MPS2907A Series General Purpose Transistors PNP Silicon http://onsemi.com Features • These are Pb−Free Devices* COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS 1 EMITTER TO−92 CASE 29 STYLE 1 3 STRAIGHT LEAD BULK PACK Line 2 MPS2907AG MPS 2907A MPS2907ARLG MPS2 907A MPS2907ARLRAG MPS 2907 MPS2907ARLRPG MPS 2907 3 BENT LEAD TAPE & REEL AMMO PACK MPSx x907x YWW G G DEVICE MARKING Line 1 2 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Device 1 12 Y WW G = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 June, 2010 − Rev. 5 1 Publication Order Number: MPS2907A/D MPS2907A Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector −Emitter Breakdown Voltage (Note 1) (IC = −10 mAdc, IB = 0) V(BR)CEO −60 − Vdc Collector −Base Breakdown Voltage (IC = −10 mAdc, IE = 0) V(BR)CBO −60 − Vdc Emitter −Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 − Vdc Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) ICEX − −50 nAdc Collector Cutoff Current (VCB = −50 Vdc, IE = 0) (VCB = −50 Vdc, IE = 0, TA = 150°C) ICBO − − −0.01 −10 − −50 75 100 100 100 50 − − − 300 − − − −0.4 −1.6 − − −1.3 −2.6 fT 200 − MHz Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 8.0 pF Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo − 30 pF ton − 45 ns td − 10 ns tr − 40 ns toff − 100 ns ts − 80 ns tf − 30 ns Characteristic OFF CHARACTERISTICS Base Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) IB mAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = −0.1 mAdc, VCE = −10 Vdc) (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −150 mAdc, VCE = −10 Vdc) (Note 1) (IC = −500 mAdc, VCE = −10 Vdc) (Note 1) hFE Collector −Emitter Saturation Voltage (Note 1) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VCE(sat) Base −Emitter Saturation Voltage (Note 1) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Notes 1 and 2), (IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn−On Time Delay Time (VCC = −30 Vdc, IC = −150 mAdc, IB1 = −15 mAdc) (Figures 1 and 5) Rise Time Turn−Off Time Storage Time (VCC = −6.0 Vdc, IC = −150 mAdc, IB1 = IB2 = 15 mAdc) (Figure 2) Fall Time 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. http://onsemi.com 2 MPS2907A Series INPUT Zo = 50 W PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns INPUT Zo = 50 W PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns -30 V 200 1.0 k 0 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns -6.0 V 1.0 k 1.0 k 0 50 -16 V +15 V -30 V 50 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 1N916 200 ns 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit TYPICAL CHARACTERISTICS hFE , NORMALIZED CURRENT GAIN 3.0 VCE = -1.0 V VCE = -10 V 2.0 TJ = 125°C 25°C 1.0 -55°C 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain -1.0 -0.8 IC = -1.0 mA -10 mA -100 mA -500 mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 Figure 4. Collector Saturation Region http://onsemi.com 3 -3.0 -5.0 -7.0 -10 -20 -30 -50 MPS2907A Series ORDERING INFORMATION Package Shipping† MPS2907AG TO−92 (Pb−Free) 5000 Units / Bulk MPS2907ARLG TO−92 (Pb−Free) MPS2907ARLRAG TO−92 (Pb−Free) MPS2907ARLRPG TO−92 (Pb−Free) Device 2000 / Tape & Reel 2000 / Ammo Pack †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. t, TIME (ns) 300 200 VCC = -30 V IC/IB = 10 TJ = 25°C tr 100 70 50 30 20 td @ VBE(off) = 0 V 10 7.0 5.0 2.0 V 3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT -200 -300 -500 Figure 5. Turn−On Time 500 300 VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 200 t, TIME (ns) tf 100 70 50 30 t′s = ts - 1/8 tf 20 10 7.0 5.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 6. Turn−Off Time http://onsemi.com 4 MPS2907A Series TYPICAL SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C 10 10 8.0 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) f = 1.0 kHz IC = -1.0 mA, Rs = 430 W -500 mA, Rs = 560 W -50 mA, Rs = 2.7 kW -100 mA, Rs = 1.6 kW 6.0 4.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 6.0 IC = -50 mA -100 mA -500 mA -1.0 mA 4.0 2.0 0 100 50 100 200 f, FREQUENCY (kHz) 30 C, CAPACITANCE (pF) Ceb 10 7.0 Ccb 5.0 3.0 2.0 -0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 20 k 50 k 400 300 200 100 80 VCE = -20 V TJ = 25°C 60 40 30 20 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current−Gain — Bandwidth Product +0.5 -1.0 TJ = 25°C -0.6 0 VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ ° C) -0.8 V, VOLTAGE (VOLTS) 5.0 k 10 k Figure 8. Source Resistance Effects f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) Figure 7. Frequency Effects 20 500 1.0 k 2.0 k Rs, SOURCE RESISTANCE (OHMS) VBE(on) @ VCE = -10 V -0.4 -0.2 RqVC for VCE(sat) -0.5 -1.0 -1.5 RqVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -500 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. “On” Voltage Figure 12. Temperature Coefficients http://onsemi.com 5 MPS2907A Series PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X N 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --STYLE 1: PIN 1. EMITTER 2. BASE 3. 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