MOTOROLA MAC223A10FP

MOTOROLA
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by MAC223FP/D
SEMICONDUCTOR TECHNICAL DATA
MAC223FP
Series
MAC223AFP
Series
Triacs
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as lighting systems,
heater controls, motor controls and power supplies; or wherever full-wave silicongate-controlled devices are needed.
ISOLATED TRIACs
THYRISTORS
25 AMPERES RMS
200 thru 800 VOLTS
• Off-State Voltages to 800 Volts
• All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability
• Small, Rugged Thermowatt Construction for Thermal Resistance and High Heat
Dissipation
• Gate Triggering Guaranteed in Three Modes (MAC223FP Series) or
Four Modes (MAC223AFP Series)
MT2
MT1
G
CASE 221C-02
STYLE 3
MAXIMUM RATINGS (TJ = 25° unless otherwise noted.)
Rating
Symbol
Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC223-4FP, MAC223A4FP
MAC223-6FP, MAC223A6FP
MAC223-8FP, MAC223A8FP
MAC223-10FP, MAC223A10FP
VDRM
On-State RMS Current (TC = +80°C) Full Cycle Sine Wave 50 to 60 Hz(2)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = 80°C,
preceded and followed by rated current)
Circuit Fusing (t = 8.3 ms)
Peak Gate Power (t
p 2 µs)
Average Gate Power (TC = +80°C, t
p 2 µs)
Peak Gate Voltage (t p 2 µs)
p 8.3 ms)
Peak Gate Current (t
RMS Isolation Voltage (TA = 25°C, Relative Humidity
Operating Junction Temperature
Storage Temperature Range
Mounting Torque
p 20%)
Value
Unit
Volts
200
400
600
800
IT(RMS)
25
Amps
ITSM
250
Amps
I2t
260
A2s
PGM
20
Watts
PG(AV)
0.5
Watt
IGM
2
Amps
VGM
±10
Volts
V(ISO)
1500
Volts
TJ
–40 to +125
°C
Tstg
–40 to +150
°C
—
8
in. lb.
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
1.2
°C/W
Thermal Resistance, Case to Sink
RθCS
2.2
°C/W
Thermal Resistance, Junction to Ambient
RθJA
60
°C/W
Motorola Thyristor Device Data
 Motorola, Inc. 1995
1
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic
Peak Blocking Current(1)
(VD = Rated VDRM, Gate Open)
Peak On-State Voltage
(ITM = 35 A Peak, Pulse Width
TJ = 25°C
TJ = 125°C
p 2 ms, Duty Cycle p 2%)
Symbol
Min
Typ
Max
Unit
IDRM
—
—
—
—
10
2
µA
mA
VTM
—
1.4
1.85
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
IGT
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(–), G(–); MT(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
(VD = Rated VDRM, TJ = 125°C, RL = 10 k)
MT(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
VGT
mA
—
—
20
30
50
75
Volts
—
—
0.2
1.1
1.3
0.4
2
2.5
—
0.2
0.4
—
Holding Current
(VD = 12 V, ITM = 200 mA, Gate Open)
IH
—
10
50
mA
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA)
tgt
—
1.5
—
µs
dv/dt
—
40
—
V/µs
dv/dt(c)
—
5
—
V/µs
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, TC = 125°C)
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 35 A Peak, Commutating
di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C)
125
115
105
2
95
85
75
0
5
10
15
20
25
PD(AV) , AVERAGE POWER DISSIPATION (WATTS)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)
1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage
applied exceeds the rated blocking voltage.
40
30
20
10
0
0
5
10
15
20
IT(RMS), RMS ON-STATE CURRENT (AMPS)
IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
25
Motorola Thyristor Device Data
VD = 12 V
RL = 100 Ω
1
0.5
0.3
0.2
0.1
–60
NORMALIZED HOLD CURRENT
NORMALIZED GATE VOLTAGE
3
2
–40
–20
0
20
40
60
80
100
120
VD = 12 V
RL = 100 Ω
1
0.5
0.3
0.2
–40
–20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Gate Trigger Current
Figure 4. Gate Trigger Voltage
ITM = 200 mA
GATE OPEN
1
0.5
0.3
0.2
–40
2
TJ, JUNCTION TEMPERATURE (°C)
2
0.1
–60
3
0.1
–60
140
–20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Hold Current
Motorola Thyristor Device Data
120
140
i TM , INSTANTANEOUS ON-STATE CURRENT (AMPS)
NORMALIZED GATE CURRENT
TYPICAL CHARACTERISTICS
120
140
200
100
50
TJ = 25°C
10
5
1
0.5
0.1
0
1
2
3
4
vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 6. Typical On-State Characteristics
3
PACKAGE DIMENSIONS
–T–
–B–
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
SEATING
PLANE
C
S
P
N
E
A
Q
H
STYLE 3:
PIN 1. MT 1
2. MT 2
3. GATE
1 2 3
–Y–
K
Z
J
L
G
R
D
3 PL
0.25 (0.010)
M
B
M
Y
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
Z
INCHES
MIN
MAX
0.680
0.700
0.388
0.408
0.175
0.195
0.025
0.040
0.340
0.355
0.140
0.150
0.100 BSC
0.110
0.155
0.018
0.028
0.500
0.550
0.045
0.070
0.049
–––
0.270
0.290
0.480
0.500
0.090
0.120
0.105
0.115
0.070
0.090
MILLIMETERS
MIN
MAX
17.28
17.78
9.86
10.36
4.45
4.95
0.64
1.01
8.64
9.01
3.56
3.81
2.54 BSC
2.80
3.93
0.46
0.71
12.70
13.97
1.15
1.77
1.25
–––
6.86
7.36
12.20
12.70
2.29
3.04
2.67
2.92
1.78
2.28
CASE 221C-02
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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4
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Motorola Thyristor Device Data
*MAC223FP/D*
MAC223FP/D