Order this document by MKP3V110/D SEMICONDUCTOR TECHNICAL DATA . . . designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on-state. Conduction will continue like an SCR until the main terminal current drops below the holding current. The plastic axial lead package provides high pulse current capability at low cost. Glass passivation insures reliable operation. Applications are: • • • • • *Motorola preferred devices SIDACs 1 AMPERE RMS 100 thru 135 VOLTS High Pressure Sodium Vapor Lighting Strobes and Flashers Ignitors High Voltage Regulators Pulse Generators MT1 MT2 CASE 267-03 SURMETIC 50 PLASTIC AXIAL MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Repetitive Breakover Voltage Min Max V(BO) MKP3V110 MKP3V120 MKP3V130 Off-State Repetitive Voltage On-State RMS Current On-State Surge Current (Non-repetitive) (60 Hz One Cycle Sine Wave, Peak Value) Operating Junction Temperature Range Storage Temperature Range Lead Solder Temperature (Lead Length ≥ 1/16″ from Case, 10 s Max) Unit Volts 100 110 120 120 130 140 VDRM — ± 90 Volts IT(RMS) — 1 Amp ITSM — 20 Amps TJ –40 +125 °C Tstg –40 +150 °C — — +230 °C Symbol Min Max Unit RθJL — 15 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Lead (Lead Length = 3/8″) Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; both directions) Characteristic Symbol Min Typ Max Unit Breakover Current I(BO) — — 200 µA Repetitive Peak Off-State Current (60 Hz Sine Wave, VD = 90 V) IDRM — — 10 µA Forward “On” Voltage (ITM = 1 A Peak) VTM — 1.1 1.5 Volts Dynamic Holding Current IH — — 100 mA Switching Resistance RS 0.1 — — kΩ Maximum Rate of Change of On-State Current di/dt — 50 — A/µs 130 TA MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (°C) T C MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) CURRENT DERATING 120 α 110 α = Conduction Angle Tj Rated = 125°C 100 90 α = 180° 80 0 0.2 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 0.4 α 140 120 α = Conduction Angle Tj Rated = 125°C 100 80 α = 180° 60 40 20 0 2.0 0 125°C 0.6 0.4 0.3 0.2 0.1 0.8 0.9 1.0 1.1 1.2 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 3. Typical Forward Voltage 2 1.3 PAV , MAXIMUM AVERAGE POWER DISSIPATION (WATTS) I T , INSTANTANEOUS ON-STATE CURRENT (AMPS) 1.0 25°C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 2.0 Figure 2. Maximum Ambient Temperature Figure 1. Maximum Case Temperature 0.8 0.2 1.25 α = 180° 1.0 α 0.75 α = Conduction Angle Tj Rated = 125°C 0.50 0.25 0 0 0.4 0.6 0.8 0.2 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 1.0 Figure 4. Power Dissipation Motorola Thyristor Device Data THERMAL CHARACTERISTICS r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 LEAD LENGTH = 1/4″ ZθJL(t) = RθJL • r(t) ∆TJL = Ppk RθJL[r(t)] 0.5 0.3 tp where: TIME ∆TJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t from this figure. For example, r(tp) = normalized value of transient resistance at time tp. 0.2 0.1 0.05 The temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: 0.03 0.02 TJ = TL + ∆TJL 0.01 0.2 0.5 1.0 2.0 5.0 10 20 50 100 t, TIME (ms) 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k Figure 5. Thermal Response 100 250 90 225 I H , HOLDING CURRENT (mA) I(BO) , BREAKOVER CURRENT ( µA) TYPICAL CHARACTERISTICS 80 70 60 50 40 30 20 10 0 –60 200 175 150 125 100 75 50 25 –40 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 0 –60 140 –40 –20 Figure 6. Breakover Current 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 140 Figure 7. Holding Current ITM VTM Slope = RS IH IS IDRM VS I(BO) VDRM RS +( V (BO) V(BO) * VS ) ( IS * I(BO) ) Figure 8. V-1 Characteristics Motorola Thyristor Device Data 3 PACKAGE DIMENSIONS B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D 1 K STYLE 1: PIN 1. CATHODE 2. ANODE DIM A B D K INCHES MIN MAX 0.370 0.380 0.190 0.210 0.048 0.052 1.000 ––– MILLIMETERS MIN MAX 9.40 9.65 4.83 5.33 1.22 1.32 25.40 ––– A K 2 CASE 267–03 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *MKP3V110/D* MKP3V110/D