UTC-IC MJE13005L-TA3-T

UNISONIC TECHNOLOGIES CO., LTD
MJE13005
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTORS
1
DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220 V SWITCHMODE.
FEATURES
TO-220
1
* VCEO(SUS)= 400 V
* Reverse bias SOA with inductive loads @ TC = 100℃
* Inductive switching matrix 2 to 4 Amp, 25 and 100℃
. . . tc @ 3A, 100℃ is 180 ns (Typ)
* 700V blocking capability
* SOA and switching applications information
TO-220F
*Pb-free plating product number: MJE13005L
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/Relay drivers
* Deflection circuits
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MJE13005-TA3-T
MJE13005L-TA3-T
MJE13005-TF3-T
MJE13005L-TF3-T
MJE13005L-TA3-T
Package
TO-220
TO-220F
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tube
Tube
(1)Packing Type
(1)T: Tube
(2)Package Type
(2) TA3: TO-220, TF3: TO-220F
(3)Lead Plating
(3) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
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MJE13005
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Emitter Current
Continuous
Peak (1)
Continuous
Peak (1)
SYMBOL
VCEO(SUS)
VCBO
VEBO
Ic
ICM
IB
IBM
RATINGS
400
700
9
4
8
2
4
UNIT
V
V
V
A
A
A
A
Continuous
IE
6
A
12
A
Peak (1)
IEM
Total Power Dissipation at Ta=25℃
2
W
PD
Derate above 25℃
16
mW/℃
75
W
Total Power Dissipation at TC=25℃
PD
Derate above 25℃
600
mW/℃
Operating and Storage Junction Temperature Range
TJ , TSTG
-65 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
(1) Pulse Test : Pulse Width=5ms,Duty Cycle≤10%
SYMBOL
θJA
θJC
MAX
62.5
1.67
UNIT
℃/W
℃/W
ELECTRICAL CHARACTERISTICS (Tc=25℃, unless otherwise specified)
PARAMETER
*OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
SECOND BREAKDOWN
Second Breakdown Collector Current
with bass forward biased
Clamped Inductive SOA with Base
Reverse Biased
*ON CHARACTERISTICS (1)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
SYMBOL
TEST CONDITIONS
VCEO(SUS) Ic=10mA , IB=0
VCBO=Rated Value, VBE(OFF)=1.5 V
ICBO
VCBO=Rated Value, VBE(OFF)=1.5V,
Tc=100℃
IEBO
VEB=9V, Ic=0
TYP
MAX
400
UNIT
V
1
mA
5
1
mA
Is/b
See Figure 11
RBSOA
See Figure 12
VCE(SAT)
Ic=1A, VCE=5V
Ic=2A, VCE=5V
Ic=1A, IB=0.2A
Ic=2A, IB=0.5A
Ic=4A, IB=1A
VBE (SAT)
Ic=2A, IB=0.5A, Ta=100℃
Ic=1A, IB=0.2A
Ic=2A, IB=0.5A
1
1.2
1.6
V
V
V
Ic=2A, IB=0.5A, Tc=100℃
1.5
V
hFE1
hFE2
fT
Cob
Ic=500mA, VCE=10V, f=1MHz
VCB=10V, IE=0, f=0.1MHz
UNISONIC TECHNOLOGIES CO., LTD
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MIN
10
8
60
40
0.5
0.6
1
4
65
V
V
V
MHz
pF
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ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
tD
Rise Time
tR
Vcc=125V, Ic=2A, IB1=IB2=0.4A,
tP=25µs, Duty Cycle≤1%
Storage Time
tS
Fall Time
tF
* Pulse Test: Pulse Width=300µs, Duty Cycle≤2%
MIN
TYP
MAX
UNIT
0.025
0.3
1.7
0.4
0.1
0.7
4
0.9
µs
µs
µs
µs
Table 1.Test Conditions for Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
+5V
TEST CIRCUITS
Vcc
33
1N4933
MJE210
L
0.001μF
MR826*
+125V
33 1N4933
5V
Pw
DUTY CYCLE≦10%
tr, tf≦10ns
68
1k
2N2222
1N4933
Vclamp
Ic
RB
1k
+5V
0.02μF
NOTE
PW and Vcc Adjusted for Desired Ic
RB Adjusted for Desired IB1
CIRCUIT
VALUES
RESISTIVE
SWITHCING
IB
1k
5.1k
T.U.T.
Rc
TUT
RB
*SELECTED FOR≧1kV
VCE
SCOPE
D1
51
-4.0V
2N2905
270
MJE200
47
100
1/2W
Coil Data :
FERROXCUBE core #6656
Full Bobbin ( ~ 16 Turns) #16
-VBE(off)
GAP for 200μH/20 A
Lcoil=200μH
Vcc=20V
Vclamp=300V
Vcc=125V
Rc=62Ω
D1=1n5820 or
Equiv.
RB=22Ω
TEST WAVEFORMS
OUTPUT WAVEFORMS
tf CLAMPED
Ic
tf UNCLAMPED>t2
Ic(pk)
t
t1
tf
t1=
VCE
VCE or
Vclamp
TIME
t2
t
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+10 V
t1 Adjusted to
Obtain Ic
t2=
Lcoil (Icpk)
Vcc
Lcoil (Icpk)
Vclamp
25μS
0
Test Equipment
Scope-Tektronics
475 or Equivalent
-8V
tr, tf<10ns
Duty Cycly=1.0%
RB and Rc adjusted
for desired IB and Ic
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NPN SILICON TRANSISTOR
RESISTIVE SWITCHING PERFORMANCE
Figure 1. Turn-On Time
Figure 2. Turn-Off Time
1
10
Vcc=125V
Ic/IB=5
TJ=25°С
0.5
2
0.2
Time, t (°С)
Time, t (°С)
tR
Vcc=125V
Ic/IB=5
TJ=25°С
tS
5
0.1
0.05
tD @ VBE(OFF)=5V
1
0.5
tF
0. 3
0.2
0.02
0.01
0.04
0. 2
0.1
0.4
2
1
0.1
0. 04
4
0. 1
Collector Current, IC (A)
0.2
0.5
2
1
4
Collector Current, IC (A)
Transient Thermal Resistance, r(t)
(Normalized)
Figure 3. Typical Thermal Response [ ZθJC(t)]
1
0.7
0.5
D=0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07
0.05
0.02
0.03
0.01
SINGLE PULSE
0.02
0.01
0.01
0.02
0.05
0.1
P (PK)
ZθJC(t )=r(t ) Rθ JC
Rθ J C=1.67℃/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
Tj(pk) -TC =P(pk ) Zθ JC(t)
0.2
1
0.5
2
5
10
20
t1
t2
DUTY CYCLE, D=t1/t2
10
0
50
Time, t (ms)
Figure 4. Forward Bias Safe Operating Area
20
0
1k
Figure 5. Reverse Bias Switching Safe Operating Area
10
4
Vclamp
Tc≧100℃
IB1 =2.0A
5
2
dc
1
500μs
5
ms
Collector Current, IC(pk) (A)
Collector Current, IC (A)
50
0
0. 5
1ms
0.2
0.1
0. 05
3
2
VBE(off)=9V
1
UTC MJE13005
5V
3V
0.02
UTC MJE13005
1.5V
0.01
5
7
10
20
30
50
70 100
200
500
300
0
0
100
200
300
400
500
600
700
800
400
Collector-Emitter Voltage, VCE (V)
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Collector-Emitter Clamp Voltage, VCE (V)
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NPN SILICON TRANSISTOR
RESISTIVE SWITCHING PERFORMANCE
Figure 6. Forward Bias Power Derating
1
SECOND BREAKDOWN
DERATING
Power Derating Factor
0.8
0.6
THERMAL
DERATING
0. 4
0.2
0
20
40
60
80
100
120
140
160
Case Temperature, TC (℃)
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NPN SILICON TRANSISTOR
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable
operation; e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 4 is based on TC = 25℃; TJ(pk) is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated when TC≥25℃. Second breakdown limitations do not
derate the same as thermal limitations. Allowable current at the voltages shown on Figure 4 may be found at any
case temperature by using the appropriate curve on Figure 6.
TJ(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe
level at or below a specific value of collector current. This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe
Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified
under clamped conditions so that the device is never subjected to an avalanche mode. Figure 5 gives the complete
RBSOA characteristics.
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Figure 7. DC Current Gain
Figure 8. Collector Saturation Region
100
2
DC Current Gain, hFE
50
Collector-Emitter Voltage, VCE (V)
TJ=150℃
70
25℃
30
20
-55℃
1
0
VCE=2V
- - - - - -VCE=5V
7
5
0.04 0.06
0.1
0.2
0.4
0.6
1
2
TJ=25℃
1.6
2A
Ic=1A
0.4
0
4
0.03
0.05
0.1
Base-Emitter Voltage, VBE (V)
VBE(SAT ) @ IC/IB=4
- - - - - -V BE(ON) @ VCE=2V
TJ=-55℃
25℃
0. 7
25℃
0. 5
150℃
0.3
0.1
0. 2
0.4
0.6
0.5 0.7
1
2
3
Figure 10. Collector-Emitter Saturation Voltage
1
2
4
Collector-Emitter Saturation Voltage, VCE(SAT)
(V)
Figure 9. Base-Emitter Voltage
0.04 0.06
0.2 0.3
Base Current, IB (A)
1.3
0. 9
4A
0.8
Collector Current, IC (A)
1.1
3A
1.2
0.55
Ic/IB=4
0.45
TJ=-55℃
0.35
25℃
0. 25
0.15
150℃
0.05
0.04 0.06
0.1
Collector Current, IC (A)
0.2
0.4
0.6
1
2
4
Collector Current, IC (A)
Figure 11. Collector Cutoff Region
Figure 12. Capacitance
10k
2k
VCE=250V
Cib
Tj=150℃
100
125℃
10
100
℃
75℃
Capacitance, C (pF)
Collector Current, IC (μA)
1k
1k
50℃
700
500
300
200
100
70
1
50
25℃
Cob
30
REVERSE
0.1
-0.4
FORWARD
20
-0.2
0
+0.2
+0.4
+0. 6
Base-Emitter Voltage, VBE (V)
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0.3
0.5
1 3
5
10
30
50
100
300
Reverse Voltage, VR (V)
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NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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