RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 30W, 26V 5/14/04 MAPLST1820-030CF Preliminary Package Style Features Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier applications Q Q Q Q Q 30W CW Output Power at P1dB 13dB Gain at P1dB 45% Drain Efficiency at P1dB 10:1 VSWR Ruggedness (CW @ 30W, 26V, 1900MHz) Internal input and output matching P-237 Maximum Ratings Parameter Symbol Rating Units Drain—Source Voltage VDSS 65 Vdc Gate—Source Voltage VGS 20 Vdc ID 10 Adc PD 97 W Storage Temperature TSTG -40 to +150 °C Junction Temperature TJ +200 °C Symbol Max Unit RΘJC 1.8 ºC/W Drain Current — Continuous Total Power Dissipation @ TC = 25 °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 1800 — 2000 MHz, 30W, 26V MAPLST1820-030CF 5/14/04 Preliminary Characteristic DC CHARACTERISTICS @ 25ºC Characteristic Drain-Source Breakdown Voltage GS = 0 Vdc, ID = 20 µAdc) OFF(V CHARACTERISTICS Symbol Min Symbol Min V(BR)DSS 65 Typ Max Unit Typ — Max — Unit Vdc Zero Gate Voltage Drain Leakage Current 26 Vdc, VGS (VDS DS = 65 GS = 0) IDSSIDSS —— —— 100 10 µAdc µAdc Gate—Source Leakage Zero Gate Voltage DrainCurrent Leakage Current (VGS == 26 5 Vdc, VVDS ==0)0) (V Vdc, DS GS IDSSIGSS —— —— 11 µAdc µAdc Gate Threshold Voltage Gate—Source Leakage Current (VDS = 10 Vdc, ID = 20 mA) (VGS = 5 Vdc, VDS = 0) Drain-Source On-Voltage ON CHARACTERISTICS (VGS = 10 Vdc, ID = 1 A) VGS(th) IGSS — 2 2.6 — 4 1 Vdc µAdc VDS(on) — 0.32 — Vdc Gm — 1.6 — S Input Capacitance (Capacitance includes internal matching capacitors) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Ciss — 50 — pF Output Capacitance DYNAMIC CHARACTERISTICS (1) Coss — 32 — pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss — 1.4 — pF Two-Tone Common-Source Amplifier Power Gain (VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA, f1 = 1990.0 MHz, f2 = 1990.1 MHz) Gps 12 13 — dB Two-Tone Drain Efficiency (VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA, f1 = 1990.0 MHz, f2 = 1990.1 MHz) EFF (ŋ) — 33 — % Two-Tone Common-Source Amplifier Power Gain (VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA, f1 = 1990.0 MHz, f2 = 1990.1 MHz) IMD — -30 — dBc Two-Tone Common-Source Amplifier Power Gain (VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Gps 12 13 — dB Two-Tone Drain Efficiency (VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) EFF (ŋ) — 33 — % Two-Tone Intermodulation Distortion (VDS = 26 Vdc, POUT = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IMD — -30 -28 dBc Forward Transconductance (VGS = 10 Vdc, ID = 1 A) DYNAMIC CHARACTERISTICS @ 25ºC (VDS = 26 Vdc, VGS = 0, f = 1 MHz) RF FUNCTIONAL TESTS TESTS @ (In M/A-COM Fixture) FUNCTIONAL (In25ºC M/A-COM Test Test Fixture) (2) Output VSWR Tolerance (VDD = 26 Vdc, POUT = 30 W, IDQ = 300 mA, f = 1900 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test 2 RF Power LDMOS Transistor, 1800 — 2000 MHz, 30W, 26V MAPLST1820-030CF 5/14/04 Preliminary C1,C2 C3,C10 C4 C5,C11 C6,C15 C7 C8 C12 C13 Z1-Z8 Electrolytic Capacitor, 470 µF Ceramic Chip Capacitor, 10 pF Ceramic Chip Capacitor, 0.7 pF Ceramic Chip Capacitor, 5.1 pF Ceramic Chip Capacitor, 0.1 µF Ceramic Chip Capacitor, 1.2 pF Ceramic Chip Capacitor, 0.6 pF Ceramic Chip Capacitor, 91 pF Electrolytic Capacitor, 22 µF Distributed Microstrip Element J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1 Inductor, 8 nH, CoilCraft A03T L2,L3,L5,L6,L7 Inductor, Ferrite Bead, Fair Rite 2743019477 L4 Inductor, 28 µH, CoilCraft A08T P1,P2 Connector, AMP 640457-4 Q1 Transistor, MAPLST1920-030WF R1 Chip Resistor, 3.7 Ohm R2, R3 Chip Resistor, 12 Ohm R4,R5,R6 Chip Resistor, 10 Ohm PC Board (74350126-01), Arlon Woven Glass Teflon .030” Thick, Er=2.54, 2 Oz Copper Both Sides Figure 1. 1930—1990 MHz Test Fixture Schematic Figure 2. 1930—1900 MHz Test Fixture Component Layout 3 RF Power LDMOS Transistor, 1800 — 2000 MHz, 30W, 26V MAPLST1820-030CF 5/14/04 Preliminary -45 Efficiency 16 -50 ACPR 885kHz 14 -55 Gain 12 -60 10 ACPR 1.98 MHz 8 1.9 1.92 1.94 1.96 1.98 Frequency (GHz) 2 -65 Gain (dB), Efficiency (%) 18 25 IMD (dBc) IM3 (dBc) -60 -50 10 400 mA 200 mA -60 ACPR 885 kHz 5 -70 Nd ACPR 1.98 MHz 15 20 25 30 P(ave) dBm 35 -80 40 VDD = 26V Iq = 300mA f = 1.96 GHz, 100kHz tone spacing -30 150 mA -50 -55 Gain -20 VDD = 26V, 1.96 GHz Two tones, 100 kHz spacing -35 -45 15 Graph 2. CDMA ACPR, Power Gain and Drain Efficiency vs. Output Power -30 -40 -40 10 -20 -25 20 0 -70 2.02 Graph 1. Class AB Broadband Circuit Performance -30 Vdd = 26V, Iq = 350mA f = 1.96 GHz IS-95 9 Channels Forward ACPR (dBc) -40 VDD = 26V, Iq = 350mA, POUT=(36dBm) IS-95, 9 channels Forward ACPR (dBc) Gain (dB), Efficiency (%) 20 350 mA -40 -50 IM3 IM5 -60 -70 250 mA 300 mA IM7 -80 24 20 22 24 26 28 30 32 34 36 38 40 42 44 46 26 28 30 34 36 38 40 42 44 46 P(ave) dBm POUT (dBm PEP) Graph 3. Intermodulation Distortion vs. Output Power 14 13.5 13 12.5 Gain (dB) 32 12 11.5 11 Graph 4. Intermodulation Distortion Products vs. Output Power 400 mA 350 mA 300 mA 250 mA 200 mA 150 mA 10.5 10 9.5 VDD = 26V, 1.96 GHz Two tones, 100 kHz spacing 9 20 22 24 26 28 30 32 34 36 38 40 42 44 46 POUT(dBm) PEP Graph 5. Power Gain versus Output Power 4 RF Power LDMOS Transistor, 1800 — 2000 MHz, 30W, 26V MAPLST1820-030CF 5/14/04 Preliminary Package Dimensions 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020