MOTOROLA Order this document by MAC320/D SEMICONDUCTOR TECHNICAL DATA MAC320 Series MAC320A Series Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. TRIACs 20 AMPERES RMS 200 thru 800 VOLTS • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Three Modes (MAC320 Series) or Four Modes (MAC320A Series) MT1 MT2 G CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TC = 25°C unless otherwise noted.) Rating Symbol Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) VDRM Unit Volts 200 400 600 800 MAC320-4, MAC320A4 MAC320-6, MAC320A6 MAC320-8, MAC320A8 MAC320-10, MAC320A10 Peak Gate Voltage Value VGM 10 Volts IT(RMS) 20 Amp Peak Surge Current (One Full Cycle, 60 Hz, T C = +75°C) preceded and followed by rated current ITSM 150 Amp Peak Gate Power (T C = +75°C, Pulse Width = 2 µs) PGM 20 Watts PG(AV) 0.5 Watt IGM 2 Amp TJ –40 to +125 °C Tstg –40 to +150 °C Symbol Max Unit RθJC 1.8 °C/W On-State Current RMS (TC = +75°C) (Full Cycle, Sine Wave, 50 to 60 Hz) Average Gate Power (T C = +75°C, t = 8.3 ms) Peak Gate Current Operating Junction Temperature Range Storage Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Peak Blocking Current (VD Rated VDRM, Gate Open) TJ = 25°C TJ = +125°C Peak On-State Voltage (Either Direction) (ITM = 28 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle VTM p 2%) Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2 (+), G(+); MT2 (+), G(–); MT2 (–), G(–) MT2 (–), G(+) “A” SUFFIX ONLY IGT Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2 (+), G(+); MT2 (+), G(–); MT2 (–), G(–) MT2 (–), G(+) “A” SUFFIX ONLY (Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ =+110°C) MT2 (+), G(+); MT2 (–), G(–); MT2 (+), G(–); MT2 (–), G(+) “A” SUFFIX ONLY VGT Typ Max Unit — — — — 10 2 µA mA — 1.4 1.7 Volts mA — — — — 50 75 — — 0.9 1.4 2 2.5 0.2 0.2 — — — — Volts Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 200 mA) IH — 6 40 mA Turn-On Time (VD = Rated VDRM, ITM = 28 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) t gt — 1.5 — µs dv/dt(C) — 5 — V/µs Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 28 A, Commutating di/dt = 10 A/ms, Gate Unenergized, TC = +75°C) FIGURE 1 — RMS CURRENT DERATING FIGURE 2 — ON-STATE POWER DISSIPATION 130 40 120 PD(AV) , AVERAGE POWER (WATT) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C) Min IDRM α = 30° 60° 110 90° 100 90 80 α 70 α 2 dc α = Conduction Angle 60 50 180° 0 2.0 4.0 6.0 8.0 10 12 14 16 IT(RMS), RMS ON-STATE CURRENT (AMP) 18 20 α 35 α 30 90° α = Conduction Angle 25 180° dc 20 15 60° α = 30° 10 5.0 0 0 2.0 4.0 6.0 8.0 10 12 14 16 IT(RMS), RMS ON-STATE CURRENT (AMP) 18 20 Motorola Thyristor Device Data FIGURE 5 — MAXIMUM ON-STATE CHARACTERISTICS 3 100 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 2 70 50 125°C 1 20 0.7 0.5 0.3 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) FIGURE 4 — TYPICAL GATE TRIGGER CURRENT I GTM , GATE TRIGGER CURRENT (NORMALIZED) TJ = 25°C 30 3 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 2 i TM , INSTANTANEOUS FORWARD CURRENT (AMP) VGTM , GATE TRIGGER VOLTAGE (NORMALIZED) FIGURE 3 — TYPICAL GATE TRIGGER VOLTAGE 10 7 5 3 2 1 0.7 0.5 1 0.3 0.7 0.2 0.5 0.1 0.3 –60 –40 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE(°C) Motorola Thyristor Device Data 120 140 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4 vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 3 FIGURE 6 — TYPICAL HOLDING CURRENT FIGURE 7 — MAXIMUM ON-REPETITIVE SURGE CURRENT 300 GATE OPEN APPLIES TO EITHER DIRECTION 2 TSM , PEAK SURGE CURRENT (AMP) I H , HOLDING CURRENT (NORMALIZED) 3 1 0.7 0.5 0.3 –60 200 100 70 50 TC = 80°C f = 60 Hz Surge is preceded and followed by rated current 30 –40 –20 0 20 40 60 80 100 120 1 140 2 TJ, JUNCTION TEMPERATURE (°C) 3 5 NUMBER OF CYCLES 7 10 FIGURE 8 — THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5 0.2 ZθJC(t) = r(t) • RθJC 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1k 2k 5k 10 k t, TIME (ms) 4 Motorola Thyristor Device Data PACKAGE DIMENSIONS –T– B F T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C S 4 Q A STYLE 4: PIN 1. 2. 3. 4. U 1 2 3 H MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 K Z R L V J G D DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.39 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 N CASE 221A-04 (TO–220AB) Motorola Thyristor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 ◊ Motorola Thyristor Device Data *MAC320/D* MAC320/D