Dual General Purpose Transistors MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in one package, these devices are ideal for low–power surface mount applications where board space is at a premium. • h FE, 100–300 • Low VCE(sat) , 3 0.4 V • Simplifies Circuit Design • Reduces Board Space See Table • Reduces Component Count • Available in 8 mm, 7–inch/3,000 Unit Tape and Reel 6 5 4 1 2 3 SOT–363/SC–88 CASE 419B STYLE 1 6 6 5 6 4 Q2 5 Q2 Q1 5 Q2 Q1 1 1 2 1 3 MBT3904DW1T1 4 4 3 2 Q1 3 2 MBT3946DW1T1 MBT3906DW1T1 *Q 1 same as MBT3906DW1T1 Q 2 same as MBT3904DW1T1 MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Voltage Unit V CEO MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Collector–Base Voltage MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Emitter–Base Voltage MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Collector Current -Continuous MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Electrostatic Discharge V 40 –40 V CBO V 60 –40 V V EBO 6.0 –5.0 IC ESD mAdc 200 –200 HBM>16000, MM>2000 V THERMAL CHARACTERISTICS Characteristic Total Device Dissipation(1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature ORDERING INFORMATION Symbol Max Unit Device Package Shipping MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 SOT–363 SOT–363 SOT–363 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel PD 150 mW R θJA 833 °C/W T J , T stg –55 to +150 °C 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. MBT3904–1/12 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (2) V (BR)CEO (I C = 1.0 mAdc, I B = 0) MBT3904DW1T1 (NPN) (I C = –1.0 mAdc, I B = 0) MBT3906DW1T1 (PNP) Collector–Base Breakdown Voltage V (BR)CBO (I C = 10 µAdc, I E = 0) MBT3904DW1T1 (NPN) (I C = –10 µAdc, I E = 0) MBT3906DW1T1 (PNP) Emitter–Base Breakdown Voltage V (BR)EBO (I E = 10 µAdc, I C = 0) MBT3904DW1T1 (NPN) (I E = –10 µAdc, I C = 0) MBT3906DW1T1 (PNP) Base Cutoff Current I BL (V CE = 30 Vdc, V EB = 3.0 Vdc) MBT3904DW1T1 (NPN) (V CE = –30 Vdc, V EB = –3.0 Vdc) MBT3906DW1T1 (PNP) Collector Cutoff Current I CEX (V CE = 30 Vdc, V EB = 3.0 Vdc) MBT3904DW1T1 (NPN) (V CE = –30 Vdc, V EB = –3.0 Vdc) MBT3906DW1T1 (PNP) ON CHARACTERISTICS (2) DC Current Gain h FE (I C = 0.1 mAdc, V CE = 1.0 Vdc) MBT3904DW1T1 (NPN) (I C = 1.0 mAdc, V CE = 1.0 Vdc) (I C = 10 mAdc, V CE = 1.0 Vdc) (I C = 50 mAdc, V CE = 1.0 Vdc) (I C = 100 mAdc, V CE = 1.0 Vdc) (I C = –0.1 mAdc, V CE = –1.0 Vdc) MBT3906DW1T1 (PNP) (I C = –1.0 mAdc, V CE = –1.0 Vdc) (I C = –10 mAdc, V CE = –1.0 Vdc) (I C = –50 mAdc, V CE = –1.0 Vdc) (I C = –100 mAdc, V CE = –1.0 Vdc) Collector–Emitter Saturation Voltage V CE(sat) (I C = 10 mAdc, I B = 1.0 mAdc) MBT3904DW1T1 (NPN) (I C = 50 mAdc, I B = 5.0 mAdc) (I C = –10 mAdc, I B = –1.0 mAdc) MBT3906DW1T1 (PNP) (I C = –50 mAdc, I B = –5.0 mAdc) Base–Emitter Saturation Voltage V BE(sat) (I C = 10 mAdc, I B = 1.0 mAdc) MBT3904DW1T1 (NPN) (I C = 50 mAdc, I B = 5.0 mAdc) (I C = –10 mAdc, I B = –1.0 mAdc) MBT3906DW1T1 (PNP) (I C = –50 mAdc, I B = –5.0 mAdc) Min Max 40 –40 — — 60 –40 — — 6.0 –5.0 — — — — 50 –50 — — 50 –50 40 70 100 60 30 60 80 100 60 30 — — — — — — — — — — — — — — 0.2 0.3 – 0.25 –0.4 0.65 — –0.65 — 0.85 0.95 –0.85 –0.95 300 — 250 — — — 4.0 4.5 — — 8.0 10.0 Unit Vdc Vdc Vdc nAdc nAdc Vdc Vdc Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 10 mAdc, V CE = 20 Vdc, MBT3904DW1T1 (NPN) f = 100 MHz) (I C = –10 mAdc, V CE = –20 Vdc, MBT3906DW1T1 (PNP) f = 100 MHz) Output Capacitance (V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz) MBT3904DW1T1 (NPN) (V CB = –5.0 Vdc, I E = 0, MBT3906DW1T1 (PNP) f = 1.0 MHz) Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) MBT3904DW1T1 (NPN) (V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz) MBT3906DW1T1 (PNP) 2. Pulse Test: Pulse Width < 300 ms; Duty Cycle< 2.0%. fT MHz C obo pF C ibo pF MBT3904–2/12 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Input Impedance (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) Small–Signal Current Gain (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) Output Admittance (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) Noise Figure (V CE = 5.0 Vdc, I C = 100 µAdc, R S = 1.0 k W, f = 1.0 kHz) (V CE = –5.0 Vdc, I C = –100 µAdc, R S = 1.0 k W, f = 1.0 kHz) Symbol h ie MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Min Max 1.0 2.0 10 12 X 10 –4 h re MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) 0.5 0.1 8.0 10 100 100 400 400 1.0 3.0 40 60 MBT3904DW1T1 (NPN) — 5.0 MBT3906DW1T1 (PNP) — 4.0 — — — — — — — — 35 35 35 35 200 225 50 70 h fe MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) — µmhos h oe MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Unit kΩ NF dB SWITCHING CHARACTERISTICS Delay Time (V CC = 3.0 Vdc, V BE = –0.5 Vdc) (V CC = –3.0 Vdc, V BE = 0.5 Vdc) Rise Time (I C = 10 mAdc, I B1 = 1.0 mAdc) (I C = –10 mAdc, I B1 = –1.0 mAdc) Storage Time (V CC = 3.0 Vdc, I C = 10 mAdc) (V CC = –3.0 Vdc, I C = –10 mAdc) Fall Time (I B1 = I B2 = 1.0 mAdc) (I B1 = I B2 = –1.0 mAdc) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) td tr ts tf ns ns ns ns MBT3904–3/12 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 MBT3904DW1T1 (NPN) DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS T J = 25°C T J = 125°C 10 5000 3000 2000 5.0 Q, CHARGE (pC) CAPACITANCE (pF) 7.0 3.0 2.0 1000 700 500 300 200 100 1.0 0.1 70 50 0.2 0.3 0.5 0.71.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REVERSE BIAS VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Capacitancere Figure 4. Charge Data 200 MBT3904–4/12 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 MBT3904DW1T1 (NPN) 500 300 300 200 200 t r , RISE TIME (ns) 500 TIME(ns) 100 70 50 30 20 70 50 30 20 10 10 7 7 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 200 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Rise Time 500 500 300 300 200 200 t f , FALL TIME (ns) t `s , STORAGE TIME(ns) 100 100 70 50 30 20 100 70 50 30 20 10 10 7 7 5 200 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 200 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time 200 TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS 12 14 10 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) (V = 5.0 Vdc, T = 25°C, Bandwidth = 1.0 Hz) 8 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 10 8 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 f,FREQUENCY (kHz) R S , SOURCE RESISTANCE (kΩ) Figure 9. Noise Figure Figure 10. Noise Figure 100 MBT3904–5/12 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 MBT3904DW1T1 (NPN) h PARAMETERS (V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C) h oe , OUTPUT ADMITTANCE ( µmhos) 200 100 70 50 30 0.3 0.5 1.0 2.0 3.0 5.0 10 20 10 5 2 1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 I C , COLLECTOR CURRENT (mA) Figure 11. Current Gain Figure 12. Output Admittance 10 5.0 2.0 1.0 0.5 0.2 0.2 50 I C , COLLECTOR CURRENT (mA) 20 0.1 100 0.1 , VOLTAGE FEEDBACK RATIO (x 10–4) 0.2 re h ie , INPUT IMPEDANCE (k OHMS) 0.1 0.3 0.5 1.0 2.0 3.0 5.0 10 h h fe , CURRENT GAIN 300 10 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio 10 MBT3904–6/12 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 h FE , DC CURRENT GAIN (NORMALIZED) MBT3904DW1T1 (NPN) TYPICAL STATIC CHARACTERISTICS 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C , COLLECTOR CURRENT (mA) h FE , DC CURRENT GAIN (NORMALIZED) Figure 15. DC Current Gain 1.0 0.8 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 5.0 10 I B , BASE CURRENT (mA) 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 I C , COLLECTOR CURRENT (mA) Figure 17. “ON” Voltages 10 θ V , TEMPERATURE COEFFICIENTS (mV/ °C) Figure 16. Collector Saturation Region 1.0 0.5 0 –0.5 –1.0 –1.5 –2.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I C , COLLECTOR CURRENT (mA) Figure 18. Temperature Coefficients MBT3904–7/12 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 MBT3906DW1T1 (PNP) * Total shunt capacitance of test jig and connectors Figure 19. Delay and Rise Time Figure 20. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS T J = 25°C T J = 125°C 10 5000 3000 2000 5.0 Q, CHARGE (pC) CAPACITANCE (pF) 7.0 3.0 2.0 1000 700 500 300 200 100 70 50 0.2 0.3 0.5 0.71.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REVERSE BIAS VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 21. Capacitancere Figure 22. Charge Data 500 500 300 300 200 200 t f , FALL TIME (ns) TIME(ns) 1.0 0.1 100 70 50 30 20 100 70 50 30 20 10 10 7 7 5 200 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) Figure 23. Turn–On Time 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C , COLLECTOR CURRENT (mA) Figure 24. Fall Time MBT3904–8/12 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 MBT3906DW1T1 (PNP) TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V = –5.0 Vdc, T = 25°C, Bandwidth = 1.0 Hz) 12 10 4.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.0 3.0 2.0 1.0 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 8 6 4 2 0 0.1 100 0.2 0.4 1.0 2.0 4.0 10 20 40 f,FREQUENCY (kHz) R S , SOURCE RESISTANCE (kΩ) Figure 25. Noise Figure Figure 26. Noise Figure 100 h PARAMETERS (V CE = –10 Vdc, f = 1.0 kHz, T A = 25°C) h oe , OUTPUT ADMITTANCE ( µmhos) 200 100 70 50 30 0.3 0.5 1.0 2.0 3.0 5.0 10 20 10 5 2 1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 I C , COLLECTOR CURRENT (mA) Figure 27. Current Gain Figure 28. Output Admittance 10 5.0 2.0 1.0 0.5 0.2 0.2 50 I C , COLLECTOR CURRENT (mA) 20 0.1 100 0.1 , VOLTAGE FEEDBACK RATIO (x 10–4) 0.2 re h ie , INPUT IMPEDANCE (k OHMS) 0.1 0.3 0.5 1.0 2.0 3.0 5.0 10 h h fe , CURRENT GAIN 300 10 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 29. Input Impedance Figure 30. Voltage Feedback Ratio 10 MBT3904–9/12 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 h FE , DC CURRENT GAIN (NORMALIZED) MBT3906DW1T1 (PNP) TYPICAL STATIC CHARACTERISTICS 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C , COLLECTOR CURRENT (mA) h FE , DC CURRENT GAIN (NORMALIZED) Figure 31. DC Current Gain 1.0 0.8 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 80 100 5.0 7.0 10 I B , BASE CURRENT (mA) 1.0 V, VOLTAGE (VOLTS) 0.8 0.6 0.4 0.2 0 1.0 2.0 5.0 10 20 50 100 I C , COLLECTOR CURRENT (mA) Figure 33. “ON” Voltages 200 θ V , TEMPERATURE COEFFICIENTS (mV/ °C) Figure 32. Collector Saturation Region 1.0 0.5 0 –0.5 –1.0 –1.5 –2.0 0 20 40 60 120 140 160 180 200 I C , COLLECTOR CURRENT (mA) Figure 34. Temperature Coefficients MBT3904–10/12