Order this document by MRF857/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 – 960 MHz. CLASS A 800 – 960 MHz 2.1 W (CW), 24 V NPN SILICON RF POWER TRANSISTOR Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.1 Watts CW Minimum Power Gain = 12.5 dB Minimum ITO = + 43 dBm Typical Noise Figure = 5.25 dB Characterized with Small–Signal S–Parameters and Series Equivalent Large–Signal Parameters from 800 – 960 MHz Silicon Nitride Passivated 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ 24 Vdc, IC = 0.3 Adc and Rated Output Power CASE 305D–01, STYLE 1 Will Withstand RF Input Overdrive of 0.4 W CW Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 30 Vdc Collector–Base Voltage V CBO 55 Vdc Emitter–Base Voltage VEBO 4 Vdc PD 17 0.114 Watts W/ C Total Device Dissipation @ TC = 50 C Derate above 50 C Operating Junction Temperature Storage Temperature Range TJ 200 C Tstg – 65 to +150 C Symbol Max Unit R JC 8.4 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance (TJ = 150 C, TC = 50 C) ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit V (BR)CEO 28 35 — Vdc Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0) V(BR)CES 55 85 — Vdc Collector–Base Breakdown Voltage (IC = 20 mA, IE = 0) V (BR)CBO 55 85 — Vdc Emitter–Base Breakdown Voltage (IE = 1 mA, IC = 0) V (BR)EBO 4 5 — Vdc ICES — — 1 OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0) Collector Cutoff Current (VCB = 24 V, IE = 0) mA (continued) REV 3 MOTOROLA RF DEVICE DATA Motorola, Inc. 1997 MRF857S 1 ELECTRICAL CHARACTERISTICS — continued Characteristic Symbol Min Typ Max Unit hFE 30 60 120 — Cob 2.4 3.3 4.4 pF Pg 12.5 13.5 — dB ON CHARACTERISTICS DC Current Gain (IC = 0.1 A, V CE = 5 V) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, f = 1 MHz) FUNCTIONAL CHARACTERISTICS Common–Emitter Power Gain (VCE = 24 V, IC = 0.3 A, f = 840 – 900 MHz, Power Output = 2.1 W) Load Mismatch (Po = 2.1 W) (VCE = 24 V, IC = 0.3 A, f = 840 MHz, Load VSWR = 30:1, All Phase Angles) No Degradation in Output Power P in(over) — — 0.4 W Third Order Intercept Point (VCE = 24 V, IC = 0.3 A) (f1 = 900 MHz, f2 = 900.1 MHz, Meas. @ IMD 3rd Order = – 40 dBc) ITO + 43 + 44.5 — dBm Noise Figure (VCE = 24 V, IC = 0.3 A, f = 900 MHz) NF — 5.25 — dB Input Return Loss (VCE = 24 V, IC = 0.3 A, f = 840 – 900 MHz, Power Output = 2.1 W) IRL — – 15 –10 dB RF Input Overdrive (VCE = 24 V, IC = 0.3 A, f = 840 MHz) No degradation Table 1. MRF857S Common Emitter S–Parameters S 11 VCE (V) IC (A) f (MHz) |S11| 24 0.3 800 820 840 860 880 900 920 940 960 0.915 0.915 0.915 0.913 0.914 0.914 0.913 0.915 0.916 S21 S12 |S21| 165 165 165 164 164 163 163 162 162 S 22 |S12| 2.098 2.049 1.991 1.951 1.912 1.865 1.832 1.783 1.748 54 53 52 51 50 49 48 47 46 |S22| 0.037 0.038 0.038 0.039 0.040 0.041 0.042 0.043 0.043 58 58 58 59 59 59 59 59 59 –157 –157 –157 –158 –158 –158 –158 –159 –159 0.343 0.345 0.349 0.352 0.355 0.359 0.362 0.366 0.369 Table 2. Zin and ZOL* versus Frequency f (MHz) 840 870 900 Zin (Ohms) 1.5 1.7 1.5 ZOL* (Ohms) 4.4 4.7 4.8 18.4 18.0 14.9 – 26.3 – 26.1 – 26.2 V CE = 24 V, IC = 0.3 A, P o = 2.1 W ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency. MRF857S 2 MOTOROLA RF DEVICE DATA VCE R8 R1 R2 F1 V_SUPPLY + C1 Q1 Q2 R9 R5 R4 R3 R10 B1 R7 + C2 B3 C4 B2 C3 B4 R6 C7 C5 + C8 C9 L1 TL6 C6 TL7 TL2 TL11 TL14 L2 DUT TL1 C12 C10 TL16 TL5 INPUT OUTPUT TL10 TL13 C11 TL3 TL9 TL12 TL8 TL15 TL4 B1, B4 B2, B3 C1 C2, C8 C3, C9 C4, C7 C5, C6 C10, C12 C11 F1 L1, L2 Q1 Q2 Long Ferrite Bead, Fair Rite (2743021447) Short Ferrite Bead, Fair Rite (2743019447) 250 F, 50 Vdc Electrolytic Capacitor 10 F, 50 Vdc Electrolytic Capacitor 0.1 F, Chip Capacitor 1000 pF, Chip Capacitor 100 pF, Chip Capacitor 43 pF, 100 Mil Chip Capacitor 0.8–8 pF, Johansen Gigatrim 1 A Micro–Fuse 5 Turns, 20 AWG, 0.126 ID, 46.2 nH MMBT2222ALT1, NPN Transistor BD136, PNP Transistor R1 R2 R3 R4 R5 R6 R7 R8 R9, R10 TL1 – TL16 V_Supply V CE Board 330 , 1/4 W 500 Potentiometer, 1/4 W 4.7K , 1/4 W 2 x 4.7K , 1/4 W 47 , 2 W 75 , 1/4 W 4.7 , 1/4 W 10 , 3 W 4 x 39 , 1/8 W Chip Resistors in Parallel Microstrip Transmission Line + 27 Vdc 0.5 V Due to Resistor Tolerance + 24 Vdc @ 0.3 A 0.030 Glass–Teflon 2 oz. Cu, r = 2.55 Figure 1. MRF857S Class A RF Test Fixture Schematic MOTOROLA RF DEVICE DATA MRF857S 3 TYPICAL CHARACTERISTICS 15 4 Gpe 14.5 3.5 14 3 VCC = 24 Vdc IC = 300 mA Pout = 2.1 W (CW) 13.5 2.5 13 2 12.5 1.5 VSWR 12 830 840 850 860 870 880 f, FREQUENCY (MHz) 890 1 910 900 Figure 2. Performance of MRF857S in Broadband Circuit 4 16 3.5 15 Pout Tj = 150 C Tf = 50 C 14 3 2.5 2 Gpe VCC = 24 Vdc IC = 300 mA f = 870 MHz 13 1000 12 1.5 11 1 10 0.5 0 1500 500 9 0 0.05 0.1 0.15 0.2 0.25 0.3 Pin, INPUT POWER (WATTS) 0.35 8 0.4 0 0 2 4 Figure 3. MRF857S Output Power & Power Gain versus Input Power 6 8 10 12 14 16 18 20 22 24 26 28 VCE (Vdc) Figure 4. MRF857S DC SOA 1.00E+08 850 Tj = 175 C Tf = 50 C 800 750 9.80E+06 1.00E+07 2.01E+06 1.00E+06 4.82E+05 700 1.32E+05 1.00E+05 4.03E+04 1.37E+04 5.05E+03 650 1.00E+04 600 2.02E+03 1.00E+03 550 8.67E+02 50 00 2 4 6 8 10 12 14 16 18 20 22 24 26 28 VCE (Vdc) Figure 5. MRF857S DC SOA (This device is MTBF limited for VCE 20 Vdc.) MRF857S 4 1.00E+02 100 120 140 160 180 200 220 TJ, JUNCTION TEMPERATURE ( C) 240 260 Figure 6. MRF857S MTBF Factor versus Junction Temperature MOTOROLA RF DEVICE DATA R3 R2 R1 Q1 R5 R7 C3 + C1 + R6 Q2 R4 B4 B1 C5 C4 C2 B2 L1 R8 R10 C7 R9 B3 C9 + C8 C6 C10 C12 L2 C11 MRF857S Figure 7. MRF857S Test Fixture Component Layout MOTOROLA RF DEVICE DATA MRF857S 5 M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. K 4 D 1 3 DIM A C D E F J K M 2 F J STYLE 1: PIN 1. 2. 3. 4. C E INCHES MIN MAX 0.200 0.220 0.095 0.130 0.055 0.065 0.040 0.050 0.025 0.035 0.003 0.007 0.235 0.265 45 NOM MILLIMETERS MIN MAX 5.08 5.59 2.41 3.30 1.40 1.65 1.02 1.27 0.64 0.89 0.08 0.18 5.97 6.73 45 NOM EMITTER BASE EMITTER COLLECTOR A CASE 305D–01 ISSUE O Motorola reserves the right to make changes without further notice to any products herein. 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Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax : [email protected] – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps MRF857S 6 MRF857/D MOTOROLA RF DEVICE DATA