ONSEMI 2N4403RLRPG

2N4403
Preferred Device
General Purpose
Transistors
PNP Silicon
Features
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• Pb−Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
VCEO
40
Vdc
Collector − Base Voltage
VCBO
40
Vdc
Emitter − Base Voltage
VEBO
5.0
Vdc
Collector Current − Continuous
IC
600
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
−55 to +150
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
2
BASE
1
EMITTER
MARKING
DIAGRAM
1
2
2N
4403
YWW
3
TO−92
CASE 29
STYLE 1
Y
WW
= Year
= Work Week
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
RJA
200
°C/W
Thermal Resistance,
Junction−to−Case
RJC
83.3
°C/W
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future
use and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 1
1
Publication Order Number:
2N4403/D
2N4403
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
−
Vdc
Collector−Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
40
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
5.0
−
Vdc
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
IBEV
−
0.1
Adc
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
ICEX
−
0.1
Adc
30
60
100
100
20
−
−
−
300
−
−
−
0.4
0.75
0.75
−
0.95
1.3
fT
200
−
MHz
Collector−Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
−
8.5
pF
Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
−
30
pF
Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
1.5 k
15 k
ohms
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
0.1
8.0
X 10−4
Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
60
500
−
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
1.0
100
mhos
(VCC = 30 Vdc, VBE = + 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td
−
15
ns
tr
−
20
ns
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = 15 mA, IB2 = 15 mA)
ts
−
225
ns
tf
−
30
ns
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 2.0 Vdc) (Note 1)
(IC = 500 mAdc, VCE = 2.0 Vdc) (Note 1)
hFE
Collector−Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
Base−Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
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2
2N4403
ORDERING INFORMATION
Package
Shipping†
TO−92
5,000 Units / Box
2N4403G
TO−92
(Pb−Free)
5,000 Units / Box
2N4403RL
TO−92
2,000 / Tape & Reel
2N4403RLRA
TO−92
2,000 / Tape & Reel
TO−92
(Pb−Free)
2,000 / Tape & Reel
2N4403RLRM
TO−92
2,000 / Ammo Pack
2N4403RLRP
TO−92
2,000 / Ammo Pack
TO−92
(Pb−Free)
2,000 / Ammo Pack
TO−92
2,000 / Ammo Pack
Device
2N4403
2N4403RLRAG
2N4403RLRPG
2N4403ZL1
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
SWITCHING TIME EQUIVALENT TEST CIRCUIT
−30 V
−30 V
200 < 2 ns
+2 V
+14 V
0
0
1.0 k
−16 V
CS* < 10 pF
10 to 100 s,
DUTY CYCLE = 2%
200 < 20 ns
1.0 k
−16 V
CS* < 10 pF
1.0 to 100 s,
DUTY CYCLE = 2%
+4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
TRANSIENT CHARACTERISTICS
25°C
100°C
30
Ceb
10
7.0
Ccb
5.0
VCC = 30 V
IC/IB = 10
3.0
Q, CHARGE (nC)
CAPACITANCE (pF)
20
10
7.0
5.0
2.0
1.0
0.7
0.5
QT
0.3
QA
0.2
2.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
20
0.1
30
10
Figure 3. Capacitances
20
30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
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3
300
500
2N4403
100
100
IC/IB = 10
70
70
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
td @ VBE(off) = 0
30
20
t r , RISE TIME (ns)
t, TIME (ns)
50
30
20
10
10
7.0
7.0
5.0
VCC = 30 V
IC/IB = 10
50
10
20
30
50
70
100
200
300
5.0
500
10
20
30
50
70
100
200
300
500
500 1k 2k
5k 10k 20k
RS, SOURCE RESISTANCE (OHMS)
50k
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn−On Time
Figure 6. Rise Time
200
t s′, STORAGE TIME (ns)
IC/IB = 10
100
IC/IB = 20
70
50
IB1 = IB2
ts′ = ts − 1/8 tf
30
20
10
20
30
50
70
100
200
300
500
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = −10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
10
10
f = 1 kHz
8
6
4
2
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
8
IC = 1.0 mA, RS = 430 IC = 500 A, RS = 560 IC = 50 A, RS = 2.7 k
IC = 100 A, RS = 1.6 k
10
20
50
IC = 50 A
100 A
500 A
1.0 mA
4
2
RS = OPTIMUM SOURCE RESISTANCE
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
f, FREQUENCY (kHz)
6
0
100
50
Figure 8. Frequency Effects
100
200
Figure 9. Source Resistance Effects
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2N4403
h PARAMETERS
VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between
hfe and other “h” parameters for this series of transistors. To
obtain these curves, a high−gain and a low−gain unit were
selected from the 2N4403 lines, and the same units were
used to develop the correspondingly−numbered curves on
each graph.
100k
700
50k
hie , INPUT IMPEDANCE (OHMS)
1000
hfe , CURRENT GAIN
500
300
200
2N4403 UNIT 1
2N4403 UNIT 2
100
70
50
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
10k
5k
2k
1k
500
100
5.0 7.0 10
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
IC, COLLECTOR CURRENT (mAdc)
IC, COLLECTOR CURRENT (mAdc)
Figure 10. Current Gain
Figure 11. Input Impedance
20
5.0 7.0
10
500
10
2N4403 UNIT 1
2N4403 UNIT 2
5.0
2.0
1.0
0.5
0.2
0.1
20k
200
hoe , OUTPUT ADMITTANCE ( mhos)
h re , VOLTAGE FEEDBACK RATIO (X 10−4 )
30
2N4403 UNIT 1
2N4403 UNIT 2
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
100
50
20
10
2.0
1.0
0.1
5.0 7.0 10
2N4403 UNIT 1
2N4403 UNIT 2
5.0
10
0.2
0.3
0.5 0.7 1.0
2.0
3.0
IC, COLLECTOR CURRENT (mAdc)
IC, COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
Figure 13. Output Admittance
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5
5.0 7.0
2N4403
STATIC CHARACTERISTICS
h FE, NORMALIZED CURRENT GAIN
3.0
VCE = 1.0 V
VCE = 10 V
2.0
TJ = 125°C
25°C
1.0
−55 °C
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mA)
30
50
70
100
200
300
500
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 14. DC Current Gain
1.0
0.8
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0
7.0
10
20
30
50
Figure 15. Collector Saturation Region
0.5
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(sat) @ VCE = 10 V
0
COEFFICIENT (mV/ °C)
VOLTAGE (VOLTS)
1.0
0.4
0.2
VC for VCE(sat)
0.5
1.0
1.5
VS for VBE
2.0
VCE(sat) @ IC/IB = 10
0
0.1 0.2
0.5
50 100 200
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
2.5
0.1 0.2
500
0.5
1.0 2.0
5.0
10
20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 16. “On” Voltages
Figure 17. Temperature Coefficients
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500
2N4403
PACKAGE DIMENSIONS
TO−92
TO−226AA
CASE 29−11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X−X
1
N
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
2N4403
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
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2N4403/D