MMBTSB1197 PNP Silicon Epitaxial Planar Transistor Low frequency transistor The transistor is subdivided into two groups Q and R according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 32 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 800 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C Characteristics at Ta =25 OC Parameter DC Current Gain at -VCE = 3 V, -IC = 100 mA Collector Cutoff Current at -VCB = 20 V Emitter Cutoff Current at -VEB = 4 V Collector Base Breakdown Voltage at -IC = 50 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 50 µA Collector Saturation Voltage at -IC = 500 mA, -IB = 50 mA Output Capacitance at -VCB = 10 V, IE = 0 A, f = 1 MHz Transition Frequency at -VCE = 5 V, IE = 50 mA, f = 100 MHz Q R Symbol Min. Max. Unit hFE hFE 120 180 270 390 - -ICBO - 0.5 µA -IEBO - 0.5 µA -V(BR)CBO 40 - V -V(BR)CEO 32 - V -V(BR)EBO 5 - V -VCE(sat) - 0.5 V Cob - 30 pF fT 50 - MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 21/12/2005 MMBTSB1197 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 21/12/2005