the application low it might be necessary
to decrease the resistors to 100k, which will decrease the
noise to –97.8 dBV (12.8 uV).
The op amp's input-referred noise of 20 nV/
at 1 kHz is
equivalent to the noise of a 24 kΩ resistor.
For filter A this will give
ACTIVE FILTER
The rail-to-rail input and output of the LMV841, and its wide
supply voltage range makes this amplifier ideal to use in numerous applications. One of the typical applications is an
active filter as shown in Figure 3. This example is a band-pass
filter, for which the pass band is widened. This is achieved by
cascading two band-pass filters, with slightly different centre
frequencies.
and for filter B:
The response of the two filters and the combined filter is
shown in Figure 4.
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FIGURE 3. Active Filter
The centre frequency of the separate band-pass filters can be
calculated by:
20168359
In this example a filter was designed with its pass band at 10
kHz. The two separate band-pass filters are designed to have
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FIGURE 4. Active Filter Curve
12
LMV841
The filter responses of filter A and filter B are shown as the
thin lines in Figure 4, the response of the combined filter is
shown as the thick line. By shifting the centre frequencies of
the separate filters further apart, the result will be a wider
band, however positioning the centre frequencies too far
apart will result in a less flat gain within the band. For wider
bands more band-pass filters can be cascaded.
Tip: use the WEBENCH internet tools at www.national.com
for your filter application
20168352
HIGH IMPEDANCE SENSOR INTERFACE
Many sensors have high source impedances that may range
up to 10 MOhm. The output signal of sensors often needs to
be amplified or otherwise conditioned by means of an amplifier.
The input bias current of this amplifier can load the sensor’s
output and cause a voltage drop across the source resistance
as shown in Figure 5, where VIN+ = VS – IB * RS. The last term,
IB * RS, is the voltage drop across RS.
The LMV841 can be used to prevent errors introduced to the
system due to this voltage drop. The very low input bias current of the LMV841 is a must for the use with high impedance
sensors. This is to keep the error contribution by IB * RS negligibly small.
FIGURE 5. High Impedance Sensor Interface
THERMOCOUPLE AMPLIFIER
The LMV841 is also a very good choice to be used in a thermocouple amplifier application as shown in the example below. The low source impedance of the thermocouple makes
it possible to use a single differential amplifier. A differential
amplifier is used to remove common-mode noise, picked up
by the wires.
20168353
FIGURE 6. Thermocoupler Amplifier
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LMV841
Physical Dimensions inches (millimeters) unless otherwise noted
5-Pin SC70
NS Package Number MAA05A
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14
LMV841
Notes
15
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LMV841 CMOS Input, RRIO, Wide Supply Range Operational Amplifier
Notes
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