2N4403 Preferred Device General Purpose Transistors PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C −55 to +150 °C Operating and Storage Junction Temperature Range TJ, Tstg Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2 BASE 1 EMITTER MARKING DIAGRAM 1 2 2N 4403 YWW 3 TO−92 CASE 29 STYLE 1 Y WW = Year = Work Week THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RJA 200 °C/W Thermal Resistance, Junction−to−Case RJC 83.3 °C/W ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2004 June, 2004 − Rev. 1 1 Publication Order Number: 2N4403/D 2N4403 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 40 − Vdc Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 5.0 − Vdc Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV − 0.1 Adc Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX − 0.1 Adc 30 60 100 100 20 − − − 300 − − − 0.4 0.75 0.75 − 0.95 1.3 fT 200 − MHz Collector−Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Ccb − 8.5 pF Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb − 30 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.5 k 15 k ohms Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10−4 Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 60 500 − Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 100 mhos (VCC = 30 Vdc, VBE = + 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td − 15 ns tr − 20 ns (VCC = 30 Vdc, IC = 150 mAdc, IB1 = 15 mA, IB2 = 15 mA) ts − 225 ns tf − 30 ns OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc) (Note 1) (IC = 500 mAdc, VCE = 2.0 Vdc) (Note 1) hFE Collector−Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base−Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. http://onsemi.com 2 2N4403 ORDERING INFORMATION Package Shipping† TO−92 5,000 Units / Box 2N4403G TO−92 (Pb−Free) 5,000 Units / Box 2N4403RL TO−92 2,000 / Tape & Reel 2N4403RLRA TO−92 2,000 / Tape & Reel TO−92 (Pb−Free) 2,000 / Tape & Reel 2N4403RLRM TO−92 2,000 / Ammo Pack 2N4403RLRP TO−92 2,000 / Ammo Pack TO−92 (Pb−Free) 2,000 / Ammo Pack TO−92 2,000 / Ammo Pack Device 2N4403 2N4403RLRAG 2N4403RLRPG 2N4403ZL1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. SWITCHING TIME EQUIVALENT TEST CIRCUIT −30 V −30 V 200 < 2 ns +2 V +14 V 0 0 1.0 k −16 V CS* < 10 pF 10 to 100 s, DUTY CYCLE = 2% 200 < 20 ns 1.0 k −16 V CS* < 10 pF 1.0 to 100 s, DUTY CYCLE = 2% +4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn−On Time Figure 2. Turn−Off Time TRANSIENT CHARACTERISTICS 25°C 100°C 30 Ceb 10 7.0 Ccb 5.0 VCC = 30 V IC/IB = 10 3.0 Q, CHARGE (nC) CAPACITANCE (pF) 20 10 7.0 5.0 2.0 1.0 0.7 0.5 QT 0.3 QA 0.2 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 0.1 30 10 Figure 3. Capacitances 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 4. Charge Data http://onsemi.com 3 300 500 2N4403 100 100 IC/IB = 10 70 70 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 30 20 t r , RISE TIME (ns) t, TIME (ns) 50 30 20 10 10 7.0 7.0 5.0 VCC = 30 V IC/IB = 10 50 10 20 30 50 70 100 200 300 5.0 500 10 20 30 50 70 100 200 300 500 500 1k 2k 5k 10k 20k RS, SOURCE RESISTANCE (OHMS) 50k IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn−On Time Figure 6. Rise Time 200 t s′, STORAGE TIME (ns) IC/IB = 10 100 IC/IB = 20 70 50 IB1 = IB2 ts′ = ts − 1/8 tf 30 20 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VCE = −10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz 10 10 f = 1 kHz 8 6 4 2 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8 IC = 1.0 mA, RS = 430 IC = 500 A, RS = 560 IC = 50 A, RS = 2.7 k IC = 100 A, RS = 1.6 k 10 20 50 IC = 50 A 100 A 500 A 1.0 mA 4 2 RS = OPTIMUM SOURCE RESISTANCE 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 f, FREQUENCY (kHz) 6 0 100 50 Figure 8. Frequency Effects 100 200 Figure 9. Source Resistance Effects http://onsemi.com 4 2N4403 h PARAMETERS VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain these curves, a high−gain and a low−gain unit were selected from the 2N4403 lines, and the same units were used to develop the correspondingly−numbered curves on each graph. 100k 700 50k hie , INPUT IMPEDANCE (OHMS) 1000 hfe , CURRENT GAIN 500 300 200 2N4403 UNIT 1 2N4403 UNIT 2 100 70 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10k 5k 2k 1k 500 100 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 10. Current Gain Figure 11. Input Impedance 20 5.0 7.0 10 500 10 2N4403 UNIT 1 2N4403 UNIT 2 5.0 2.0 1.0 0.5 0.2 0.1 20k 200 hoe , OUTPUT ADMITTANCE ( mhos) h re , VOLTAGE FEEDBACK RATIO (X 10−4 ) 30 2N4403 UNIT 1 2N4403 UNIT 2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 100 50 20 10 2.0 1.0 0.1 5.0 7.0 10 2N4403 UNIT 1 2N4403 UNIT 2 5.0 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance http://onsemi.com 5 5.0 7.0 2N4403 STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125°C 25°C 1.0 −55 °C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 14. DC Current Gain 1.0 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 15. Collector Saturation Region 0.5 TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(sat) @ VCE = 10 V 0 COEFFICIENT (mV/ °C) VOLTAGE (VOLTS) 1.0 0.4 0.2 VC for VCE(sat) 0.5 1.0 1.5 VS for VBE 2.0 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 2.5 0.1 0.2 500 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 16. “On” Voltages Figure 17. Temperature Coefficients http://onsemi.com 6 500 2N4403 PACKAGE DIMENSIONS TO−92 TO−226AA CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X−X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 7 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− 2N4403 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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