MOTOROLA Order this document by MAC321/D SEMICONDUCTOR TECHNICAL DATA MAC321 Series Triacs Silicon Bidirectional Thyristors . . . designed for full-wave ac control applications primarily in industrial environments needing noise immunity. • Guaranteed High Commutation Voltage dv/dt — 500 V/µs Min @ TC = 25°C • High Blocking Voltage — VDRM to 800 V • Photo Glass Passivated Junction for Improved Power Cycling Capability and Reliability TRIACs 20 AMPERES RMS 200 thru 800 VOLTS MT2 MT1 G CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TC = 25°C unless otherwise noted.) Rating Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C, 1/2 Sine Wave 50 to 60 Hz, Open Gate) MAC321-4 MAC321-6 MAC321-8 MAC321-10 Peak Gate Voltage On-State Current RMS (TC = +75°C Full Cycle Sine Wave 50 to 60 Hz) Peak Surge Current (One Full Cycle, 60 Hz, T C = +75°C preceded and followed by Rated Current) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power (T C = +75°C, Pulse Width = 2.0 µs) Average Gate Power (T C = +75°C, t = 8.3 ms) Peak Gate Current Operating Junction Temperature Range Storage Temperature Range Symbol Value VDRM Unit Volts 200 400 600 800 VGM 10 Volts IT(RMS) 20 Amp ITSM 150 Amp I2t 93 A2s PGM 20 Watts PG(AV) 0.5 Watt IGM 2.0 Amp TJ –40 to +125 °C Tstg –40 to +150 °C Symbol Max Unit RθJC 1.8 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Peak Blocking Current (VD = Rated VDRM, Gate Open) Min Typ Max Unit — — — — 10 2.0 µA mA — 1.4 1.7 Volts IDRM TJ = 25°C TJ = +125°C Peak On-State Voltage (Either Direction) (ITM = 28 A Peak; Pulse Width 2.0 ms, Duty Cycle p VTM p 2.0%) Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) IGT Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) (Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C) MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) VGT mA — — — — — — 100 100 100 Volts — — — — — — 2.0 2.0 2.0 0.2 — — Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 200 mA) IH — — 100 mA Turn-On Time (VD = Rated VDRM, ITM = 28 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2.0 µs) tgt — 1.5 — µs Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open) TJ = 25°C TJ = +125°C dv/dt(s) V/µs 500 200 — — — — 130 40 120 PD(AV) , AVERAGE POWER (WATT) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C) TYPICAL CHARACTERISTICS α = 30° 60° 90° 110 100 90 80 α 70 α 0 2 4 6 8 10 12 14 16 IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 1. RMS Current Derating 2 dc α = CONDUCTION ANGLE 60 50 180° 18 20 α 35 α 30 90° α = CONDUCTION ANGLE 25 180° dc 20 15 60° α = 30° 10 5 0 0 2 4 6 8 10 12 14 16 IT(RMS), RMS ON-STATE CURRENT (AMP) 18 20 Figure 2. On-State Power Dissipation Motorola Thyristor Device Data 3 100 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 70 2 50 125°C 20 0.7 0.5 0.3 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 3. Typical Gate Trigger Voltage I GTM , GATE TRIGGER CURRENT (NORMALIZED) TJ = 25°C 30 1 3 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 2 i TM , INSTANTANEOUS FORWARD CURRENT (AMP) VGTM , GATE TRIGGER VOLTAGE (NORMALIZED) 10 7 5 3 2 1 0.7 0.5 1 0.3 0.7 0.2 0.5 0.1 0.3 –60 –40 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE(°C) 120 0.4 140 1 0.7 0.5 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Typical Holding Current Motorola Thyristor Device Data 2.4 2.8 3.2 3.6 4 4.4 200 100 70 50 TC = 80°C f = 60 Hz SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 30 –20 2 300 TSM , PEAK SURGE CURRENT (AMP) I H , HOLDING CURRENT (NORMALIZED) GATE OPEN APPLIES TO EITHER DIRECTION –40 1.6 Figure 5. Maximum On-State Characteristics 2 0.3 –60 1.2 vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 4. Typical Gate Trigger Current 3 0.8 120 140 1 2 3 5 NUMBER OF CYCLES 7 10 Figure 7. Maximum On-Repetitive Surge Current 3 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5 0.2 ZθJC(t) = r(t) • RθJC 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1k 2k 5k 10 k t, TIME (ms) Figure 8. Thermal Response 4 Motorola Thyristor Device Data PACKAGE DIMENSIONS –T– B F T SEATING PLANE C S 4 Q STYLE 4: PIN 1. 2. 3. 4. A U 1 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. H K Z R L V J G D MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.39 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 N CASE 221A-04 (TO–220AB) Motorola Thyristor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 ◊ Motorola Thyristor Device Data *MAC321/D* MAC321/D