MJD122 NPN Silicon Darlington Transistor Features • • • • • • Equivalent Circuit D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications Electrically Similar to Popular TIP122 Complement to MJD127 C B D-PAK 1 1.Base 2.Collector 3.Emitter R1 R2 R1 ≅ 8kΩ R2 ≅ 0.12kΩ Absolute Maximum Ratings E TA=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 8 A ICP Collector Current (Pulse) IB Base Current PC TJ TSTG Storage Temperature 16 A 120 mA Collector Dissipation (TC=25°C) 20 W Collector Dissipation (TA=25°C) 1.75 W Junction Temperature 150 °C - 65 to 150 °C Electrical Characteristics Symbol VCEO(sus) TA=25°C unless otherwise noted Parameter Test Condition Min. Max. *Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 ICEO Collector Cut-off Current VCE = 50V, IB =0 10 μA ICBO Collector Cut-off Current VCB = 100V, IE = 0 10 μA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA hFE *DC Current Gain VCE = 4V, IC = 4A VCE = 4V, VEB = 8A VCE(sat) *Collector-Emitter Saturation Voltage IC = 4A, IB = 16mA IC = 8A, IB = 80mA 2 4 V V VBE(sat) *Base-Emitter Saturation Voltage IC = 8A, IB = 80mA 4.5 V VBE(on) *Base-Emitter On Voltage VCE = 4V, IC = 4A 2.8 V Output Capacitance VCB = 10V, IE = 0 f= 0.1MHz 200 pF Cob 100 Units 1000 100 V 12K * Pulse Test: PW≤300μs, Duty Cycle≤2% © 2009 Fairchild Semiconductor Corporation MJD122 Rev. B0 www.fairchildsemi.com 1 MJD122 — NPN Silicon Darlington Transistor December 2009 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10k hFE, DC CURRENT GAIN VCE = 4V 1k 100 0.1 1 10 10 IC = 250 IB VBE(sat) 1 VCE(sat) 0.1 0.01 0.1 Figure 1. DC current Gain 100 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 10 tR,tD[μs], TURN ON TIME Cob[pF], CAPACITANCE 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT 100 10 1 0.1 1 1 10 VCC= 30V IC=250IB IB1=IB2 1 tR tD, VBE(off)=0 0.1 0.01 0.1 100 1 10 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector Output Capacitance Figure 4. Turn On Time 100 10 IC[A], COLLECTOR CURRENT tSTG,tF[μs], TURN OFF TIME VCC=30V IC=250IB tSTG 1 tF 1m 5m s DC s 1 0.1 0.01 0.1 0.1 1 1 10 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 5. Turn Off Time Figure 6. Safe Operating Area © 2009 Fairchild Semiconductor Corporation MJD122 Rev. B0 10 0μ s 50 0μ s 10 www.fairchildsemi.com 2 MJD122 — NPN Silicon Darlington Transistor Typical Performance Characteristics MJD122 — NPN Silicon Darlington Transistor Typical Performance Characteristics (Continued) PC[W], POWER DISSIPATION 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 1. Power Derating © 2009 Fairchild Semiconductor Corporation MJD122 Rev. B0 www.fairchildsemi.com 3 MJD122 — NPN Silicon Darlington Transistor Mechanical Dimensions D-PAK 2.30 ±0.10 MIN0.55 0.91 ±0.10 9.50 ±0.30 0.50 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (2XR0.25) (1.00) (0.90) (3.05) 2.70 ±0.20 6.10 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.70) 2.30 ±0.20 (0.10) 2.30TYP [2.30±0.20] (0.50) 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 6.10 ±0.20 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 0.76 ±0.10 Dimensions in Millimeters © 2009 Fairchild Semiconductor Corporation MJD122 Rev. B0 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower¥ Auto-SPM¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™* ™* ® Fairchild® ® Fairchild Semiconductor FACT Quiet Series™ FACT® ® FAST FastvCore¥ FETBench¥ FlashWriter®* FPS¥ F-PFS¥ FRFET® SM Global Power Resource Green FPS¥ Green FPS¥ e-Series¥ Gmax™ GTO¥ IntelliMAX¥ ISOPLANAR¥ MegaBuck™ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® ® OPTOPLANAR ® PDP SPM™ Power-SPM¥ PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START¥ SPM® STEALTH™ SuperFET¥ SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS™ SyncFET™ Sync-Lock™ ® * The Power Franchise® TinyBoost¥ TinyBuck¥ TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TriFault Detect¥ TRUECURRENT¥* PSerDes¥ ® UHC Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com