MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters OUTLINE DRAWING 4MIN. package 4MIN. 1 assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. 0.5±0.15 FEATURES • High output power at 1dB gain compression P1dB=21.8dBm(TYP.) 2 @f=8GHz 2 • High linear power gain GLP=8dB(TYP.) @f=8GHz 0.5±0.15 APPLICATION 3 S to X band medium-power amplifiers and oscillators. 2.5±0.2 QUALITY GRADE • GG RECOMMENDED BIAS CONDITIONS • VDS=6V • ID=100mA 1 GATE • Refer to Bias Procedure 2 SOURCE 3 DRAIN GD-10 ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol VGDO VGSO ID IGR IGF PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature Ratings *1 -8 -8 250 -0.6 1.5 1.2 175 -65 to +175 Unit V V mA mA mA W ˚C ˚C *1:TC=25˚C ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol V(BR)GDO V(BR)GSO IGSS IDSS VGS(off) gm GLP P1dB Rth(ch-c) Parameter Test conditions Gate to drain breakdown voltage IG=-200µA Gate to source breakdown voltage IG=-200µA Gate to source leakage current VGS=-3V,VDS=0V VGS=0V,VDS=3V Saturated drain current Gate source cut-off voltage VDS=3V,ID=100µA Transconductance VDS=3V,ID=100mA VDS=6V,ID=100mA,f=8GHz Linear power gain Output power at 1dB gain compression Thermal resistance VDS=6V,ID=100mA,f=8GHz *1 ∆Vf method Min -8 -8 – 150 -1.5 70 6 Limits Typ – – – 200 – 90 8 Max – – 20 250 -4.5 – – 20.8 21.8 – dBm – – 125 ˚C/W Unit V V µA mA V mS dB *1:Channel to ambient Nov. ´97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET TYPICAL CHARACTERISTICS (Ta=25˚C) ID vs. VDS 200 VGS=-0.5V/step VGS=0V 100 0 2 0 4 6 10 8 DRAIN TO SOURCE VOLTAGE VDS(V) PO vs. Pin (f=8GHz) 30 PO vs. Pin (f=12GHz) Gain:10dB ID=100mA 25 30 8 6 4 2 Gain:10dB ID=100mA 25 20 8 6 4 2 PO 20 PO 15 15 10 10 5 5 VDS=6V VDS=4V 0 -5 0 5 10 INPUT POWER 15 20 Pin(dBm) VDS=6V VDS=4V 0 25 -5 0 5 10 INPUT POWER 15 20 25 Pin(dBm) Nov. ´97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET S11 ,S22 vs. f. S21 ,S12 vs. f. +90˚ +j50 +j25 +j100 S21 12.0GHz 0.5GHz +j10 +j250 S12 0.5GHz 12.0GHz 25 0 50 100 250 ±180˚ 6 5 3 2 1 0 0˚ I S 21 I 0.5GHz 12.0GHz 4 12.0GHz S22 -j10 -j250 0.1 0.5GHz S11 -j25 -j100 -j50 Ta=25˚C VDS=6V ID=100mA 0.2 -90˚ S PARAMETERS (Ta=25˚C,VDS=6V,ID=100mA) Freq. (GHz) Magn. 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 0.899 0.874 0.848 0.822 0.796 0.771 0.745 0.719 0.713 0.706 0.700 0.694 0.691 0.689 0.686 0.683 0.677 0.670 0.664 0.657 0.645 0.632 0.620 0.608 S11 Angle(deg.) -56.8 -69.4 -82.1 -94.7 -107.4 -120.0 -132.7 -145.3 -153.3 -161.3 -169.3 -177.3 176.9 171.1 165.2 159.4 153.1 146.9 140.6 134.3 127.8 121.3 114.8 108.3 Magn. 6.115 5.682 5.248 4.815 4.382 3.949 3.515 3.082 2.863 2.645 2.426 2.207 2.090 1.973 1.856 1.739 1.671 1.602 1.534 1.466 1.413 1.360 1.308 1.255 S21 Angle(deg.) 140.3 130.4 120.5 110.6 100.6 90.8 80.9 71.0 63.3 55.6 47.9 40.2 33.9 27.5 21.2 14.8 8.5 2.1 -4.3 -10.6 -17.0 -23.4 -29.7 -36.1 Magn. 0.047 0.049 0.050 0.052 0.054 0.056 0.057 0.059 0.060 0.062 0.063 0.064 0.068 0.073 0.077 0.081 0.089 0.096 0.104 0.111 0.118 0.126 0.133 0.140 S12 Angle(deg.) 52.1 49.3 46.4 43.6 40.8 38.0 35.1 32.3 33.3 34.3 35.2 36.2 37.6 39.0 40.4 41.8 40.5 39.3 38.0 36.7 33.2 29.8 26.3 22.8 Magn. 0.471 0.462 0.452 0.442 0.432 0.422 0.413 0.403 0.412 0.421 0.431 0.440 0.458 0.476 0.494 0.512 0.530 0.549 0.567 0.585 0.601 0.618 0.635 0.651 S22 Angle(deg.) -25.2 -32.7 -40.1 -47.5 -54.9 -62.4 -69.8 -77.2 -84.2 -91.1 -98.1 -105.0 -110.3 -115.5 -120.8 -126.0 -130.8 -135.5 -140.3 -145.0 -149.4 -153.9 -158.3 -162.7 K MSG/MAG (dB) 0.371 0.394 0.431 0.485 0.558 0.657 0.789 0.964 1.006 1.064 1.142 1.245 1.202 1.172 1.153 1.146 1.072 1.011 0.962 0.922 0.893 0.867 0.844 0.823 21.2 20.7 20.2 19.7 19.1 18.5 17.9 17.2 16.3 14.8 13.6 12.4 12.1 11.8 11.5 11.0 11.1 11.6 11.7 11.2 10.8 10.4 9.9 9.5 Nov. ´97 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1601B MICROWAVE POWER GaAs FET MITSUBISHI ELECTRIC