ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Order this document by MRF186/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance @ 960 MHz, 28 Volts Output Power — 120 Watts PEP Power Gain — 11 dB Efficiency — 30% Intermodulation Distortion — –28 dBc • Excellent Thermal Stability • 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 28 Vdc, 960 MHz, 120 Watts CW 1.0 GHz, 120 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET ARCHIVED 2005 CASE 375B–04, STYLE 1 NI–860 MAXIMUM RATINGS (2) Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Drain–Gate Voltage (RGS = 1 MΩ) VDGR 65 Vdc Rating VGS ±20 Vdc Drain Current — Continuous ID 14 Adc Total Device Dissipation @ TC = 70°C Derate above 70°C PD 162.5 1.25 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Max Unit RθJC 0.8 °C/W Gate–Source Voltage THERMAL CHARACTERISTICS (2) Characteristic Thermal Resistance, Junction to Case NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF186 1 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 300 µAdc Per Side) VGS(th) 2.5 3 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 300 mAdc Per Side) VGS(Q) 3.3 4.2 5 Vdc Delta Gate Threshold Voltage (Side to Side) (VDS = 28 V, ID = 300 mA Per Side) ∆VGS(Q) — — 0.3 Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 3 Adc Per Side) VDS(on) — 0.58 0.7 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc Per Side) gfs 2.4 2.8 — S Input Capacitance (Per Side) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Ciss — 177 — pF Output Capacitance (Per Side) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Coss — 45 — pF Reverse Transfer Capacitance (Per Side) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss — 3.4 — pF OFF CHARACTERISTICS (1) Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 50 µAdc) ON CHARACTERISTICS (1) ARCHIVED 2005 DYNAMIC CHARACTERISTICS (1) FUNCTIONAL CHARACTERISTICS (In Motorola Test Fixture, 50 ohm system) (2) Two–Tone Common Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz, f2 = 960.1 MHz) Gps 11 12.2 — dB Two–Tone Drain Efficiency (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz, f2 = 960.1 MHz) η 30 35 — % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz, f2 = 960.1 MHz) IMD — –32 –28 dBc Input Return Loss (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz, f2 = 960.1 MHz) IRL 9 16 — dB Two–Tone Common Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps — 12 — dB Two–Tone Drain Efficiency (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) η — 33 — % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD — –32 — dBc Input Return Loss (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL — 16 — dB Output Mismatch Stress (VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2 x 400 mA, f = 960 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test (1) Each side of device measured separately. (2) Device measured in push–pull configuration. MRF186 2 MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MRF186 ARCHIVED 2005 B1 – B4 C1, C7, C8, C10, C16, C17 C2, C11, C34, C35 C3, C6, C12, C15 C4, C5, C13, C14, C19, C20, C32, C33 C9, C18 C21, C22 C23, C30 C24, C25, C26 C27, C28 Fair Rite Products Short Ferrit Bead, 2743021446 C31 10 µF, 50 V, Tantalum 0.1 µF, Chip Capacitor 330 pF, Chip Capacitor L1, L2 N1, N2 R1, R6 R2, R5 R3, R4 Z1 – Z22 Balun1, Balun2, Coax1, Coax2 2.20″ 50 Ω, 0.086″ OD Semi–Rigid Coax Board 1/32″ Glass Teflon, εr = 2.55 47 pF, Chip Capacitor 250 µF, 50 V, Electrolytic Capacitor 12 pF, Chip Capacitor 0.6 – 4.5 pF, Variable Capacitor, Johanson Gigatrim 5.1 pF, Chip Capacitor 3.9 pF, Chip Capacitor 0.8 – 8.0 pF, Variable Capacitor, Johanson Gigatrim 3 Turns, #20 AWG, IDIA 0.126″, 24.7 nH Type N Connectors 1 kΩ, 1/4 W, Carbon Resistor 1.2 kΩ, 0.1 W, Chip Resistor 75 Ω, 0.1 W, Chip Resistor Microstrip (See Component Placement) Figure 1. 930 – 960 MHz Test Circuit Schematic MOTOROLA RF DEVICE DATA MRF186 3 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 TYPICAL CHARACTERISTICS ' 1/ 1/21 ' 3 1/21 ' 3 1/21 ' ' "# $"%& # ' ' 7 4 8 ' 8 ' 8 ' ' ' ( .."#.$"%& η ..# # +.$;& 9: ."#..$/& ( 7 4 8 8 8 8 4 5 4 -,6 "# $"%& ( ( % 4 5 4 -,6 7 4 8 ( ( # # + 9: Figure 4. Power Gain versus Output Power ( )* "# $"%& ( Figure 5. Output Power versus Input Power .."#.$"%& )* 4 ( " 5 4 -,6 7 4 8 .."#.$"%& "# $"%& # Figure 3. Intermodulation Distortion versus Output Power ARCHIVED 2005 4 5 4 ( -,6 5 4 ( -,6 ' Figure 2. Intermodulation Distortion Products versus Output Power 8 ."#..$/& 9: 4 5 4 ( -,6 5 4 ( -,6 7 4 8 - .#-.%.$/0& - .#-.%.$/0& ' " " %+ # $%& Figure 6. Output Power versus Supply Voltage MRF186 4 + # # %," )* 4 ( " 5 4 -,6 7 4 8 ( ( ( ( ( % #'% # # $%& Figure 7. Output Power versus Gate Voltage MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 TYPICAL CHARACTERISTICS % 4 /0 ( ( + # # %," ):: . #.$9& % 4 /0 5 4 -,6 :: ( ( ( ( ( ( % #'% # # $%& ( 1:: Figure 8. Drain Current versus Gate Voltage ( 9: ."#..$/& 9: ."#..$/& ARCHIVED 2005 Figure 9. Capacitance versus Voltage % 4 4 " $#& 5 4 -,6 7 4 8 ' ' ' ' 9: ( < 4 ° 4 ° % '% # # $%& "# $"%& - Figure 10. DC Safe Operating Area MOTOROLA RF DEVICE DATA ' 5 #7# + $-,6& ' ' - .#-.%.$/0& .#.%%.$/& .. #.$& ( Figure 11. Broadband Circuit Performance MRF186 5 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 5 4 -,6 )* -,6 ARCHIVED 2005 -,6 = 5 4 -,6 4 7 4 f MHz Zin 4 Ω 8 4 " # Zin Ω ZOL* Ω 930 2.5 + j6.9 4.3 + j1.2 945 2.5 + j7.0 4.3 + j1.0 960 2.2 + j7.1 4.3 + j0.9 = Complex conjugate of source impedance. ZOL* = Conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current, efficiency and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation performance. Impedances shown represent a single channel (1/2 of MRF186) impedance measurement. Figure 12. Series Equivalent Input and Output Impedance MRF186 6 MOTOROLA RF DEVICE DATA Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 ARCHIVED 2005 MRF186 Figure 13. Component Placement Diagram of 930 – 960 MHz Broadband Test Fixture MOTOROLA RF DEVICE DATA MRF186 7 Archived 2005 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 PACKAGE DIMENSIONS 2X A A Q @@@ - - - #%> ( ## -#%% # #% # %-# +(-'( ( -#%> ,( ( -#% , % -#%# ( $(& "+ - ?# +( ( # --## ## -#% ( $(& %# - % #"( 4 G B L 1 2 B (FLANGE) 5 3 4X K 4X 4 D @@@ - - - 000 - - - R 000 - - - N C (LID) E F (LID) H S (INSULATOR) @@@ - - M PIN 5 (INSULATOR) - - T - SEATING PLANE CASE 375B–04 ISSUE E NI–860 - INCHES MIN MAX ( ( ( ( ( ( ( ( ( ( ( ( (.% ( ( ( ( (.% ( ( ( ( ( ( ( ( ( ( (.# (.# %+# > ( ( ( ( ( MILLIMETERS MIN MAX ( ( ( ( ( ( ( ( ( ( ( ( (.% ( ( ( ( (.% ( ( ( ( ( ( ( ( ( ( (.# (.# # # % # ARCHIVED 2005 @@@ DIM A B C D E F G H K L M N Q R S bbb ccc Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF186 8 ◊ MOTOROLA RF DEVICE DATA MRF186/D Archived 2005