MAAP-000074-PED000 Amplifier, Power, 8W 2.0-8.0 GHz Rev — Preliminary Datasheet Features ♦ 8 Watt Saturated Output Power Level ♦ Eutectically mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage (6-10V) Operation ♦ MSAG™ Process Description The MAAP-000074-PED000 is a 2-stage 8W power amplifier with on-chip bias networks, eutettically mounted on a 10-mil thick Copper Molybdenum (CuMo) pedestal. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each device is 100% RF tested at the die-on-pedestal assembly level to ensure performance compliance. Primary Applications M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. ♦ ♦ ♦ ♦ SatCom Radio Communications Radar Electronic Warfare Also Available in: Description Die Part Number MAAPGM0074-DIE Ceramic Package Sample Board (Die) Sample Board (Pkg) MAAP-000074-PKG001 MAAP-000074-SMB004 MAAP-000074-SMB001 Mechanical Sample (Die) MAAP-000074-MCH000 Electrical Characteristics: T B = 30°C1, Z0 = 50 Ω, VDD = 10V, IDQ = 2.1A2, Pin = 28 dBm, RG=40 Ω 1. 2. Parameter Symbol Typical Units Bandwidth f 2.0-8.0 GHz Output Power POUT 39 dBm 1-dB Compression Point P1dB 38 dBm Small Signal Gain G 14 dB Input VSWR VSWR 1.7:1 Output VSWR VSWR 2.2:1 Gate Current IGG 3.5 mA Drain Current IDD 3.5 A 2nd Harmonic, 2-4 GHz 2f 16.5 dBc 2nd Harmonic, 6-8 GHz 2f 72 dBc TB = MMIC Base Temperature Adjust VGG between –2.6 and –1.5V to achieve specified IDQ . 1 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MAAP-000074-PED000 Amplifier, Power, 8W 2.0-8.0 GHz Rev — Preliminary Datasheet Maximum Ratings3 Parameter Symbol Absolute Maximum Units Input Power PIN 33 dBm Drain Supply Voltage VDD +12.0 V Gate Supply Voltage VGG -3.0 V Quiescent Drain Current (No RF) IDQ 3.0 A Quiescent DC Power Dissipated (No RF) PDISS 33 W Junction Temperature TJ 170 °C Storage Temperature TSTG -55 to +150 °C 3. Operation beyond these limits may result in permanent damage to the part. Recommended Operating Conditions4 Characteristic Symbol Min Typ Max Unit Drain Voltage VDD 4.0 10 10 V Gate Voltage VGG -2.6 -2.2 -1.5 V Input Power PIN 28 30 dBm Thermal Resistance ΘJC 4.3 MMIC Base Temperature TB °C/W Note 5 °C 4. Operation outside of these ranges may reduce product reliability. 5. MMIC Base Temperature = 170°C — ΘJC* VDD * I DQ Power Derating Curve, Quiescent (No RF) 40 Operating Instructions 1. Apply VGG = -2.7 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 10.0 V. 3. Adjust VGG to set IDQ, (approximately @ –2.2 V). 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last. 35 Peak Power Dissipation [Watts] This device is static sensitive. Please handle with care. To operate the device, follow these steps. 30 25 20 15 10 5 0 -40 -20 0 20 40 60 80 100 120 140 160 180 Maximum Allowable Base Temperature [°C] 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MAAP-000074-PED000 Amplifier, Power, 8W 2.0-8.0 GHz Rev — Preliminary Datasheet 50 45 43 45 43 41 40 41 39 35 39 37 30 37 35 25 33 20 31 15 31 29 10 29 5 27 0 25 Pout PAE 27 25 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 P 1dB (dBm) 45 PAE (%) 35 33 9.0 6V 8V 10V 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Frequency (GHz) 6.0 6.5 7.0 7.5 8.0 8.5 9.0 Figure 2. 1dB Compression Point vs. Frequency by Drain Voltage at 25% IDSS 45 45 43 43 41 41 39 39 Psat (dBm) Psat (dBm) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VD =10V, P in=28dBm, and 25% IDSS 37 35 33 37 35 33 31 31 27 -20ºC 33ºC 93ºC 29 6V 8V 10V 29 27 25 25 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 2.0 9.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 Frequency (GHz) Frequency (GHz) Figure 4. Saturated Output Power vs. Frequency by Temperature at 10V and 25% IDSS Figure 3. Saturated Output Power vs. Frequency by Drain Voltage at 25% IDSS 42.00 22.00 18 40.00 20.00 16 38.00 18.00 36.00 16.00 5 14 4 VSWR 12 10 10V Input VSW R OutputVSWR 8 3 6 4 2 2 0 1 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 Frequency (GHz) Figure 5. Small Signal Gain and Input and Output VSWR vs. Frequency by Drain Voltage at 25% IDSS 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Output Power (dBm), PAE (%) 6 20 Gain (dB) 5.5 Frequency (GHz) 34.00 14.00 Pout PAE SSG IDS 32.00 30.00 12.00 10.00 28.00 8.00 26.00 6.00 24.00 4.00 22.00 30 40 50 60 70 80 90 100 110 120 130 140 SSG (dB), Drain Current (A) P out (dBm) All Data is at 30ºC MMIC base temperature, CW stimulus, unless otherwise noted. 2.00 150 Junction Temperature (ºC) Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and Drain Current vs. Junction Temperature at 10 V, 5.5 GHz, and 25% IDSS • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MAAP-000074-PED000 Amplifier, Power, 8W 2.0-8.0 GHz Rev — Preliminary Datasheet All Data is at 30ºC MMIC base temperature, CW stimulus, unless otherwise noted. 45 20.0 43 18.0 41 39 16.0 14.0 35 33 Gain (dB) Output Power (dBm) 37 31 29 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz 27 25 23 21 19 12.0 10.0 8.0 6.0 3 GHz 5.5 GHz 8 GHz 4.0 2.0 17 0.0 15 6 8 10 12 14 16 18 20 22 24 26 28 15 30 17 19 21 23 25 Figure 7. Output Power vs. Input Power by Frequency at 10V and 25% IDSS 29 31 33 35 37 39 41 43 Figure 8. Gain vs. Output Power by Frequency at 10V and 25% IDSS 5.0 30 28 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz 24 22 20 18 4.5 4.0 3.5 Drain Current (A) 26 PAE (%) 27 Output Power (dBm) Input Power (dBm) 16 14 12 10 3.0 2.5 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz 2.0 1.5 8 6 1.0 4 0.5 2 0 6 8 10 12 14 16 18 20 22 24 26 28 0.0 30 6 8 10 12 14 16 Input Power (dBm) 18 20 22 24 26 28 30 Input Power (dBm) Figure 9. Power Added Efficiency vs. Input Power by Frequency at 10V and 25% IDSS Figure 10. Drain Current vs. Input Power by Frequency at 10V and 25% IDSS 20.0 45 43 18.0 41 16.0 39 14.0 35 33 Gain (dB) Output Power (dBm) 37 31 29 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz 27 25 23 21 19 12.0 10.0 8.0 6.0 3 GHz 5.5 GHz 8 GHz 4.0 2.0 17 0.0 15 6 8 10 12 14 16 18 20 22 24 26 28 30 Input Power (dBm) Figure 11. Output Power vs. Input Power by Frequency at 8V and 25% IDSS 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 Output Power (dBm) Figure 12. Gain vs. Output Power by Frequency at 8V and 25% IDSS • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MAAP-000074-PED000 Amplifier, Power, 8W 2.0-8.0 GHz Rev — Preliminary Datasheet All Data is at 30ºC MMIC base temperature, CW stimulus, unless otherwise noted. 5.0 30 28 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz 24 22 PAE (%) 20 18 4.5 4.0 3.5 Drain Current (A) 26 16 14 12 10 3.0 2.5 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz 2.0 1.5 8 6 1.0 4 0.5 2 0 6 8 10 12 14 16 18 20 22 24 26 28 30 0.0 6 Input Power (dBm) 8 10 12 14 16 18 20 22 24 26 28 30 Input Power (dBm) Figure 13. Power Added Efficiency vs. Input Power by Frequency at 8V and 25% IDSS Figure 14. Drain Current vs. Input Power by Frequency at 8V and 25% IDSS 100 90 70 60 50 6 dBm 10 dBm 14 dBm 18 dBm 22 dBm 26 dBm 30 dBm 40 2 nd Harmonic (dBc) 80 30 20 10 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 Frequency (GHz) Figure 15. Second Harmonic vs. Frequency by Input Power at 10V and 25% IDSS Figure 16. Fixture used to characterize MAAPGM0074-DIE under CW stimulus. 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MAAP-000074-PED000 Amplifier, Power, 8W 2.0-8.0 GHz Rev — Preliminary Datasheet Mechanical Information Chip Size: 5.204 x 6.550 x 0.356 mm (204 x 258 x 14 mils) Chip edge to bond pad dimensions are shown to the center of the bond pad. Figure 17. Die Layout Bond Pad Dimensions Pad Pad No. Size (μm) Size (mils) RF In and Out 1 100 x 200 4x8 DC Drain Supply Voltage VD1 2 200 x 150 8x6 DC Drain Supply Voltage VD2 3 500 x 200 20 x 8 DC Gate Supply Voltage VG1 4 150 x 150 6x6 DC Gate Supply Voltage VG2 5 150 x 125 6x5 6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MAAP-000074-PED000 Amplifier, Power, 8W 2.0-8.0 GHz Rev — Preliminary Datasheet Recommended Layout and Wire Bonding Configuration GND In implementing the DC/ RF crossover shown, the following rules must applied. 1. 2. 3. 4. the DC crossovers should approach and cross the RF trace at a 90 degree angle; the printed DC traces that approach the RF line should be stopped 2 substrate heights from the RF line edge; the rated current capability of the DC crossovers should be greater than the maximum current of the device; and the wires or ribbons used to make the DC crossovers should clear the RF trace by ~ 1 substrate height. Power Supply Sequencing: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. Die Handling: Refer to Application Note AN3016. All Application Notes may be accessed by going to http://www.macom.com/ Application%20Notes/index.htm. 7 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 8W 2.0-8.0 GHz MAAP-000074-PED000 Rev — Preliminary Datasheet Next Level Assembly Instructions: Pedestal Die Attach: The following paragraphs detail recommendations and instructions for the integration of the die on pedestal (IC assembly) and mating substrates to the next level assembly. These recommendations are summarized pictorially in Figure 18. To attach the die/pedestal assembly to the next level assembly, use a high thermal conductivity silver loaded epoxy. Two epoxies are recommended for this purpose, Diemat (www.diemat.com) PNs DM6030HK and DM4030LD with bulk thermal conductivities of 60 and 15 W/m-ºC, respectively. Silver-filled epoxies with conductivities < 10 W/m-ºC are not recommended for use in attaching these IC assemblies. DM6030HK is recommended for use when the coefficient of thermal expansion (CTE) of the material to which the IC assembly is to be attached is similar to that of CuMo (CTE ~ 7ppm). A next level assembly attach material with a CTE range of 4-10ppm would be acceptable. DM4030LD is recommended when the CTE of the next level assembly material is significantly greater than CuMo, e.g, Copper and Aluminum with CTEs of 14 and 23 ppm, respectively. Bondline thickness, the as-cured thickness of the silver epoxy layer between the IC assembly and next level assembly attach surface, is a critical parameter in terms of device performance and reliability. Bondline thickness should be maintained between 1 and 1.5 mils. A bondline thickness of < 1 mil reduces the sheer strength of the mechanical attach. Bondline thicknesses > 1.5 mils impacts in an incremental fashion the junction temperature of the IC and thereby the MTTF. The pedestal thickness used in the IC assembly is set at 10 mils such that the final IC assembly thickness is ~ 14 mils making it approximately planar with a mating substrate of 15 mil alumina, a thickness commonly used through X-band. This surface planarity was an objective because it results in shorter RF bond wire lengths between the IC assembly RF I/O and the mating substrate transmission line. Long bond wires can shift the load impedance required for ideal power transfer. Shorter RF bond wires result in improved RF performance. In any nominal microelectronic manufacturing environment, the process of silver epoxy attach of substrates and IC assemblies to the next level assembly can result in variable epoxy squeeze-out or run-out at the substrate or IC assembly peripheries. This variability, if not compensated for in the design of the overall assembly, can result in a high number of assembly failures due to epoxy wicking. This wicking process can occur when a mating substrate and IC assembly are placed too close to each other. To avoid this occurrence, a designed-in 5-10 mil spacing between the IC assembly and mating substrates is recommended. 8 Wirebonding: Bond @ 160°C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.