MMBTSC2411 NPN Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups P, Q and R according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current IC 500 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C Characteristics at Ta =25 OC Parameter DC Current Gain at VCE = 3 V, IC = 100 mA Collector Base Breakdown Voltage at IC= 100 µA Collector Emitter Breakdown Voltage at IC= 1 mA Emitter Base Breakdown Voltage at IE= 100 µA Collector Cutoff Current at VCB= 20 V Emitter Cutoff Current at VEB = 4 V Collector Saturation Voltage at IC = 500 mA, IB = 50 mA Transition frequency at VCE = 5 V, -IE = 20 mA, f = 100 MHz Output Capacitance at VCB = 10 V, IE = 0 A, f = 1 MHz P Q R Symbol Min. Typ. Max. Unit hFE hFE hFE 82 120 180 - 180 270 390 - V(BR)CBO 40 - - V V(BR)CEO 32 - - V V(BR)EBO 5 - - V ICBO - - 1 µA IEBO - - 1 µA VCE(sat) - - 0.4 V fT - 250 - MHz Cob - 6 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 21/12/2005 MMBTSC2411 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 21/12/2005