< High-power GaAs FET (small signal gain stage) > MGF0909A L & S BAND / 6W non - matched DESCRIPTION OUTLINE DRAWING The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. Unit : m illim eters FEATURES ① 4.4+0/-0.3 2MIN High output power P1dB=38.0dBm(TYP.) @f=2.3GHz High power gain GLp=11.0dB(TYP.) @f=2.3GHz High power added efficiency add=45%(TYP.) @f=2.3GHz,P1dB Hermetic Package ② 2MIN ② φ2.2 0.6±0.2 APPLICATION For L/S Band power amplifiers ③ QUALITY GG RECOMMENDED BIAS CONDITIONS 5.0 Rg=100 0.1 Ids=1.3A Symbol VGSO (Ta=25C) Parameter Gate to sourcebreakdown voltage VGDO Gate to drain breakdown voltage 9.0±0.2 Ratings Unit -15 V -15 V 5 A ID Drain current IGR Reverse gate current -15 mA IGF Forward gate current 31.5 mA PT Total power dissipation 27.3 W Tch Cannel temperature 175 C Tstg Storage temperature -65 to +175 C Electrical characteristics Symbol 0.65 Absolute maximum ratings 14.0 (1) GATE (2) SOURCE (FLANGE) (3) DRAIN GF-7 (Ta=25C) Parameter Test conditions Limits Unit Min. Typ. Max. IDSS Saturated drain current VDS=3V,VGS=0V - -- 5.0 A VGS(off) Gate to source cut-off voltage VDS=3V,ID=10mA -2.0 - -5.0 V gm Transconductance VDS=3V,ID=1.3A - 1.5 - S P1dB Output power 1dB Compression P VDS=10V,ID=1.3A,f=2.3GHz 37.0 38.0 - dBm add Power added Efficiency *1 *1:Po=P1dB - 45 - % GLP Linear Power Gain *2 *2:Pi=22dBm 10.0 11.0 - dB Rth(ch-c) Thermal Resistance - - 9 C/W *1:Channel to case / *1 Vf Method Above parameters, ratings, limits are subject to change. Publication Date : Apr., 2011 1 1.9±0.4 1.65 Vds=10V < High-power GaAs FET (small signal gain stage) > MGF0909A L & S BAND / 6W non - matched MGF0909A TYPICAL CHARACTERISTICS Tc=0/25/50/75deg.C TC=25deg TC=75deg 45 90 40 80 35 70 Po 30 60 25 50 GLP(dB) PAE 20 40 15 30 GP 10 20 5 10 0 0 0 10 20 Pin (dBm) Publication Date : Apr., 2011 2 30 40 PAE (%) Pout(dBm) TC= 0deg TC= 5 0 de g < High-power GaAs FET (small signal gain stage) > MGF0909A L & S BAND / 6W non - matched Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials •These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. •Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. •All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/). •When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. •Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : Apr., 2011 3