Schottky Barrier Diodes (SBD) MA2Q739 (MA739) Silicon epitaxial planar type Unit : mm For high-frequency rectification 4.4 ± 0.3 • Forward current (average) IF(AV): 0.7 A type • Reverse voltage (DC value) VR: 90 V • Allowing automatic insertion with the emboss taping Reverse voltage (DC) 2.15 ± 0.3 + 0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1 0.25 − 0.05 2 Symbol Rating Unit VR 90 V 1.4 ± 0.2 2.5 ± 0.3 ■ Features 0 to 0.05 1.2 ± 0.4 1.2 ± 0.4 + 0.4 5.0 − 0.1 Repetitive peak reverse voltage VRRM 90 IF(AV) 0.7 A IFSM 10 A Junction temperature Tj −40 to +125 °C Storage temperature Tstg −40 to +125 °C Average forward current*1 Non-repetitive peak forward surge current*2 V 1 : Anode 2 : Cathode New Mini-Power Type Package (2-pin) Marking Symbol: PE Note) *1 : With a printed-circuit board *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 90 V 1 mA Forward voltage (DC) VF IF = 0.7 A 0.8 V Terminal capacitance Ct VR = 10 V, f = 1 MHz Reverse recovery time* trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 50 pF 100 ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 10 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω 526 W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω Note) The part number in the parenthesis shows conventional part number. Schottky Barrier Diodes (SBD) MA2Q739 IF V F IR VR VF Ta 10 100 1.6 1.4 Ta = 125°C Ta = 125°C 75°C 0.1 25°C − 20°C 0.01 Reverse current IR (mA) 10 Forward voltage VF (V) Forward current IF (A) 1 1.2 1.0 0.8 0.6 IF = 700 mA 0.4 0.001 1 75°C 0.1 0.01 25°C 300 mA 0.2 10 mA 0.000 1 0 0.2 0.4 0.6 0.8 1.0 0 −40 1.2 Forward voltage VF (V) 0.001 0 IR T a 120 Terminal capacitance Ct (pF) VR = 90 V 50 V 10 V 1 0.1 0.01 40 80 200 0 20 40 60 80 100 120 Reverse voltage VR (V) 120 Ambient temperature Ta 160 (°C) 200 f = 1 MHz Ta = 25°C 300 200 100 0 0 160 Ct VR 400 10 Reverse current IR (mA) 80 Ambient temperature Ta (°C) 100 0.001 −40 40 0 20 40 60 80 100 120 Reverse voltage VR (V) 527 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR