MMUN2111LT1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit PD 246 (Note 1.) 400 (Note 2.) 1.5 (Note 1.) 2.0 (Note 2.) mW Collector Current http://onsemi.com PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) 3 1 2 SOT–23 CASE 318 STYLE 6 MARKING DIAGRAM A6x M THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient RθJA °C/W 508 (Note 1.) 311 (Note 2.) °C/W A6x = Device Marking x = A – L (See Page 2) M = Date Code DEVICE MARKING INFORMATION Thermal Resistance – Junction-to-Lead RθJL 174 (Note 1.) 208 (Note 2.) °C/W Junction and Storage Temperature Range TJ, Tstg –55 to +150 °C See specific marking information in the device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad Semiconductor Components Industries, LLC, 2001 November, 2001 – Rev. 2 1 Publication Order Number: MMUN2111LT1/D MMUN2111LT1 Series DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) Shipping MMUN2111LT1 MMUN2111LT3 SOT–23 A6A 10 10 3000/Tape & Reel 10,000/Tape & Reel MMUN2112LT1 MMUN2112LT3 SOT–23 A6B 22 22 3000/Tape & Reel 10,000/Tape & Reel MMUN2113LT1 MMUN2113LT3 SOT–23 A6C 47 47 3000/Tape & Reel 10,000/Tape & Reel MMUN2114LT1 MMUN2114LT3 SOT–23 A6D 10 47 3000/Tape & Reel 10,000/Tape & Reel MMUN2115LT1 (Note 3.) MMUN2115LT3 SOT–23 A6E 10 ∞ 3000/Tape & Reel 10,000/Tape & Reel MMUN2116LT1 (Note 3.) MMUN2116LT3 SOT–23 A6F 4.7 ∞ 3000/Tape & Reel 10,000/Tape & Reel MMUN2130LT1 (Note 3.) MMUN2130LT3 SOT–23 A6G 1.0 1.0 3000/Tape & Reel 10,000/Tape & Reel MMUN2131LT1 (Note 3.) MMUN2131LT3 SOT–23 A6H 2.2 2.2 3000/Tape & Reel 10,000/Tape & Reel MMUN2132LT1 (Note 3.) MMUN2132LT3 SOT–23 A6J 4.7 4.7 3000/Tape & Reel 10,000/Tape & Reel MMUN2133LT1 (Note 3.) MMUN2133LT3 SOT–23 A6K 4.7 47 3000/Tape & Reel 10,000/Tape & Reel MMUN2134LT1 (Note 3.) MMUN2134LT3 SOT–23 A6L 22 47 3000/Tape & Reel 10,000/Tape & Reel ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO – – 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO – – 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO – – – – – – – – – – – – – – – – – – – – – – 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 mAdc Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 – – Vdc Collector-Emitter Breakdown Voltage (Note 4.) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 – – Vdc OFF CHARACTERISTICS MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 3. New devices. Updated curves to follow in subsequent data sheets. 4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% http://onsemi.com 2 MMUN2111LT1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 60 100 140 140 250 250 5.0 15 27 140 130 – – – – – – – – – – – VCE(sat) – – 0.25 – – – – – – – – – – – – – – – – – – – – – – 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 VOH 4.9 – – Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 kΩ R1/R2 0.8 0.17 – 0.8 0.055 1.0 0.21 – 1.0 0.1 1.2 0.25 – 1.2 0.185 ON CHARACTERISTICS (Note 5.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2130LT1/MMUN2131LT1 (IC = 10 mA, IB = 1 mA) MMUN2115LT1/MMUN2116LT1/ MMUN2132LT1/MMUN2133LT1/MMUN2134LT1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) Input Resistor VOL MMUN2111LT1 MMUN2112LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 MMUN2113LT1 Vdc Vdc MMUN2115LT1 MMUN2116LT1 MMUN2131LT1 MMUN2132LT1 MMUN2130LT1 MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 Resistor Ratio MMUN2111LT1/MMUN2112LT1/MMUN2113LT1 MMUN2114LT1 MMUN2115LT1/MMUN2116LT1 MMUN2130LT1/MMUN2131LT1/MMUN2132LT1 MMUN2133LT1 5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% http://onsemi.com 3 MMUN2111LT1 Series PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 RθJA = 625°C/W 50 0 -50 0 50 100 150 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2111LT1 1 IC/IB=10 TA=-25°C 75°C 0.1 0.01 20 0 TA, AMBIENT TEMPERATURE (°C) Cob , CAPACITANCE (pF) h FE, DC CURRENT GAIN (NORMALIZED) TA=75°C 25°C -25°C 100 10 IC, COLLECTOR CURRENT (mA) 3 2 1 0 100 f = 1 MHz lE = 0 V TA = 25°C 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 3. DC Current Gain 100 25°C VO = 0.2 V TA=-25°C 10 1 0.1 0.01 0.001 VO = 5 V 0 1 2 50 Figure 4. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) IC , COLLECTOR CURRENT (mA) 75°C 80 4 VCE = 10 V 100 60 Figure 2. VCE(sat) versus IC 1000 1 40 IC, COLLECTOR CURRENT (mA) Figure 1. Derating Curve 10 25°C 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 25°C 75°C 1 0.1 10 Figure 5. Output Current versus Input Voltage TA=-25°C 10 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 4 50 MMUN2111LT1 Series 1000 10 IC/IB=10 h FE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2112LT1 TA=-25°C 25°C 1 75°C 0.1 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA=75°C 100 10 80 1 10 Figure 8. DC Current Gain 100 IC , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 2 1 0 75°C 25°C TA=-25°C 10 1 0.1 VO = 5 V 0.01 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 1 2 3 4 VO = 0.2 V TA=-25°C 25°C 10 75°C 1 0 10 6 7 8 9 Figure 10. Output Current versus Input Voltage 100 0.1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 0 100 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC 3 25°C -25°C 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 5 10 MMUN2111LT1 Series 1 1000 IC/IB=10 TA=-25°C 25°C 75°C 0.1 0.01 h FE , CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2113LT1 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C -25°C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 100 0.6 0.4 0.2 0 0 TA=75°C -25°C 1 0.1 0.01 VO = 5 V 0 1 2 3 4 VO = 2 V TA=-25°C 25°C 75°C 10 1 10 6 7 8 9 10 Figure 15. Output Current versus Input Voltage 100 0 5 Vin, INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance 0.1 25°C 10 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) I C , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 6 MMUN2111LT1 Series 1 180 IC/IB=10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2114LT1 TA=-25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75°C VCE = 10 V 160 25°C 140 -25°C 120 100 80 60 40 20 0 80 1 2 4 6 Figure 17. VCE(sat) versus IC TA=75°C f = 1 MHz lE = 0 V TA = 25°C 3.5 3 IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) 90 100 100 4 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 25°C -25°C 10 VO = 5 V 1 50 Figure 19. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 20. Output Current versus Input Voltage +12 V 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 80 Figure 18. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) TA=-25°C 25°C 75°C Typical Application for PNP BRTs 1 LOAD 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source http://onsemi.com 7 MMUN2111LT1 Series INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT–23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. http://onsemi.com 8 MMUN2111LT1 Series SOLDER STENCIL GUIDELINES The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177–189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 7 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. STEP 1 PREHEAT ZONE 1 RAMP" 200°C 150°C STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES 205° TO 219°C PEAK AT SOLDER JOINT 170°C 160°C 150°C 140°C 100°C 100°C 50°C STEP 6 STEP 7 VENT COOLING SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 23. Typical Solder Heating Profile http://onsemi.com 9 MMUN2111LT1 Series PACKAGE DIMENSIONS SOT–23 TO–236AB CASE 318–08 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 1 V B S 2 G C D H J K DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR http://onsemi.com 10 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 MMUN2111LT1 Series Notes http://onsemi.com 11 MMUN2111LT1 Series Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800–282–9855 Toll Free USA/Canada http://onsemi.com 12 MMUN2111LT1/D